Showing 781 - 800 results of 896 for search '"Semiconductors"', query time: 0.06s Refine Results
  1. 781

    A lightweight multi scale fusion network for IGBT ultrasonic tomography image segmentation by Meng Song, Zhaoba Wang, Youxing Chen, Ya Li, Yong Jin, Bei Jia

    Published 2025-01-01
    “…Abstract The Insulated Gate Bipolar Transistor (IGBT) is a crucial power semiconductor device, and the integrity of its internal structure directly influences both its electrical performance and long-term reliability. …”
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  2. 782

    Gate- and flux-tunable sin(2φ) Josephson element with planar-Ge junctions by Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, Elyjah Kiyooka, Jean-Michel Hartmann, Frédéric Gustavo, Jean-Luc Thomassin, Boris Brun, Vivien Schmitt, Simon Zihlmann, Romain Maurand, Étienne Dumur, Silvano De Franceschi, François Lefloch

    Published 2025-01-01
    “…Abstract Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with gate-tunable critical current. …”
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  3. 783

    Three-dimensional direct lithography of stable quantum dots in hybrid glass by Dezhi Zhu, Shangben Jiang, Ying Wang, Dejun Liu, Weijia Bao, Liwei Liu, Junle Qu, Yiping Wang, Changrui Liao

    Published 2025-01-01
    “…Semiconductor quantum dots (QDs), as high-performance materials, play an essential role in contemporary industry, mainly due to their high photoluminescent quantum yield, wide absorption characteristics, and size-dependent light emission. …”
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  4. 784

    Revised direct bandgap and band parameters for AlP: hybrid-functional first-principles calculations vs experiment by Cónal Murphy, Eoin P. O’Reilly, Christopher A. Broderick

    Published 2025-01-01
    “…Despite its relevance to the development of quantum-confined heterostructures for classical and quantum applications, there is significant uncertainty regarding several key band parameters for the indirect-gap III–V semiconductor AlP. Critically, using hybrid-functional first-principles calculations, we find that the Γ6c–Γ8v bandgap is ∼1 eV larger than the widely assumed value of 3.63 eV. …”
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  5. 785

    Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures by Dipanjan Sen, Harikrishnan Ravichandran, Mayukh Das, Pranavram Venkatram, Sooho Choo, Shivasheesh Varshney, Zhiyu Zhang, Yongwen Sun, Jay Shah, Shiva Subbulakshmi Radhakrishnan, Akash Saha, Sankalpa Hazra, Chen Chen, Joan M. Redwing, K. Andre Mkhoyan, Venkatraman Gopalan, Yang Yang, Bharat Jalan, Saptarshi Das

    Published 2024-12-01
    “…Notably, the low 180 °C thermal budget for fabricating the 3D-SrTiO3/2D-MoS2 device stack enables the integration of diverse materials into silicon complementary metal-oxide-semiconductor technology, addressing challenges in compute-in-memory and neuromorphic applications.…”
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  6. 786

    Boron-doped diamond MOSFETs operating at temperatures up to 400°C by Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide

    Published 2025-12-01
    “…The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C. …”
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  7. 787

    Enhanced solar hydrogen production via reconfigured semi-polar facet/cocatalyst heterointerfaces in GaN/Si photocathodes by Wei Chen, Danhao Wang, Weiyi Wang, Xin Liu, Yuying Liu, Chao Wang, Yang Kang, Shi Fang, Xudong Yang, Wengang Gu, Dongyang Luo, Yuanmin Luo, Zongtao Qu, Chengjie Zuo, Yi Kang, Lin Cheng, Wensheng Yan, Wei Hu, Ran Long, Jr-Hau He, Kang Liang, Sheng Liu, Yujie Xiong, Haiding Sun

    Published 2025-01-01
    “…Specifically, by tailoring the GaN nanowires via a simple alkaline-etching step to expose the inner (10 $$\bar{1}\bar{1}$$ 1 ¯ 1 ¯ ) facets, we achieve a highly coupled semiconductor nanowire-cocatalyst heterointerface with strong electron interaction. …”
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  8. 788

    Effects of Low-Intensity Laser Irradiation on Wound Healing in Diabetic Rats by Hui Ma, Ying-xin Li, Hong-li Chen, Mei-ling Kang, Timon Cheng-Yi Liu

    Published 2012-01-01
    “…The effects of low-intensity 630 nm semiconductor laser irradiation at 3.6 J/cm2 (LISL) on wound healing in diabetic rats were studied in this paper. …”
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  9. 789

