Electrodeposited CdTe solar cells using low-purity Cd precursors & the effect of chemical purity by Ashfaque E. Alam, Hussain I. Salim, Ayotunde A. Ojo, Imyhamy M. Dharmadasa

“…Glass/fluorine-doped tin oxide (FTO) substrates have been used to electrodeposit the semiconductor layers. The as-deposited (AD) layers were heat-treated in the air with CdCl2. …”
Get full text

Fabrication of Cu: ZnO thin film sensor for ethanol vapor detection by Robin Simkhada, Dalton R. Gibbs, Soma Dhakal, Dipak Oli, Rishi Ram Ghimire, Deependra Das Mulmi, Leela Pradhan Joshi

“… For a long time, metal oxide semiconductor (MOS) based gas sensors have been widely used in domestic, commercial, and industrial sectors to detect harmful gases. …”
Get full text

Enhanced energy storage performance in Ag(Nb,Ta)O3 films via interface engineering by Xiao Zhai, Jun Ouyang, Weijie Kuai, Yinxiu Xue, Kun Wang, Nengneng Luo, Hongbo Cheng, Hanfei Zhu, Chao Liu, Limei Zheng

“…A Ag(Nb,Ta)O3/BaTiO3 bilayer film is proposed, where the BaTiO3 layer acts as a p-type semiconductor while Ag(Nb,Ta)O3 layer is n-type, together with the n-type LaNiO3 buffer layer on the substrate, forming an n-p-n heterostructure. …”
Get full text

Neuronal Multi Unit Activity Processing with Metal Oxide Memristive Devices by Caterina Sbandati, Xiongfei Jiang, Deepika Yadav, Spyros Stathopoulos, Dana Cohen, Alex Serb, Shiwei Wang, Themis Prodromakis

“…Furthermore, towards the integration of MIS with silicon chips, it is shown that it can reduce total system power consumption to below 1 µW, as RRAM encoding stage relaxes the signal preservation and noise requirements that challenge traditional complementary metal‐oxide‐semiconductor (CMOS) front‐ends. This eMUA‐MIS adaptation offers a viable pathway for developing more scalable and efficient BMIs for clinical use.…”
Get full text

A Comparative Analysis of Laser-Ablated Surface Characteristics Between the Si Face and C Face of Silicon Carbide Substrates by Hsin-Yi Tsai, Yu-Hsuan Lin, Kuo-Cheng Huang, J. Andrew Yeh, Yi Yang, Chien-Fang Ding

“…Silicon carbide (SiC) has significant potential as a third-generation semiconductor material due to its exceptional thermal and electronic properties, yet its high hardness and brittleness make processing costly and complex. …”
Get full text

Electronically Coupled Heterojunctions Based on Graphene and Cu2−xS Nanocrystals: The Effect of the Surface Ligand by Ju Y. Shang, Mariangela Giancaspro, Adriana Grandolfo, Rafique A. Lakho, Elisabetta Fanizza, Suraj K. Patel, Giuseppe Valerio Bianco, Marinella Striccoli, Chiara Ingrosso, Oscar Vazquez-Mena, M. Lucia Curri

“…While most research has concentrated on systems using heavy metal-based semiconductor NCs, there is a need for further exploration of environmentally friendly nanomaterials, such as Cu_2−xS. …”
Get full text

Low Thermal Resistance of Diamond‐AlGaN Interfaces Achieved Using Carbide Interlayers by Henry T. Aller, Thomas W. Pfeifer, Abdullah Mamun, Kenny Huynh, Marko Tadjer, Tatyana Feygelson, Karl Hobart, Travis Anderson, Bradford Pate, Alan Jacobs, James Spencer Lundh, Mark Goorsky, Asif Khan, Patrick Hopkins, Samuel Graham

“…This study provides a foundation for future research in improving thermal properties of semiconductor devices through interface engineering and advanced measurement methodologies.…”
Get full text

Photocatalytic Degradation of E.Coli Bacteria by Graphitic Carbon Nitride Photocatalysts under Visible Light Irradiation by Zahra Ahmadi Panah, Reyhaneh Dehghan, Mehran Bijari, Afsaneh Shahbazi

“…Graphitic carbon nitride, as a polymeric semiconductor, has attracted significant attention in this field. …”
Get full text

Polyoxovanadate-modified SnO2 electron transport layer for perovskite photodetectors by Ziting Liu, Yijia Hao, Jing Zhang, Yi He, Weilin Chen

