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Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers
Published 2024-12-01Subjects: “…silicon carbide (SiC)…”
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42
Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics
Published 2025-01-01Subjects: Get full text
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Dynamic Voltage Balancing Across Series-Connected 10 kV SiC JBS Diodes in Medium Voltage 3L-NPC Power Converter Having Snubberless Series-Connected 10 kV SiC MOSFETs
Published 2024-01-01Subjects: “…10 kV silicon carbide (SiC) JBS diodes…”
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