ANALYSIS OF PHASE AND ELEMENT COMPOSITION OF RAW MATERIALS AND SEMICONDUCTORS OF THE CAST IRON AND STEEL PRODUCTION PROCESS USING ANALYTICAL SYSTEM ARL 9900 WORKSTATION by P. S. Chizhov

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Contactless defects detection using modulated photoluminescence technique: model for a single Shockley-Read-Hall trap in a semiconductor thin layer by Bérenguier Baptiste, Asseko Alban, Haddara Hiba, Le Gall Sylvain, Kleider Jean-Paul, Guillemoles Jean-François

“…Studying defects in semiconductors is, in practice, a very important topic for opto-electronic applications. …”
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Design of 3‐aminophenol‐grafted polymer‐modified zinc sulphide nanoparticles as drug delivery system by Milad Abniki, Zahra Azizi, Homayon Ahmad Panahi

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Virtual Frisch grid perovskite CsPbBr3 semiconductor with 2.2-centimeter thickness for high energy resolution gamma-ray spectrometer by Haoming Qin, Bao Xiao, Xuchang He, Xiao Ouyang, Tingting Gao, Yuquan Wang, Luyao Wang, Qihao Sun, Nannan Shen, Xiaoping Ouyang, Yihui He

“…Scaling up detector volume has presented great challenges, preventing perovskite semiconductors from reaching sufficient detection efficiency. …”
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Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation by Yadong Liu, Siyue Zhao, Lijuan You, Yong Xu, Renjun Si, Shunping Zhang

“…Insufficient selectivity is a major constraint to the further development of metal oxide semiconductor (MOS) sensors for chemical warfare agents, and this paper proposed an improved scheme combining catalytic layer/gas-sensitive layer laminated structure with temperature dynamic modulation for the Mustard gas (HD) MOS sensor. …”
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2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates by Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson, Md Abdullah-Al Mamun, Abdullah Al Mamun Mazumder, Shubhra S. Pasayat, Asif Khan, Chirag Gupta

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p‐Orbital Ferromagnetism Arising from Unconventional O− Ionic State in a New Semiconductor Sr2AlO4 with Insufficiently Bonded Oxygen by Xu‐Guang Zheng, Chao‐Nan Xu, Tomoki Uchiyama, Ichihiro Yamauchi, Tomasz Galica, Eiji Nishibori, Ying Chen

Subjects: “…magnetic semiconductor…”
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Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model by D. P. Samajdar, S. Dhar

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Reduced Representation Libraries from DNA Pools Analysed with Next Generation Semiconductor Based-Sequencing to Identify SNPs in Extreme and Divergent Pigs for Back Fat Thickness by Samuele Bovo, Francesca Bertolini, Giuseppina Schiavo, Gianluca Mazzoni, Stefania Dall’Olio, Luca Fontanesi

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A 22% Efficient Semiconductor/Liquid Junction Solar Cell—the Photoelectrochemical Behavior of n-WSe2 Electrodes in the Presence of I2/I- in Aqueous Electrolyte by G. Campet, C. Azaiez, F. Levy, H. Bourezc, J. Claverie

“…One of the most efficient semiconductor/liquid-junction photoelectrochemical cells (PEC) reported to date is presented. …”
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Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices by J. H. Yum, J. Oh, Todd. W. Hudnall, C. W. Bielawski, G. Bersuker, S. K. Banerjee

“…In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2 gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). …”
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Electrical Characteristics of Solution-Based Thin-Film Transistors with a Zinc-Tin Oxide/Carbon Nanotube Stacked Nanocomposite Active Layer by Yong-Jae Kim, Woon-Seop Choi

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Surface Recombination Via Interface Defects in Field Effect Transistors by E. Bendada, K. Raïs, P. Mialhe, J. P. Charles

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Spin‐coating fabrication of high‐yield and uniform organic thin‐film transistors via a primer template growth by Zhenxin Yang, Jiale Su, Junzhan Wang, Xuanhe Li, Fushun Li, Juntao Hu, Nan Chen, Zhang Tao, Delong Yang, Deng‐Ke Wang, Qiang Zhu, Yuhui Liao, Zheng‐Hong Lu

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A comprehensive review of yttrium aluminum nitride: crystal structure, growth techniques, properties, and applications by N. Afshar, M. Yassine, O. Ambacher

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Terahertz generation from surface of the bulk and monolayer tungsten diselenide by D. I. Khusyainov, A. V. Gorbatova, A. M. Buryakov

Subjects: “…two dimensional semiconductors…”
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Machine learning assisted prediction with data driven robust optimization: Machining process modeling of hard part turning of DC53 for tooling applications supporting semiconductor manufacturing by Mehdi Tlija, Muhammad Sana, Anamta Khan, Sana Hassan, Muhammad Umar Farooq

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Diagnoses of postpartum urinary retention using next-generation non-piezo ultrasound technology: assessing the accuracy and benefits by Ruben Plöger, Charlotte Behning, Adeline Walter, Ulrich Gembruch, Brigitte Strizek, Florian Recker

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Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method by Takanori Takahashi, Yukiharu Uraoka

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