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Optimizing the Emitter Layer for Higher Efficiency Solar Cell Based SiGe Using AMPS1D
Published 2015-10-01Subjects: “…SiGe…”
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Terahertz Light-Field Imaging With Silicon Technologies
Published 2024-01-01Subjects: Get full text
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Thermoelectric Properties of Oblique SiGe Whiskers
Published 2016-06-01Subjects: “…SiGe…”
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Atomic‐scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy
Published 2024-05-01Subjects: Get full text
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SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS
Published 2015-04-01Subjects: “…si/ge nanostructures…”
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Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET
Published 2025-01-01Subjects: Get full text
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A Heterogeneously Integrated 256-Element 5G Phased Array: Design, Assembly, Test
Published 2025-01-01Subjects: Get full text
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Design and Analysis of an Ultra-Wideband High-Precision Active Phase Shifter in 0.18 μm SiGe BiCMOS Technology
Published 2025-05-01Subjects: “…SiGe BiCMOS…”
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Heavy Ions Induced Single-Event Transient in SiGe-on-SOI HBT by TCAD Simulation
Published 2025-04-01Subjects: “…SiGe heterojunction bipolar transistor…”
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Terahertz Integrated Circuits and Systems for High-Speed Wireless Communications: Challenges and Design Perspectives
Published 2021-01-01Subjects: Get full text
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A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process
Published 2024-08-01Subjects: Get full text
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Deformation-aware design of flexible strained-SiGe channel TFTs
Published 2025-06-01Subjects: Get full text
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SiGe-Surrounded Bitline Structure for Enhancing 3D NAND Flash Erase Speed
Published 2025-07-01Subjects: Get full text
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Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor
Published 2018-01-01Subjects: “…GeSn/SiGeSn…”
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Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM
Published 2025-04-01Subjects: Get full text
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Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed Applications
Published 2025-01-01Subjects: Get full text
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Interference-Resilient Communication With a 28 GHz Transceiver Utilizing OAM Waves
Published 2025-01-01Subjects: Get full text
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