Showing 881 - 896 results of 896 for search '"Semiconductors"', query time: 0.05s Refine Results
  1. 881

    Target Detection Using Fused Unidentical Photonics-Based LFM Sub-Band Radar Signals With an Adaptive Feed Forward Network Equalizer by Bikash Nakarmi, S. M. Rezwanul Islam, Hum Nath Parajuli, Ikechi Augustine Ukaegbu, Aigerim Ashimbayeva, Carlo Molardi, T. D. Subash, Xiangchuan Wang, Shilong Pan

    Published 2025-01-01
    “…We demonstrate this using optical injection in a semiconductor laser to generate Ph-LFM signals at different IEEE X-KA radar sub-bands: 19.25–23.94 GHz and 24.06–28.31 GHz (bandgap 0.12 GHz), 19.69–23.06 GHz and 23.625–27 GHz (bandgap 0.56 GHz), and 8–11.5 GHz and 12.75–17 GHz (bandgap 1.25 GHz). …”
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  2. 882

    Dye-based fluorescent organic nanoparticles made from polar and polarizable chromophores for bioimaging purposes: a bottom-up approach by Daniel, Jonathan, Dal Pra, Ophélie, Kurek, Eleonore, Grazon, Chloé, Blanchard-Desce, Mireille

    Published 2024-04-01
    “…Among them luminescent metal-, semiconductor- or oxide-based “hard” nanoparticles have been the most widely used. …”
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  3. 883

    Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate by Zizheng Li, Naresh Sharma, Bruno Lopez-Rodriguez, Roald van der Kolk, Thomas Scholte, Hugo Voncken, Jasper van der Boom, Simon Gröblacher, Iman Esmaeil Zadeh

    Published 2025-01-01
    “…Despite numerous demonstrations of high-performance LN photonics, processing lithium niobate remains challenging and suffers from incompatibilities with standard complementary metal–oxide–semiconductor (CMOS) fabrication lines, limiting its scalability. …”
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  4. 884

    Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates by Pieter Cardinael, Sachin Yadav, Bertrand Parvais, Jean-Pierre Raskin

    Published 2024-01-01
    “…With the help of a simplified TCAD model of the GaN-on-Si stack, we link this behavior to slow charge redistribution in the C-doped buffer continuously modifying the flat-band voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\text {FB}}$ </tex-math></inline-formula>) of the Metal-Insulator-Semiconductor (MIS) structure. Free carrier transport across the buffer is shown to have the greatest contribution on the large time constants, highlighting the importance of vertical transport paths in GaN-on-Si stacks.…”
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  5. 885
  6. 886

    Impedance mapping with high-density microelectrode array chips reveals dynamic heterogeneity of in vitro epithelial barriers by Alessandra Venz, Bastien Duckert, Liesbet Lagae, Saeedeh Ebrahimi Takalloo, Dries Braeken

    Published 2025-01-01
    “…Integrated with Complementary Metal Oxide Semiconductor (CMOS) technology for multiplexing and rapid impedance measurements, HD-MEAs can enable high spatiotemporal resolution assessments of epithelial tissues. …”
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  7. 887
  8. 888

    g-C<sub>3</sub>N<sub>4</sub> Modified with Metal Sulfides for Visible-Light-Driven Photocatalytic Degradation of Organic Pollutants by Shoaib Mukhtar, Erzsébet Szabó-Bárdos, Csilla Őze, Tatjána Juzsakova, Kornél Rácz, Miklós Németh, Ottó Horváth

    Published 2025-01-01
    “…Graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) proved to be a promising semiconductor for the photocatalytic degradation of various organic pollutants. …”
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  9. 889

    EV Hybrid Battery With Integrated Multilevel Neutral-Point-Clamped Interfacing and Lossless Intermodule State-of-Charge Balancing by Gabriel Garcia-Rojas, Sergio Busquets-Monge, Alber Filba-Martinez, Turev Sarikurt, Salvador Alepuz, Josep Bordonau

    Published 2025-01-01
    “…Overall, the proposed approach enables a modular and scalable design of the energy storage system for a wide range of electric vehicles, from only two different standard battery modules and a standard power semiconductor device, while optimizing the battery size for any given battery power and energy specification. …”
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  10. 890
  11. 891

    Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR &amp; communicati... by Gauri Deshpande, J. Ajayan, Sandip Bhattacharya, B. Mounika, Amit Krishna Dwivedi, D. Nirmal

    Published 2025-03-01
    “…An innovative GaN-channel MOSHEMT (Metal-oxide-semiconductor-high-electron-mobility-transistor) featuring AlGaN aback barrier and AlN barrier is reported. …”
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  12. 892
  13. 893
  14. 894

    A Single-Mode 852-nm Faraday Laser by Zhiyang Wang, Zijie Liu, Jianxiang Miao, Hangbo Shi, Xiaomin Qin, Xiaolei Guan, Jia Zhang, Pengyuan Chang, Tiantian Shi, Jingbiao Chen

    Published 2024-01-01
    “…Realizing always atomic translation frequency output, single-mode, high frequency stability, narrow linewidth semiconductor lasers, is one of the ultimate visions of areas related to quantums, such as quantum precision measurement and atomic physics. …”
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  15. 895
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