Showing 1 - 11 results of 11 for search '"Silicon nanowire"', query time: 0.05s Refine Results
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    Step-necking growth of silicon nanowire channels for high performance field effect transistors by Lei Wu, Zhiyan Hu, Lei Liang, Ruijin Hu, Junzhuan Wang, Linwei Yu

    Published 2025-01-01
    “…In this work, we demonstrate that ultrathin and short silicon nanowires channels can be created through a local-curvature-modulated catalytic growth, where a planar silicon nanowires is directed to jump over a crossing step. …”
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    Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching by Chien-Wei Liu, Chin-Lung Cheng, Bau-Tong Dai, Chi-Han Yang, Jun-Yuan Wang

    Published 2012-01-01
    “…Experimental results reveal that the reflectance of the silicon nanowires (SNWs) declines as their length increases. …”
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    Sustained Condensation Efficiency on 3D Hybrid Surfaces by Ching‐Wen Lo, Yu‐Hsiang Chen, Ming‐Chang Lu

    Published 2025-02-01
    “…This study presents a three‐dimensional (3D) hybrid surface integrating short hydrophobic silicon nanowire arrays with hydrophilic microchannels. …”
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    Rapid and Quantitative Determination of S-Adenosyl-L-Methionine in the Fermentation Process by Surface-Enhanced Raman Scattering by Hairui Ren, Zhaoyang Chen, Xin Zhang, Yongmei Zhao, Zheng Wang, Zhenglong Wu, Haijun Xu

    Published 2016-01-01
    “…The Ag nanoparticle/silicon nanowire array substrate was fabricated and employed as an active SERS substrate to indirectly measure the SAM concentration. …”
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    Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor by Yuri D. Ivanov, Kristina A. Malsagova, Tatyana O. Pleshakova, Rafael A. Galiullin, Andrey F. Kozlov, Ivan D. Shumov, Irina A. Ivanova, Alexander I. Archakov, Vladimir P. Popov, Alexander V. Latyshev, Konstantin V. Rudenko, Alexander V. Glukhov

    Published 2018-01-01
    “…This method employs the sensors based on silicon nanowire field-effect transistors with protective layers of high-k dielectrics, whose surface is functionalized with an amino silane. …”
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    Preparation and photoelectric properties of Si:B nanowires with thermal evaporation method. by Yang Feng, Ping Liang, Ziwen Xia, Weiye Yang, Hongyan Peng, Shihua Zhao

    Published 2025-01-01
    “…It provides a simple and harmless new preparation method for the preparation of silicon nanowires. SiNWs (Silicon nanowires), as a novel type of nanomaterial, exhibit many outstanding properties, including the quantum confinement effect, quantum tunneling, Coulomb blocking effect, and exceptional electrical and optical properties. …”
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    Nonlinear Optical Signal Processing for Tbit/s Ethernet Applications by L. K. Oxenløwe, M. Galili, H. C. Hansen Mulvad, H. Hu, J. L. Areal, E. Palushani, H. Ji, A. T. Clausen, P. Jeppesen

    Published 2012-01-01
    “…We also present subsystems making serial optical Tbit/s systems compatible with standard Ethernet data for data centre applications and present Tbit/s results using, for instance silicon nanowires.…”
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    Dependence of Performance of Si Nanowire Solar Cells on Geometry of the Nanowires by Firoz Khan, Seong-Ho Baek, Jae Hyun Kim

    Published 2014-01-01
    “…The dependence of performance of silicon nanowires (SiNWs) solar cells on the growth condition of the SiNWs has been described. …”
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    Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching by G. Jia, J. Plentz, A. Gawlik, A. S. Azar, G. Stokkan, M. Syvertsen, P. A. Carvalho, J. Dellith, A. Dellith, G. Andrä, A. Ulyashin

    Published 2018-01-01
    “…It is established that (i) Si powder-based wafers with thicknesses ~180 μm can be fully (from the front to back side) or partly (subsurface region) remelted by a diode laser and grain sizes in laser-treated regions can be increased; (ii) a high-quality top layer can be fabricated by crystallization of an additional a-Si layer deposited by e-beam evaporation on top of the pc-Si; and (iii) silicon nanowires can be formed by metal-assisted wet chemical etching (MAWCE) of polished Si powder-based wafers and as-cut wafers irradiated with medium laser power, while a surface texturing on the as-cut pc-Si wafers occur, and no nanowires can form in the region subject to a liquid phase crystallization (LPC) caused by high-power laser treatments.…”
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