High-sensitivity, high-speed, broadband mid-infrared photodetector enabled by a van der Waals heterostructure with a vertical transport channel by Jianfeng Wu, Jialin Zhang, Ruiqi Jiang, Hao Wu, Shouheng Chen, Xinlei Zhang, Wenhui Wang, Yuanfang Yu, Qiang Fu, Rui Lin, Yueying Cui, Tao Zhou, Zhenliang Hu, Dongyang Wan, Xiaolong Chen, Weida Hu, Hongwei Liu, Junpeng Lu, Zhenhua Ni

“…Abstract The realization of room-temperature-operated, high-performance, miniaturized, low-power-consumption and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible mid-infrared photodetectors is highly desirable for next-generation optoelectronic applications, but has thus far remained an outstanding challenge using conventional materials. …”
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The prediction of X2B6 monolayers with ultrahigh carrier mobility by Xiuzhi Du, Zhaoming Huang

“…Interestingly, the K2B6 and Rb2B6 monolayers demonstrate a metallic band structure, while the Na2B6 monolayer is a semiconductor with an ultra-narrow bandgap only about 0.42 eV. …”
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Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells via Source/Drain Doping Engineering by Xuexiang Zhang, Qingkun Li, Lei Cao, Qingzhu Zhang, Renjie Jiang, Peng Wang, Jiaxin Yao, Huaxiang Yin

“…In this paper, special optimizations to source/drain (S/D) doping engineering including spacer bottom footing (SBF) and refining the lightly doped drain (LDD) implantation process are explored to enhance both fabricated complementary metal oxide semiconductor (CMOS) NSFETs and their 6T-SRAM cells. …”
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Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module by Wei Mu, Laili Wang, Haoyuan Jin, Borong Hu, Binyu Wang, Jinfeng Zhang, Liang Wang, Teng Long

“…Power semiconductor modules are mostly stressed when faced with large junction temperature variations, leading to failures such as bond wire lift-off and solder fatigue. …”
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An instruction dataset for extracting quantum cascade laser properties from scientific textDataverse by Deperias Kerre, Anne Laurent, Kenneth Maussang, Dickson Owuor

“…Quantum Cascade Lasers (QCL) are promising semiconductor lasers, compact and powerful, but of complex design. …”
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Insights on nitrogen/oxygen dual defects synergistic modulated charge transfer across the g-C3N4/TiO2-NTAs heterojunction enhanced photodegradation and gas-sensing performances by Zhufeng Shao, Lue Zhan, Yiman Zhang, Yonglong Zhang, Guoyang Yu, Yunfei Song, Xiaoming Xiu

“…The PEC activity of these nanohybrids is notably superior to that of their semiconductor counterparts, primarily due to the synergistic coupling of strong heterojunction interfaces and abundant surface defects. …”
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Lead Telluride Doped with Au as a Very Promising Material for Thermoelectric Applications by Pantelija M. Nikolic, Konstantinos M. Paraskevopoulos, Triantafyllia T. Zorba, Zorka Z. Vasiljevic, Eleni Pavlidou, Stevan S. Vujatovic, Vladimir Blagojevic, Obrad S. Aleksic, Aleksandar I. Bojicic, Maria V. Nikolic

“…Both methods confirmed that when PbTe was doped with 3.3 at% Au, thermoelectric and electrical properties of this doped semiconductor were both significantly improved, so Au as a dopant in PbTe could be used as a new high quality thermoelectric material.…”
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Atomistic behavior of Cu–Cu solid-state bonding in polycrystalline Cu with high-density boundaries by Hiroaki Tatsumi, C.R. Kao, Hiroshi Nishikawa

“…Low-temperature Cu–Cu solid-state bonding is key for interconnect miniaturization and higher current densities in advanced semiconductor devices. Achieving reliable joints requires effective void closure at the interface, driven by diffusion. …”
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Evaluation of Antimony Tri-Iodide Crystals for Radiation Detectors by Toshiyuki Onodera, Koei Baba, Keitaro Hitomi

“…SbI3 is a compound semiconductor with an AsI3-type crystal structure, high atomic number (Sb: 51, I: 53), high density (4.92 g/cm3), and a wide band-gap energy (2.2 eV). …”
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A Versatile Switched-Mode Large-Signal GaN-Based Low-Distortion Arbitrary Waveform Generator by Ignacio Alvarez-Gariburo, Hector Sarnago, Jose M. Burdio, Oscar Lucia

