Showing 581 - 600 results of 896 for search '"Semiconductors"', query time: 0.04s Refine Results
  1. 581
  2. 582

    Photoactivity of Titanium Dioxide Foams by Maryam Jami, Ralf Dillert, Yanpeng Suo, Detlef W. Bahnemann, Michael Wark

    Published 2018-01-01
    “…Foam structures seem to be a good means of improving the photoactivity of semiconductor materials and can readily be used for applications such as air purification devices.…”
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    Article
  3. 583

    Correlation between Electrochemical Impedance Spectroscopy and Structural Properties of Amorphous Tunisian Metanacrite Synthetic Material by Nouha Jaafar, Hafsia Ben Rhaiem, Abdessalem Ben Haj Amara

    Published 2014-01-01
    “…Therefore, by combining ac and dc electrical conductivity, a semiconductor behavior is evidenced. The dependence of the dielectric constant (ε′) and dielectric loss (ε″) on both temperature and frequency is also discussed.…”
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    Article
  4. 584

    Coherent all Optical Reservoir Computing for Equalization of Impairments in Coherent Fiber Optic Communication Systems by Shiva Kumar, Mahmoud M. T. Maghrabi, Mohamed H. Bakr, Toshihiko Hirooka, Masataka Nakazawa

    Published 2024-01-01
    “…We compare the performances of the RC systems based on semiconductor saturable absorber mirror (SESAM) and highly nonlinear waveguide (HNLW). …”
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    Article
  5. 585

    n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices by Hikmat S. Hilal, Moayyad Masoud, Samar Shakhshir, Najeh Jisraw

    Published 2003-01-01
    “…The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. …”
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    Article
  6. 586

    RECONSTRUCTION OF DIVACANCY IN ZIGZAG-BUCKLED SILICENE NANORIBBONS by Van Chinh Ngo, Nguyen Huu Hanh Pham, Thi Kim Quyen Nguyen, Thi Kim Loan Phan, Thanh Tra Vu

    Published 2024-03-01
    “…This is a favorable condition for controlling the conductive state of materials in future applications in the semiconductor and thermoelectric industries. …”
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    Article
  7. 587

    RESEARCH PROGRESS ON CUTTING TECHNOLOGY OF SIC MONO-CRYSTAL WAFER WITH WIRE SAW by LI Lun, LI ShuJuan, TANG AoFei, LI Yan

    Published 2015-01-01
    “…Having a unique physical characteristics and stable semiconductor properties,silicon carbide( Si C) monocrystal wafer has been widely used in integrated circuits,space optics and other fields.In manufacturing process of Si C monocrystal wafer,cutting is primary key process,which the cutting costs accounts for more than 50% of the whole wafer processing costs.In this paper,the datum and relevant literature of domestic and foreign were reviewed to,the current research status of Si C cutting technology,especially cutting with wire saw,and cutting equipment were studied.Moreover,the existing problems in Si C cut by wire saw and in cutting equipment was analyzed.It is proposed that the future researching direction of Si C wafer cutting technology by wire saw.…”
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  8. 588

    Structural Properties of Liquid SiC during Rapid Solidification by WanJun Yan, TingHong Gao, XiaoTian Guo, YunXiang Qin, Quan Xie

    Published 2013-01-01
    “…The simulated results help understand the structural properties of liquid and amorphous SiC, as well as other similar semiconductor alloys.…”
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  9. 589
  10. 590

    Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1−x)O2 during suboxide molecular beam epitaxy by Wenshan Chen, Kingsley Egbo, Joe Kler, Andreas Falkenstein, Jonas Lähnemann, Oliver Bierwagen

    Published 2025-01-01
    “…Rutile GeO2 is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO2 enables bandgap engineering and the formation of heterostructure devices. …”
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    Article
  11. 591

    A Switched-Capacitor-Based 7-Level Self-Balancing High-Gain Inverter Employing a Single DC Source by Yatindra Gopal, Kaibalya Prasad Panda, Akanksha Kumari, Julio C. Rosas-Caro

    Published 2023-01-01
    “…The proposed 7-level SC inverter requires less number of switches, driver diodes, and capacitors and a lower number of semiconductor switches than most recently developed topologies. …”
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    Article
  12. 592

