Showing 821 - 840 results of 896 for search '"Semiconductors"', query time: 0.06s Refine Results
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    Fault diagnosis and fault-tolerant control strategy for interleaved boost DC/DC converter dedicated to PEM fuel cell applications. by Belkheir Abdesselam, Amar Benaissa, Ouahid Bouchhida, Samir Meradi, Mohamed Fouad Benkhoris

    Published 2025-01-01
    “…This design offers several advantages, including: Low ripple current, by splitting the load current between two phases, the ripple current at the input and output is significantly reduced compared to a single-phase converter. Reduced semiconductor stress, Each phase handles only a fraction (1/N) of the total current, which reduces stress on individual components and promotes higher reliability and operating margins. …”
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  9. 829

    Mobile robot navigation path algorithm in 3d industrial internet of thing (iot) environment based on 5g mobile communication by Pei Ping, Yu. N. Petrenko

    Published 2019-07-01
    “…With the significant growth of the semiconductor industry, creating small devices with powerful processing ability and network capabilities are no longer a dream for engineers. …”
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    Quantitative Modeling of High-Energy Electron Scattering in Thick Samples Using Monte Carlo Techniques by Bradyn Quintard, Xi Yang, Liguo Wang

    Published 2025-01-01
    “…These findings are crucial for advancing the study of thick biological and semiconductor samples using MeV-STEM.…”
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  13. 833

    Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics by Mohit Kumar, Laurent Xu, Timothée Labau, Jérôme Biscarrat, Simona Torrengo, Matthew Charles, Christophe Lecouvey, Aurélien Olivier, Joelle Zgheib, René Escoffier, Julien Buckley

    Published 2025-01-01
    “…Additionally, polarization-induced free charges at the metal–semiconductor interface reduced band bending, thereby enhancing carrier transport. …”
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    Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications by AbdulAziz AlMutairi, Aferdita Xhameni, Xuyun Guo, Irina Chircă, Valeria Nicolosi, Stephan Hofmann, Antonio Lombardo

    Published 2025-01-01
    “…Gallium (II) sulfide (β‐GaS), a hexagonal phase group III monochalcogenide, is a wide bandgap semiconductor with a bandgap exceeding 3 eV in single and few‐layer form. …”
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  16. 836

    64Cu-chelated InP/ZnSe/ZnS QDs as PET/fluorescence dual-modal probe for tumor imaging by Ziyu Zhao, Ayaka Otsuka, Noriko Nakamura, Toshifumi Tatsumi, Kazuhiro Nakatsui, Taiki Tsuzukiishi, Tomo Sakanoue, Kenji Shimazoe, Seiichi Ohta

    Published 2025-02-01
    “…Positron Emission Tomography (PET)/fluorescence dual-modal imaging combines deep penetration and high resolution, making it a promising approach for tumor diagnostics. Semiconductor nanocrystals, known as quantum dots (QDs), have garnered significant attention for fluorescence imaging owing to their tunable emission wavelength, high quantum yield, and excellent photostability. …”
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    Advances in Deep Brain Imaging with Quantum Dots: Structural, Functional, and Disease-Specific Roles by Tenesha Connor, Hemal Weerasinghe, Justin Lathia, Clemens Burda, Murat Yildirim

    Published 2024-12-01
    “…However, achieving greater depths remains limited by light scattering and absorption, compounded by the need for balanced laser power to avoid tissue damage. QDs, nanoscale semiconductor particles with unique optical properties, offer substantial advantages over traditional fluorophores, including high quantum yields, large absorption cross-sections, superior photostability, and tunable emission spectra. …”
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    High-speed FSO-5G wireless communication system with enhanced loss compensation using high-power EDFA by Stotaw Talbachew Hayle, Hua-Yi Hsu, Chia-Peng Wang, Hai-Han Lu, Jia-Ming Lu, Wei-Wen Hsu, Yu-Chen Chung, Yu-Yao Bai, Kelper Okram

    Published 2025-01-01
    “…Fibre Bragg grating sensors are employed as wavelength selectors for both downlink and uplink, offering a simpler, cost-effective solution compared to previously utilized reflective semiconductor optical amplifiers and multiple laser sources. …”
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    Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors by Soroush Ghandiparsi, Bikram Chatterjee, Jimmy‐Xuan Shen, Miranda S. Gottlieb, Clint D. Frye, Joseph D. Schneider, Ryan D. Muir, Brandon W. Buckley, Sara E. Harrison, Qinghui Shao, Joel B. Varley, Lars F. Voss

    Published 2025-01-01
    “…Aluminum nitride (AlN), an emerging ultra‐wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm−1K−1 at 298° K, compared to BSO's 3.29 Wm−1K−1). …”
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