A Review of Integrated Photonic Devices Using Sb2Se3 by Xiaojun Chen, Jiao Lin, Ke Wang

“…Abstract The silicon photonic technology is a highly promising option for photonic integrated circuits and has attracted intensive interests, particularly since it can utilize complementary metal‐oxide‐semiconductor processing techniques and facilities, thereby realizing high‐density photonic integrations with low‐cost. …”
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Selection of Quantum Dot Wavelengths for Biomedical Assays and Imaging by Yong Taik Lim, Sungjee Kim, Akira Nakayama, Nathan E. Stott, Moungi G. Bawendi, John V. Frangioni

“…Fluorescent semiconductor nanocrystals (quantum dots [QDs]) are hypothesized to be excellent contrast agents for biomedical assays and imaging. …”
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VO2 based polarization-independent dual-wavelength plasmonic switches using U and C shaped nanostructures by Kirti Dalal, Yashna Sharma

“…The switching mechanism is based on the transformation of the phase change material, VO2, from its monoclinic semiconductor state to its tetragonal metal state when exposed to an external stimulus. …”
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Graphitic Carbon Nitride for Photocatalytic Hydrogen Production from Water Splitting: Nano-Morphological Control and Electronic Band Tailoring by Yongbo Fan, Xinye Chang, Weijia Wang, Huiqing Fan

“…Semiconductor polymeric graphitic carbon nitride (g-C₃N₄) photocatalysts have garnered significant and rapidly increasing interest in the realm of visible light-driven hydrogen evolution reactions. …”
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Synthesis, Characterization, and Low Temperature Sintering of Nanostructured BaWO4 for Optical and LTCC Applications by S. Vidya, Sam Solomon, J. K. Thomas

“…The basic optical properties and optical constants of the nano BaWO4 are studied using UV-visible absorption spectroscopy which showed that the material is a wide band gap semiconductor with band gap of 4.1 eV. The sample shows poor transmittance in ultraviolet region while maximum in visible-near infrared regions. …”
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Chemiluminescence of Mn-Doped ZnS Nanocrystals Induced by Direct Chemical Oxidation and Ionic Liquid-Sensitized Effect as an Efficient and Green Catalyst by Seyed Naser Azizi, Mohammad Javad Chaichi, Parmis Shakeri, Ahmadreza Bekhradnia, Mehdi Taghavi, Mousa Ghaemy

“…The CL properties of QDs not only will be helpful to study physical chemistry properties of semiconductor nanocrystals but also they are expected to find use in many fields such as luminescence devices, bioanalysis, and multicolor labeling probes.…”
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Reliable SRAM using NAND‐NOR Gate in beyond‐CMOS QCA technology by Marshal Raj, Lakshminarayanan Gopalakrishnan, Seok‐Bum Ko

“…Abstract The rise in complementary metal‐oxide semiconductor (CMOS) limitations has urged the industry to shift its focus towards beyond‐CMOS technologies to stay in race with Moore’s law. …”
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Engineering dual-driven pro-angiogenic nanozyme based on porous silicon for synergistic acceleration of burn infected wound healing by Wei Duan, Yue Gao, Ruru Xu, Sheng Huang, Xueqian Xia, Jingwen Zhao, Longhuan Zeng, Qiaolin Wei, Jia-Wei Shen, Jianmin Wu, Yongke Zheng

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Not Your Usual Analog Electronics Course—Generalized Analysis of Single-Transistor Amplifiers Uncovers Hidden Reciprocities and Equivalences by Brian Hong

“…Companion results for metal–oxide–semiconductor (MOS) single-transistor amplifiers are also included.…”
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Structural, electronic and magnetic properties of Fe2TiP full-Heusler compound: A first-principles study by Reza Sarhaddi

“…The minority spin band exhibited a semiconductor behavior (spin-flip gap of 0.21 eV; gap of 0.35 eV), whereas the majority spin band was metallic. …”
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Influence of Air Annealing and Gamma Ray Irradiation on the Optical Properties of Cl16FePc Thin Films by Raji Koshy, C. S. Menon

“…Hexadecacholoro phthalocyanines have attracted interest as possible n-type organic semiconductor with high electron mobility and good stability characteristics. …”
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An Architecture of 2-Dimensional 4-Dot 2-Electron QCA Full Adder and Subtractor with Energy Dissipation Study by Md. Abdullah-Al-Shafi, Ali Newaz Bahar

“…Quantum-dot cellular automata (QCA) is the beginning of novel technology and is capable of an appropriate substitute for orthodox semiconductor transistor technology in the nanoscale extent. …”
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On broadband, linear-phase, flat group delay, all-pole, low-pass filters for high-speed, data communication by Mihai Sanduleanu, Dan Cracan

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Nonreciprocal charge transport in polar Dirac metals with tunable spin-valley coupling by M. Kondo, M. Kimata, M. Ochi, T. Kaneko, K. Kuroki, K. Sudo, S. Sakaguchi, H. Murakawa, N. Hanasaki, H. Sakai

“…Nonreciprocal charge transport in solids, where resistance is different between rightward and leftward currents, is a key function of rectifying devices in modern electronics, as exemplified by p-n semiconductor junctions. Recently, this was also demonstrated in noncentrosymmetric materials in magnetic fields since their band structure exhibits spin polarization coupled to the position of momentum space due to antisymmetric spin-orbit coupling. …”
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Adaptive Sensing Private Property Protection Protocol Based on Cloud by Kai Fan, Wei Wang, Hui Li, Yintang Yang

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Efficiency increasing of a shipyard power supply system by Beley V. F., Korotkikh K. V.

“…Circuit and technological solutions (separation of nonlinear loads to a separate bus system; increasing the phase of semiconductor converters; connecting a nonlinear load to a system with greater short-circuit power) and filtering devices (narrow-band filters, filter-balancing devices and active filters) are used to increase the efficiency of the power supply system when it operates under conditions of increasing distorting loads.…”
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Nantenna for Standard 1550 nm Optical Communication Systems by Waleed Tariq Sethi, Hamsakutty Vettikalladi, Habib Fathallah, Mohamed Himdi

“…The detection of light frequency using nanooptical antennas may possibly become a good competitor to the semiconductor based photodetector because of the simplicity of integration, cost, and inherent capability to detect the phase and amplitude instead of power only. …”
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AgGaS₂ and Derivatives: Design, Synthesis, and Optical Properties by Guansheng Xing, Bing Chen

“…Silver gallium sulfide (AgGaS₂) is a ternary A^(I)B^(III)X^(VI)₂-type semiconductor featuring a direct bandgap and high chemical stability. …”
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Low-Power Differential Voltage-Controlled Ring Oscillator Based on Carbon Nanotube Field-Effect Transistor (CNTFET) by Saba Naseri Akbar

“…Based on the results obtained at the supply voltage of 0.9 V, the proposed voltage controlled ring oscillator (VCRO) based on carbon nanotube field effect transistor shows promising characteristics compared to its counterpart based on metal-oxide-semiconductor field effect transistor (MOSFET). Also, it performs exceptionally well compared to other existing oscillators.…”
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Electronic Structure and Optical Properties of GaAs Doped with Rare-Earth Elements (Sc, Y, La, Ce, and Pr) by Yongrong Deng, Chunhong Zhang, Xinmao Qin, Wanjun Yan

“…Band structure calculations indicated that the lowest conduction band and highest valence band were evident at the G-point, demonstrating that rare-earth-element doping did not alter the material type of GaAs, which remained a direct-bandgap semiconductor. The bandgap of Sc-doped GaAs increased, whereas those of Y-, La-, Ce-, and Pr-doped GaAs decreased. …”
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