    Inhibitory effects of cadmium and hydrophilic cadmium telluride quantum dots on the white rot fungus Phanerochaete velutina by Florian Part, Christian Zafiu, Eva-Kathrin Ehmoser, Mika A. Kähkönen

    Published 2025-01-01
    “…The fungus could therefore be used for bioremediation applications of dye- or QD-contaminated wastewater from the textile or semiconductor industries.…”
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  10. 790

    Dye-Sensitized Solar Cells Prepared with Mexican Pre-Hispanic Dyes by Mario Alberto Sánchez-García, Xim Bokhimi, Sergio Velázquez Martínez, Antonio Esteban Jiménez-González

    Published 2018-01-01
    “…In this study, both dyes are used to sensitize the mesoporous TiO2m semiconductor to prepare DSSCs.…”
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  11. 791

    A four‐stage yield optimization technique for analog integrated circuits using optimal computing budget allocation and evolutionary algorithms by Abbas Yaseri, Mohammad Hossein Maghami, Mehdi Radmehr

    Published 2022-09-01
    “…The yield value obtained from the simulation results for two‐stage class‐AB Operational Transconductance Amplifer (OTA) in 180 nm Complementary Metal‐Oxide‐Semiconductor (CMOS) technology is 99.85%. The proposed method has less computational effort and high accuracy than the MC‐based approaches. …”
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    Article
  12. 792

    Imaging performance of a CaWO4/CMOS sensor by Niki Martini, Vaia Koukou, George Fountos, Ioannis Valais, Ioannis Kandarakis, Christos Michail, Athanasios Bakas, Eleftherios Lavdas, Konstantinos Ninos, Georgia Oikonomou, Lida Gogou, George Panayiotakis

    Published 2019-09-01
    “…The aim of this study was to investigate the modulation transfer function (MTF) and the effective gain transfer function (eGTF) of a non-destruc­­tive testing (NDT)/industrial inspection complementary metal oxide semi­conductor (CMOS) sensor in conjunction with a thin calcium tungstate (CaWO4) screen. …”
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  13. 793
  14. 794
  15. 795

    Modern challenges facing electric vehicle adoption: a review of barriers to adoption, supply chain challenges, and equity by Hala Alshahapy, Joe F Bozeman III, Sanya Carley, Destenie Nock, Daniel Matisoff

    Published 2025-01-01
    “…Key disruptors include critical mineral scarcity, semiconductor shortages, and international trade and COVID-19-related restrictions, complicating efforts to overcome adoption hurdles. …”
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  16. 796

    MEASUREMENT OF CO AND NO2 GAS CONCENTRATION'S BY MULTISENSOR MICROSYSTEM IN THE MODE OF PULSE HEATING by O. G. Reutskaya, Y. M. Pleskachevsky

    Published 2017-06-01
    “…The most promising for mass use in gas analysis equipment are semiconductor gas sensors due to their high reliability, easy operation and relatively low cost. …”
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  17. 797

    Photocatalytic degradation of ciprofloxacin antibiotic from aqueous solution by BiFeO3 nanocomposites using response surface methodology by R. Mostafaloo, M. Asadi-Ghalhari, H. Izanloo, A. Zayadi

    Published 2020-04-01
    “…BiFeO<sub>3</sub>, a bismuth-based semiconductor photocatalyst that is responsive to visible light, has been recently used to remove organic pollutants from water. …”
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  18. 798

    Self-assembled biodegradable herbal-based nanoflower decorative magnesium implants combine therapy with bone regeneration by Huihui Du, Dongdong Zhang, Kui Xue, Limin Ma, Ru Xu, Ji Tan, Feng Peng, Xuanyong Liu

    Published 2025-01-01
    “…Moreover, Cur-Fe coating exhibits remarkable narrow gap semiconductor characteristics, which can generate reactive oxygen species (ROS) and demonstrated excellent antibacterial effect under simulated sunlight (SSL) irradiation. …”
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  19. 799

    GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH4)2SX + UV Interface Treatment Technology by Chao-Wei Lin, Hsien-Chin Chiu

    Published 2012-01-01
    “…This study examines the praseodymium-oxide- (Pr2O3-) passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH4)2SX + ultraviolet (UV) illumination. …”
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  20. 800

    Long-term stable laser injection locking for quasi-CW applications by Florian Kiesel, Kirill Karpov, Alexandre De Martino, Jonas Auch, Christian Gross

    Published 2025-01-01
    “…Commonly, injection locking of high-power semiconductor laser diodes are used for this purpose. …”
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