-
881
Target Detection Using Fused Unidentical Photonics-Based LFM Sub-Band Radar Signals With an Adaptive Feed Forward Network Equalizer
Published 2025-01-01“…We demonstrate this using optical injection in a semiconductor laser to generate Ph-LFM signals at different IEEE X-KA radar sub-bands: 19.25–23.94 GHz and 24.06–28.31 GHz (bandgap 0.12 GHz), 19.69–23.06 GHz and 23.625–27 GHz (bandgap 0.56 GHz), and 8–11.5 GHz and 12.75–17 GHz (bandgap 1.25 GHz). …”
Get full text
Article -
882
Dye-based fluorescent organic nanoparticles made from polar and polarizable chromophores for bioimaging purposes: a bottom-up approach
Published 2024-04-01“…Among them luminescent metal-, semiconductor- or oxide-based “hard” nanoparticles have been the most widely used. …”
Get full text
Article -
883
Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate
Published 2025-01-01“…Despite numerous demonstrations of high-performance LN photonics, processing lithium niobate remains challenging and suffers from incompatibilities with standard complementary metal–oxide–semiconductor (CMOS) fabrication lines, limiting its scalability. …”
Get full text
Article -
884
Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates
Published 2024-01-01“…With the help of a simplified TCAD model of the GaN-on-Si stack, we link this behavior to slow charge redistribution in the C-doped buffer continuously modifying the flat-band voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\text {FB}}$ </tex-math></inline-formula>) of the Metal-Insulator-Semiconductor (MIS) structure. Free carrier transport across the buffer is shown to have the greatest contribution on the large time constants, highlighting the importance of vertical transport paths in GaN-on-Si stacks.…”
Get full text
Article -
885
-
886
Impedance mapping with high-density microelectrode array chips reveals dynamic heterogeneity of in vitro epithelial barriers
Published 2025-01-01“…Integrated with Complementary Metal Oxide Semiconductor (CMOS) technology for multiplexing and rapid impedance measurements, HD-MEAs can enable high spatiotemporal resolution assessments of epithelial tissues. …”
Get full text
Article -
887
-
888
g-C<sub>3</sub>N<sub>4</sub> Modified with Metal Sulfides for Visible-Light-Driven Photocatalytic Degradation of Organic Pollutants
Published 2025-01-01“…Graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) proved to be a promising semiconductor for the photocatalytic degradation of various organic pollutants. …”
Get full text
Article -
889
EV Hybrid Battery With Integrated Multilevel Neutral-Point-Clamped Interfacing and Lossless Intermodule State-of-Charge Balancing
Published 2025-01-01“…Overall, the proposed approach enables a modular and scalable design of the energy storage system for a wide range of electric vehicles, from only two different standard battery modules and a standard power semiconductor device, while optimizing the battery size for any given battery power and energy specification. …”
Get full text
Article -
890
-
891
Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communicati...
Published 2025-03-01“…An innovative GaN-channel MOSHEMT (Metal-oxide-semiconductor-high-electron-mobility-transistor) featuring AlGaN aback barrier and AlN barrier is reported. …”
Get full text
Article -
892
-
893
-
894
A Single-Mode 852-nm Faraday Laser
Published 2024-01-01“…Realizing always atomic translation frequency output, single-mode, high frequency stability, narrow linewidth semiconductor lasers, is one of the ultimate visions of areas related to quantums, such as quantum precision measurement and atomic physics. …”
Get full text
Article -
895
-
896