“…Polyoxovanadates (POVs), as semiconductor-like molecules, exhibit good redox and excellent optical properties, which can regulate the energy band structure of SnO2. …”
Get full text

Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth by Ruishan Li, Mengyu Hong, Wei Shangguan, Yanzhe Zhang, Yihe Liu, He Jiang, Huihui Yu, Li Gao, Xiankun Zhang, Zheng Zhang, Yue Zhang

“…Two-dimensional (2D) MoTe2 shows great potential for future semiconductor devices, but the lab-to-fab transition is still in its preliminary stage due to the constraints in the crystal growth level. …”
Get full text

The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications by Qian Yu, Sheng Wu, Meng Zhang, Ling Yang, Xu Zou, Hao Lu, Chunzhou Shi, Wenze Gao, Mei Wu, Bin Hou, Gang Qiu, Xiaoning He, Xiaohua Ma, Yue Hao

Get full text

Plasmonically-enhanced reconfigurable photodetector based on graphene/Sb2S3 heterojunction by Xiaojuan Lian, Shiyu Li, Jiyuan Jiang, Wen Huang, Nan He, Xiaoyan Liu, Jie Wu, Zhou Wang, Gangyi Zhu, Lei Wang

Get full text

Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy by Arsenii A. Gavdush, Vladislav A. Zhelnov, Kirill B. Dolganov, Alexander A. Bogutskii, Sergey V. Garnov, Maria G. Burdanova, Dmitry S. Ponomarev, Qiwu Shi, Kirill I. Zaytsev, Gennadii A. Komandin

Get full text

An impermeable copper surface monolayer with high-temperature oxidation resistance by Su Jae Kim, Young-Hoon Kim, Bipin Lamichhane, Binod Regmi, Yousil Lee, Sang-Hyeok Yang, Seon Je Kim, Min-Hyoung Jung, Jae Hyuck Jang, Hu Young Jeong, Miaofang Chi, Maeng-Je Seong, Hak Soo Choi, Seong-Gon Kim, Young-Min Kim, Se-Young Jeong

Get full text

A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS by Rui Ma, Florian Protze, Frank Ellinger

“…Abstract This work investigates a 5.5–7.5‐GHz band‐configurable duty‐cycled wake‐up receiver (WuRX) fully implemented in a 45‐nm radio‐frequency (RF) silicon‐on‐insulator (SOI) complementary‐metal‐oxide‐semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super‐heterodyne receiver (RX) topology, the WuRX analogue front‐end (AFE) incorporates a 5.5–7.5‐GHz band‐tunable low‐power low‐noise amplifier, a low‐power Gilbert mixer, a digitally controlled oscillator (DCO), a 100‐MHz IF band‐pass filter (BPF), an envelope detector, a comparator, a pulse generator and a current reference. …”
Get full text

Unveiling the Electrocatalytic Performances of the Pd-MoS₂ Catalyst for Methanol-Mediated Overall Water Splitting by Aviraj M. Teli, Sagar M. Mane, Rajneesh Kumar Mishra, Wookhee Jeon, Jae Cheol Shin

Get full text

Preparation of Molecularly Imprinted Electrochemical Sensors and Analysis of the Doping of Epinephrine in Equine Blood by Zhao Wang, Yanqi Li, Xiaoxue Xi, Qichao Zou, Yuexing Zhang

Get full text

Alteration of Mastication Force via Intraoral Closed-Loop Electrical Stimulation by Junxiang Zheng, Bing Jiang, Saurabh Biswas, Su Young Lee, Erin Ealba Bumann, Teresa E. Lever, Jeonghee Kim, Hangue Park

Get full text

Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress by Shahid Makhdoom, Na Ren, Ce Wang, Yiding Wu, Hongyi Xu, Jiakun Wang, Kuang Sheng

Get full text

Accelerated TLPD bonding of reliable IMCs micro joints using Cu–8Ni substrate under thermal gradient: Experiments and theoretical calculations by Yanqing Lai, Mingjie Wang, Donghui Zheng, Meiping Liu, Bao Chen, Jinmei Lv, Ning Zhao

“…With the rapid development of the third-generation semiconductor power device towards high density, high performance, miniaturization and high temperature resistance, it is now urgent to develop a transient liquid phase diffusion (TLPD) bonding method with short bonding time and high reliability. …”
Get full text