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581
Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels
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582
Photoactivity of Titanium Dioxide Foams
Published 2018-01-01“…Foam structures seem to be a good means of improving the photoactivity of semiconductor materials and can readily be used for applications such as air purification devices.…”
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583
Correlation between Electrochemical Impedance Spectroscopy and Structural Properties of Amorphous Tunisian Metanacrite Synthetic Material
Published 2014-01-01“…Therefore, by combining ac and dc electrical conductivity, a semiconductor behavior is evidenced. The dependence of the dielectric constant (ε′) and dielectric loss (ε″) on both temperature and frequency is also discussed.…”
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584
Coherent all Optical Reservoir Computing for Equalization of Impairments in Coherent Fiber Optic Communication Systems
Published 2024-01-01“…We compare the performances of the RC systems based on semiconductor saturable absorber mirror (SESAM) and highly nonlinear waveguide (HNLW). …”
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585
n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices
Published 2003-01-01“…The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. …”
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586
RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS
Published 2024-03-01“…This is a favorable condition for controlling the conductive state of materials in future applications in the semiconductor and thermoelectric industries. …”
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587
RESEARCH PROGRESS ON CUTTING TECHNOLOGY OF SIC MONO-CRYSTAL WAFER WITH WIRE SAW
Published 2015-01-01“…Having a unique physical characteristics and stable semiconductor properties,silicon carbide( Si C) monocrystal wafer has been widely used in integrated circuits,space optics and other fields.In manufacturing process of Si C monocrystal wafer,cutting is primary key process,which the cutting costs accounts for more than 50% of the whole wafer processing costs.In this paper,the datum and relevant literature of domestic and foreign were reviewed to,the current research status of Si C cutting technology,especially cutting with wire saw,and cutting equipment were studied.Moreover,the existing problems in Si C cut by wire saw and in cutting equipment was analyzed.It is proposed that the future researching direction of Si C wafer cutting technology by wire saw.…”
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588
Structural Properties of Liquid SiC during Rapid Solidification
Published 2013-01-01“…The simulated results help understand the structural properties of liquid and amorphous SiC, as well as other similar semiconductor alloys.…”
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589
Structural Mechanisms of Quasi-2D Perovskites for Next-Generation Photovoltaics
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590
Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1−x)O2 during suboxide molecular beam epitaxy
Published 2025-01-01“…Rutile GeO2 is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO2 enables bandgap engineering and the formation of heterostructure devices. …”
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591
A Switched-Capacitor-Based 7-Level Self-Balancing High-Gain Inverter Employing a Single DC Source
Published 2023-01-01“…The proposed 7-level SC inverter requires less number of switches, driver diodes, and capacitors and a lower number of semiconductor switches than most recently developed topologies. …”
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592
Synthetic Strategies and Applications of GaN Nanowires
Published 2014-01-01“…GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. …”
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593
Recent Advances in Dye Sensitized Solar Cells
Published 2014-01-01“…DSSCs comprise a sensitized semiconductor (photoelectrode) and a catalytic electrode (counter electrode) with an electrolyte sandwiched between them and their efficiency depends on many factors. …”
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594
Design of a Four-Branch Optical Power Splitter Based on Gallium-Nitride Using Rectangular Waveguide Coupling for Telecommunication Links
Published 2019-01-01“…This paper reports design of a simple four-branch optical power splitter using five parallel rectangular waveguides coupling in a gallium-nitride (GaN) semiconductor/sapphire for telecommunication links. The optimisation was conducted using the 3D FD-BPM method for long wavelength optical communication. …”
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595
Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors
Published 2024-01-01“…This paper presents a machine-learning-based approach for the degradation modeling of hot carrier injection in metal-oxide-semiconductor field-effect transistors (MOSFETs). Stress measurement data have been employed at various stress conditions of both n- and p-MOSFETs with different channel geometries. …”
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596
A New Linear Motor Force Ripple Compensation Method Based on Inverse Model Iterative Learning and Robust Disturbance Observer
Published 2018-01-01“…Permanent magnet linear motors (PMLMs) are gaining increasing interest in ultra-precision and long stroke motion stage, such as reticle and wafer stage of scanner for semiconductor lithography. However, the performances of PMLM are greatly affected by inherent force ripple. …”
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597
A Novel Hybrid T-Type Three-Level Inverter Based on SVPWM for PV Application
Published 2018-01-01“…At the same time, the space vector pulse width modulation (SVPWM) method is used to simulate the proposed topology in the MATLAB/SIMULINK platform, while the loss of each semiconductor switch is calculated using MELCOSIM software. …”
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598
Thin Film CIGS Solar Cells, Photovoltaic Modules, and the Problems of Modeling
Published 2013-01-01“…As a matter of fact, electrodeposition is known as a practical alternative to costly vacuum-based technologies for semiconductor processing in the photovoltaic device sector, but it can lead to quite different structural and electrical properties. …”
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599
Interfacial Transport Study of Ultra-Thin InN-Enhanced Quantum Dot Solar Cells
Published 2022-01-01“…Solar cells are a means of converting solar energy into electrical energy using the photovoltaic effect of semiconductor materials. This photoelectric absorber layer has been developed for more than 70 years. …”
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600
Narrowband, Visible-Blind UV-A Sensor Based on a Mg0.52Zn0.48O Film Deposited by Radio-Frequency Sputtering Using a ZnO-Mg Composite Target
Published 2014-01-01“…The fabricated PD has a metal-semiconductor-metal structure with interdigitated electrodes and exhibits a narrow 3 dB bandwidth of 26 nm with a peak response wavelength of 340 nm and a cut-off wavelength of 353 nm. …”
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