Deadbeat Control of a Modified Single-Phase Five-Level Photovoltaic Inverter with Reduced Number of Switches by Mohsen Ghorbanali Afjeh, Mojtaba Babaei, Mohsen Alizadeh Bidgoli, Amir Ahmarinejad

“…In this article, a modified single-phase five-level photovoltaic inverter is proposed with a single DC voltage source and six semiconductor switches. Compared with the presented inverters, the introduced topology has the advantage of decreased device count and the first switching frequency for high blocking voltage switches. …”
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Effect of Multijunction Approach on Electrical Measurements of Silicon and Germanium Alloy Based Thin-Film Solar Cell Using AMPS-1D by Somenath Chatterjee, Sumeet Singh, Himangshu Pal

“…Multijunction solar cells designed from silicon (Si)-germanium (Ge) alloy based semiconductor materials exhibit high theoretical efficiencies (19.6%) compared to the single junction one. …”
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Enhancing Interpretability of Neural Compact Models: Toward Reliable Device Modeling by Chanwoo Park, Hyunbo Cho, Jungwoo Lee

“…Despite their efficiency in simulating electronic devices, a significant barrier to the widespread adoption of NCMs in the industry remains: the lack of interpretability. In the semiconductor sector, where inaccuracies or failures can lead to considerable financial consequences, it is critical to ensure that the model’s predictions are both understandable and reliable. …”
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All-silicon non-volatile optical memory based on photon avalanche-induced trapping by Yuan Yuan, Yiwei Peng, Stanley Cheung, Wayne V. Sorin, Sean Hooten, Zhihong Huang, Di Liang, Jiuyi Zhang, Marco Fiorentino, Raymond G. Beausoleil

“…Here, we demonstrate an non-volatile optical memory exclusively using the most common semiconductor material, silicon. By manipulating the photon avalanche effect, we introduce a trapping effect at the silicon-silicon oxide interface, which in turn demonstrates a non-volatile reprogrammable optical memory cell with a record-high 4-bit encoding, robust retention and endurance. …”
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Recent Advances of Colossal Magnetoresistance in Versatile La-Ca-Mn-O Material-Based Films by Navjyoti Boora, Rafiq Ahmad, Shafaque Rahman, Nguyen Quoc Dung, Akil Ahmad, Mohammed B. Alshammari, Byeong-Il Lee

“…Hole-doped manganese oxides exhibit a gigantic negative magnetoresistance, referred to as colossal magnetoresistance (CMR), owing to the interplay between double-exchange (DE) ferromagnetic metal and charge-ordered antiferromagnetic insulator/semiconductor phases. Magnetoresistive manganites display a sharp resistivity drop at the metal–insulator transition temperature (T^MI). …”
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Effective Atomic Number Determination of Rare Earth Oxides with Scattering Intensity Ratio by A. Turşucu, D. Demir, P. Önder

“…The scattered gamma photons were collected by using a high-resolution HPGe semiconductor detector placed at to the incident beam. …”
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Design and optimization of high-contrast gratings for multispectral VCSEL-SOI laser sources by I.S. Shashkin, M.I. Kondratov, A.E. Grishin, K.E. Pevchikh, S.O. Slipchenko, N.A. Pikhtin

“…A simulation model for spectral characteristics calculation is proposed, which includes two heterogeneously integrated parts of the VCSEL: 1) the lower output mirror based on a HCG grating in the silicon layer of the SOI surrounded by air cavities to enhance the contrast of the HCG; 2) the semiconductor VCSEL structure with an air aperture for current and optical confinement. …”
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Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste by Shengqian Zhang, Yongsheng Ren, Xingwei Yang, Wenhui Ma, Hui Chen, Guoqiang Lv, Yun Lei, Yi Zeng, Zhengxing Wang, Bingxi Yu

“…The third-generation semiconductor silicon carbide (SiC) has attracted widespread attention due to its excellent properties, such as high thermal conductivity, large bandgap, high breakdown field strength, and high saturation electronic drift rate, etc. …”
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Exciton-polariton ring Josephson junction by Nina Voronova, Anna Grudinina, Riccardo Panico, Dimitris Trypogeorgos, Milena De Giorgi, Kirk Baldwin, Loren Pfeiffer, Daniele Sanvitto, Dario Ballarini

“…In exciton-polariton condensates—that offer a path to integrated semiconductor platforms—creating weak links in ring geometries has so far remained challenging. …”
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Bistable Soft Shells for Programmable Mechanical Logic by Nan Yang, Yuming Lan, Miao Zhao, Xiaofei Shi, Kunpeng Huang, Zhongfa Mao, Damiano Padovani

