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561
Global Existence and Large Time Behavior of Solutions to the Bipolar Nonisentropic Euler-Poisson Equations
Published 2014-01-01“…We study the one-dimensional bipolar nonisentropic Euler-Poisson equations which can model various physical phenomena, such as the propagation of electron and hole in submicron semiconductor devices, the propagation of positive ion and negative ion in plasmas, and the biological transport of ions for channel proteins. …”
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562
Effect of Electrochemical Treatment on Electrical Conductivity of Conical Carbon Nanotubes
Published 2016-01-01“…We assume that these changes can be associated with a decrease in the concentration of charge carriers as a result of hydrogen localization on the carbon π-orbitals, the transition from sp2 to sp3 hybridization of conical CNTs band structure, and, therefore, a metal-semiconductor-insulator transition.…”
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563
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564
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565
Features of the receiving of piezoelectric thin films by plasma spraying of powdery AlN
Published 2020-03-01“…Оne of the promising materials in solid state electronics is the AlN compound. A wide range of semiconductor devices are produced from it, such as photodetectors, LEDs, piezoelectric converters, etc. …”
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566
Ultrafast Floquet engineering of Fermi-polaron resonances in charge-tunable monolayer WSe2 devices
Published 2024-12-01Get full text
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567
Comparison Between Hysteresis and Predictive Control with Optimized Vector Selection for Direct Power Control to a Shunt Active Power Filter
Published 2025-01-01“…This paper’s objective is to evaluate the processing time, reduction of harmonic components that would be injected into the electrical grid by a non-linear load, power semiconductor losses, average switching frequency and root mean square error for the control variables. …”
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568
Improving radiation tolerance with room temperature annealing of pre-existing defects
Published 2025-01-01“…Pre-existing defects in semiconductor devices can act as nucleation sites for radiation damage. …”
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569
Nanoscale nonlocal thermal transport and thermal field emission in high-current resonant tunnel structures
Published 2025-01-01“…The model applies to vacuum and semiconductor resonant tunnel diode and triode structures with two and three electrodes and to the general case of two-way tunneling with electrode heating. …”
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570
Diverse Role of Silicon Carbide in the Domain of Nanomaterials
Published 2012-01-01“…Despite being an indirect band gap semiconductor, SiC is used in several high-performance electronic and optical devices. …”
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571
Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors
Published 2013-01-01“…The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. …”
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572
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573
Electrochemical Study of Anodized Titanium in Phosphoric Acid
Published 2020-01-01“…Thus, the Mott Schottky model revealed that the formed film is an n-type semiconductor. The density of charge carriers is in good agreement with those found in the literature. …”
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574
Fatigue Life Prediction of the Zirconia Fixture Based on Boundary Element Method
Published 2020-01-01“…Zirconia grinding fixtures have been widely used in semiconductor industry to improve the quality and precision of the products. …”
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575
Resistance spikes of NiO/ZnO heterostructures in magnetic field
Published 2025-01-01“…NiO/ZnO semiconductor heterostructures were fabricated via electrospinning to investigate their resistance behavior under varying magnetic fields. …”
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576
Fabrication of a Miniature Zinc Aluminum Oxide Nanowire Array Gas Sensor and Application for Environmental Monitoring
Published 2014-01-01“…A miniature n-type semiconductor gas sensor was fabricated successfully using zinc aluminum oxide nanowire array and applied to sense oxygen. …”
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577
Simple Modeling of the Ratio of Fields at a Tip and a Contacting Surface with External Illumination
Published 2018-01-01Get full text
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578
Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire
Published 2025-03-01“…Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were then fabricated with a gate-recessed process, incorporating a 5 µm gate field plate structure. …”
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579
Investigation of Fe-Doped Graphitic Carbon Nitride-Silver Tungstate as a Ternary Visible Light Active Photocatalyst
Published 2021-01-01“…Graphitic carbon nitride alone or in combination with various other semiconductor metal oxide materials acts as a competent visible light active photocatalyst for the removal of recalcitrant organic pollutants from wastewater. …”
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580
Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays
Published 2025-01-01Get full text
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