“…However, notable advancements in semiconductor technology have introduced a new era, enabling the creation of highly versatile waveform generators capable of superior performance, and extended operational capabilities. …”
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Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks by Xiaoying Tang, Zhiqiang Li, Lang Zeng, Hongwei Zhou, Xiaoxu Cheng, Zhenjie Yao

“…Engineers used TCAD tools for semiconductor devices modeling. However, it is computationally expensive and time-consuming for advanced devices with smaller dimensions. …”
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Studies on Characterization, Optical Absorption, and Photoluminescence of Yttrium Doped ZnS Nanoparticles by Ranganaik Viswanath, Halehatty Seethya Bhojya Naik, Yashavanth Kumar Gubbihally Somalanaik, Prashanth Kumar Parlesed Neelanjeneallu, Khandugadahalli Nagarajappa Harish, Mustur Channabasappa Prabhakara

“…The UV-visible spectra of ZnS and ZnS:Y nanoparticles showed a band gap energy value, 3.85 eV and 3.73 eV, which corresponds to a semiconductor material. A luminescence characteristics such as strong and stable visible-light emissions in the orange region alone with the blue emission peaks were observed for doped ZnS nanoparticles at room temperature. …”
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Hydrothermal Synthesis and Responsive Characteristics of Hierarchical Zinc Oxide Nanoflowers to Sulfur Dioxide by Qu Zhou, Bo Xie, Lingfeng Jin, Weigen Chen, Jian Li

“…The sensing performances of semiconductor gas sensors can be improved by morphology tailoring. …”
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A high speed processor for elliptic curve cryptography over NIST prime field by Xianghong Hu, Xueming Li, Xin Zheng, Yuan Liu, Xiaoming Xiong

“…On a 55 nm complementary metal oxide semiconductor application specific integrated circuit platform, the processor costs 463k gates and requires 0.028 ms for one SM. …”
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Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes by I. E. Paulauskas, G. E. Jellison, L. A. Boatner, G. M. Brown

“…Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with the significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. …”
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Dynamic Modeling of Stress-Induced Defect Expansion in VCSELs by Yuqi Zhang, Xun Li, Jia Zhao

“…Many failures of semiconductor-based oxide confined vertical cavity surface emitting lasers (VCSELs) are closely related to the generation and expansion of defects in the device structure. …”
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Spectral Steady-State Analysis of Inverters With Temperature-Dependent Losses Using Harmonic Balance by Pelle Weiler, Bas Vermulst, Erik Lemmen, Korneel Wijnands

“…Accurate calculation of semiconductor losses and temperature is the foundation of any design methodology for a power electronic converter. …”
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Time-resolved momentum microscopy with fs-XUV photons at high repetition rates with flexible energy and time resolution by Karl Jakob Schiller, Lasse Sternemann, Matija Stupar, Alan Omar, Martin Hoffmann, Jonah Elias Nitschke, Valentin Mischke, David Maximilian Janas, Stefano Ponzoni, Giovanni Zamborlini, Clara Jody Saraceno, Mirko Cinchetti

“…We show the capabilities of the system by tracing ultrafast electron dynamics in the conduction band valleys of a bulk crystal of the 2D semiconductor WS2. Using uncompressed driving laser pulses, we demonstrate an energy resolution better than (107 ± 2) meV, while compressed pulses lead to a time resolution better than (48.8 ± 17) fs.…”
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Electric-field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling by Dariusz Sztenkiel, Katarzyna Gas, Nevill Gonzalez Szwacki, Marek Foltyn, Cezary Śliwa, Tomasz Wojciechowski, Jarosław Z. Domagala, Detlef Hommel, Maciej Sawicki, Tomasz Dietl

“…Interestingly, our observations are similar to those reported for another dilute ferromagnetic semiconductor Cr x (Bi1−y Sb y )1−x Te3, in which magnetization was monitored as a function of the gate electric field. …”
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Progress in the Sputtering Preparation of Hf0.5Zr0.5O2 Ferroelectric Films and Memories by Kun Chen, Dan Zheng, Jie Gao, Hao Wang, Baoyuan Wang

“…Due to its compatibility with complementary metal oxide semiconductor, high coercivity voltage and the fact that ultrathin films remain ferroelectric, it is developed for applications in non‐volatile memories for data storage in different polarization states. …”
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