“…Abstract Mechanical computing promises to integrate semiconductor‐based digital logic in several applications, but it needs straightforward programmable devices for changing computing rules in situ. …”
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Optical detection of bond-dependent and frustrated spin in the two-dimensional cobalt-based honeycomb antiferromagnet Cu3Co2SbO6 by Baekjune Kang, Uksam Choi, Taek Sun Jung, Seunghyeon Noh, Gye-Hyeon Kim, Uihyeon Seo, Miju Park, Jin-Hyun Choi, Min Jae Kim, GwangCheol Ji, Sehwan Song, Hyesung Jo, Seokjo Hong, Nguyen Xuan Duong, Subhasis Samanta, Heung-Sik Kim, Tae Heon Kim, Yongsoo Yang, Sungkyun Park, Jong Mok Ok, Jung-Woo Yoo, Jae Hoon Kim, Changhee Sohn

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Ultra robust negative differential resistance memristor for hardware neuron circuit implementation by Yifei Pei, Biao Yang, Xumeng Zhang, Hui He, Yong Sun, Jianhui Zhao, Pei Chen, Zhanfeng Wang, Niefeng Sun, Shixiong Liang, Guodong Gu, Qi Liu, Shushen Li, Xiaobing Yan

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Stability of GaN HEMT Device Under Static and Dynamic Gate Stress by Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu

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Broadband Polarization-Independent Edge Couplers With High Efficiency Based on SiN-Si Dual-Stage Structure by Yang Jiang, Zhewei Zhang, Peng Liu

“…Silicon nitride (SiN) plays a critical role in silicon photonics because of its lower refractive index, low waveguide loss, broad operating bandwidth and compatibility with complementary metal oxide semiconductor (CMOS) fabrication process. Here, we propose a polarization-independent sub-wavelength grating (SWG) edge coupler with high efficiency based on SiN-Si dual-stage structure with a length of only 315.8 μm. …”
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A fault‐diagnosis and tolerant control technique for five‐level cascaded H‐bridge inverters by Pavan Mehta, Subhanarayan Sahoo, Mayank Kumar

“…The consequences of faults increase as the number of power semiconductor devices increases and may lead to serious damage to the overall system. …”
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Prospects of Nanobiomaterials for Biosensing by Ravindra P. Singh

“…This review paper summarizes recent progress in the development of biosensors by integrating functional biomolecules with different types of nanomaterials, including metallic nanoparticles, semiconductor nanoparticles, magnetic nanoparticles, inorganic/organic hybrid, dendrimers, and carbon nanotubes/graphene.…”
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Packed bed optofluidic microreactors with Au decorated TiO2 nanoflowers for visible light photocatalytic water purification by Yujiao Zhu, Pui Hong Yeung, Tsz Wing Lo, Yao Chai, Yat Lam Wong, Ying Chen, Huaming Yang, Weixing Yu, Anatoly V. Zayats, Fengjia Xie, Xuming Zhang

“…Theoretical analysis elucidates the influences of plasmonic effect and reactor configuration on the enhanced photocatalytic activity, emphasizing the potential of integrated optofluidic systems and plasmonic-semiconductor heterostructures for sustainable water treatment and energy applications.…”
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Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout Electronics by Bagas Prabowo, Jurgen Dijkema, Xiao Xue, Fabio Sebastiano, Lieven M. K. Vandersypen, Masoud Babaie

“…In semiconductor spin quantum bits (qubits), the radio-frequency (RF) gate-based readout is a promising solution for future large-scale integration, as it allows for a fast, frequency-multiplexed readout architecture, enabling multiple qubits to be read out simultaneously. …”
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PHOTONICS TECHNOLOGY AS A WAY FOR UPGRADING KEY TECHNICAL FEATURES OF RADIO-SIGNAL DELAY DEVICES by T. N. Bakhvalova, M. E. Belkin, I. V. Gladyshev, S. A. Kudzh, A. S. Sigov

“…Based on the previous results for our investigations of various retarding materials for super-wide bandwidth long-term delay lines and shortcomings of the available fiberoptic delay links based on binary delay chain where semiconductor optical switches are used to switch in or out delay segments that are binary multiples of a minimum delay, the principles of optimization and design of next-generation fiber-optics radio-frequency delay devices are proposed. …”
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Investigating the Influence of Single Fe and Two Fe co-doping on the Structural and Magnetic Properties of Monolayer Pt2Te4 Pentagonal: A First Principle Study by Mojtaba Gholami

“…The examination revealed that the introduction of a single iron (Fe) atom and a pair of Fe atoms into the non-magnetic semiconductor monolayer of Pt2Te4 leads to magnetic moments measuring 2 µB and 4µB, respectively. …”
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