    Synthetic Strategies and Applications of GaN Nanowires by Guoquan Suo, Shuai Jiang, Juntao Zhang, Jianye Li, Meng He

    Published 2014-01-01
    “…GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. …”
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  13. 593

    Recent Advances in Dye Sensitized Solar Cells by Umer Mehmood, Saleem-ur Rahman, Khalil Harrabi, Ibnelwaleed A. Hussein, B. V. S. Reddy

    Published 2014-01-01
    “…DSSCs comprise a sensitized semiconductor (photoelectrode) and a catalytic electrode (counter electrode) with an electrolyte sandwiched between them and their efficiency depends on many factors. …”
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  14. 594

    Design of a Four-Branch Optical Power Splitter Based on Gallium-Nitride Using Rectangular Waveguide Coupling for Telecommunication Links by Retno W. Purnamaningsih, Nji R. Poespawati, Elhadj Dogheche

    Published 2019-01-01
    “…This paper reports design of a simple four-branch optical power splitter using five parallel rectangular waveguides coupling in a gallium-nitride (GaN) semiconductor/sapphire for telecommunication links. The optimisation was conducted using the 3D FD-BPM method for long wavelength optical communication. …”
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  15. 595

    Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors by Xhesila Xhafa, Ali Dogus Gungordu, Mustafa Berke Yelten

    Published 2024-01-01
    “…This paper presents a machine-learning-based approach for the degradation modeling of hot carrier injection in metal-oxide-semiconductor field-effect transistors (MOSFETs). Stress measurement data have been employed at various stress conditions of both n- and p-MOSFETs with different channel geometries. …”
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    Article
  16. 596

    A New Linear Motor Force Ripple Compensation Method Based on Inverse Model Iterative Learning and Robust Disturbance Observer by Xuewei Fu, Xiaofeng Yang, Zhenyu Chen

    Published 2018-01-01
    “…Permanent magnet linear motors (PMLMs) are gaining increasing interest in ultra-precision and long stroke motion stage, such as reticle and wafer stage of scanner for semiconductor lithography. However, the performances of PMLM are greatly affected by inherent force ripple. …”
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  17. 597

    A Novel Hybrid T-Type Three-Level Inverter Based on SVPWM for PV Application by Ayiguzhali Tuluhong, Weiqing Wang, Yongdong Li, Lie Xu

    Published 2018-01-01
    “…At the same time, the space vector pulse width modulation (SVPWM) method is used to simulate the proposed topology in the MATLAB/SIMULINK platform, while the loss of each semiconductor switch is calculated using MELCOSIM software. …”
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    Article
  18. 598

    Thin Film CIGS Solar Cells, Photovoltaic Modules, and the Problems of Modeling by Antonino Parisi, Luciano Curcio, Vincenzo Rocca, Salvatore Stivala, Alfonso C. Cino, Alessandro C. Busacca, Giovanni Cipriani, Diego La Cascia, Vincenzo Di Dio, Rosario Miceli, Giuseppe Ricco Galluzzo

    Published 2013-01-01
    “…As a matter of fact, electrodeposition is known as a practical alternative to costly vacuum-based technologies for semiconductor processing in the photovoltaic device sector, but it can lead to quite different structural and electrical properties. …”
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    Article
  19. 599

    Interfacial Transport Study of Ultra-Thin InN-Enhanced Quantum Dot Solar Cells by Shuaijie Wang, Dong Zhang, Zhenhe Ju

    Published 2022-01-01
    “…Solar cells are a means of converting solar energy into electrical energy using the photovoltaic effect of semiconductor materials. This photoelectric absorber layer has been developed for more than 70 years. …”
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  20. 600

    Narrowband, Visible-Blind UV-A Sensor Based on a Mg0.52Zn0.48O Film Deposited by Radio-Frequency Sputtering Using a ZnO-Mg Composite Target by Yuki Kohama, Takuya Nagai, Mitsuru Inada, Tadashi Saitoh

    Published 2014-01-01
    “…The fabricated PD has a metal-semiconductor-metal structure with interdigitated electrodes and exhibits a narrow 3 dB bandwidth of 26 nm with a peak response wavelength of 340 nm and a cut-off wavelength of 353 nm. …”
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    Article