Showing 561 - 580 results of 896 for search '"Semiconductors"', query time: 0.05s Refine Results
  1. 561

    Global Existence and Large Time Behavior of Solutions to the Bipolar Nonisentropic Euler-Poisson Equations by Min Chen, Yiyou Wang, Yeping Li

    Published 2014-01-01
    “…We study the one-dimensional bipolar nonisentropic Euler-Poisson equations which can model various physical phenomena, such as the propagation of electron and hole in submicron semiconductor devices, the propagation of positive ion and negative ion in plasmas, and the biological transport of ions for channel proteins. …”
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    Article
  2. 562

    Effect of Electrochemical Treatment on Electrical Conductivity of Conical Carbon Nanotubes by S. M. Khantimerov, P. N. Togulev, E. F. Kukovitsky, N. M. Lyadov, N. M. Suleimanov

    Published 2016-01-01
    “…We assume that these changes can be associated with a decrease in the concentration of charge carriers as a result of hydrogen localization on the carbon π-orbitals, the transition from sp2 to sp3 hybridization of conical CNTs band structure, and, therefore, a metal-semiconductor-insulator transition.…”
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  3. 563
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  5. 565

    Features of the receiving of piezoelectric thin films by plasma spraying of powdery AlN by V. S. Feshchenko, K. N. Zyablyuk, E. A. Senokosov, V. I. Chukita, D. A. Kiselev

    Published 2020-03-01
    “…Оne of the promising materials in solid state electronics is the AlN compound. A wide range of semiconductor devices are produced from it, such as photodetectors, LEDs, piezoelectric converters, etc. …”
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    Article
  6. 566
  7. 567

    Comparison Between Hysteresis and Predictive Control with Optimized Vector Selection for Direct Power Control to a Shunt Active Power Filter by Ruben da C. Ferreira, Pedro H. de M. Martins, Nady Rocha, Edison R. C. da Silva, Victor F. M. Bezerra Melo

    Published 2025-01-01
    “…This paper’s objective is to evaluate the processing time, reduction of harmonic components that would be injected into the electrical grid by a non-linear load, power semiconductor losses, average switching frequency and root mean square error for the control variables. …”
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    Article
  8. 568

    Improving radiation tolerance with room temperature annealing of pre-existing defects by Md Hafijur Rahman, Felix Cooper, Miguel L. Crespillo, Khalid Hattar, Aman Haque, Fan Ren, Stephen Pearton, Douglas Wolfe

    Published 2025-01-01
    “…Pre-existing defects in semiconductor devices can act as nucleation sites for radiation damage. …”
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  9. 569

    Nanoscale nonlocal thermal transport and thermal field emission in high-current resonant tunnel structures by Michael V. Davidovich, Igor S. Nefedov, Olga E. Glukhova, J. Miguel Rubi

    Published 2025-01-01
    “…The model applies to vacuum and semiconductor resonant tunnel diode and triode structures with two and three electrodes and to the general case of two-way tunneling with electrode heating. …”
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    Article
  10. 570

    Diverse Role of Silicon Carbide in the Domain of Nanomaterials by T. Sahu, B. Ghosh, S. K. Pradhan, T. Ganguly

    Published 2012-01-01
    “…Despite being an indirect band gap semiconductor, SiC is used in several high-performance electronic and optical devices. …”
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    Article
  11. 571

    Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors by Biljana Simić, Dejan Nikolić, Koviljka Stanković, Ljubinko Timotijević, Srboljub Stanković

    Published 2013-01-01
    “…The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. …”
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  12. 572
  13. 573

    Electrochemical Study of Anodized Titanium in Phosphoric Acid by M. Khadiri, M. Elyaagoubi, R. Idouhli, Y. Koumya, O. Zakir, J. Benzakour, A. Benyaich, A. Abouelfida, A. Outzourhit

    Published 2020-01-01
    “…Thus, the Mott Schottky model revealed that the formed film is an n-type semiconductor. The density of charge carriers is in good agreement with those found in the literature. …”
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    Article
  14. 574

    Fatigue Life Prediction of the Zirconia Fixture Based on Boundary Element Method by Y. W. Wang, J. J. Ye, W. P. He, G. G. Cai, B. Q. Shi

    Published 2020-01-01
    “…Zirconia grinding fixtures have been widely used in semiconductor industry to improve the quality and precision of the products. …”
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  15. 575

    Resistance spikes of NiO/ZnO heterostructures in magnetic field by Yu-Ze Sun, Li-Peng Qiu, Shi-Long Gao, Shi-Ze Cao, Shuai-Jie Wang, Wen-Peng Han, Jun Zhang, Yun-Ze Long

    Published 2025-01-01
    “…NiO/ZnO semiconductor heterostructures were fabricated via electrospinning to investigate their resistance behavior under varying magnetic fields. …”
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  16. 576

    Fabrication of a Miniature Zinc Aluminum Oxide Nanowire Array Gas Sensor and Application for Environmental Monitoring by Chin-Guo Kuo, Chi-Wu Huang, Jung-Hsuan Chen, Yueh-Han Liu

    Published 2014-01-01
    “…A miniature n-type semiconductor gas sensor was fabricated successfully using zinc aluminum oxide nanowire array and applied to sense oxygen. …”
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  17. 577
  18. 578

    Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire by Yueh-Han Chuang, Fu-Gow Tarntair, Tzu-Wei Wang, Anoop Kumar Singh, Po-Liang Liu, Dong-Sing Wuu, Hao-Chung Kuo, Xiuling Li, Ray-Hua Horng

    Published 2025-03-01
    “…Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were then fabricated with a gate-recessed process, incorporating a 5 µm gate field plate structure. …”
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  19. 579

    Investigation of Fe-Doped Graphitic Carbon Nitride-Silver Tungstate as a Ternary Visible Light Active Photocatalyst by Eid H. Alosaimi, Nadia Azeem, Noor Tahir, Asim Jilani, Muhammad Zahid, Salman. S. Alharthi, Javed Iqbal, Muhammad Yaseen, Zulfiqar Ahmad Rehan, Imran Shahid

    Published 2021-01-01
    “…Graphitic carbon nitride alone or in combination with various other semiconductor metal oxide materials acts as a competent visible light active photocatalyst for the removal of recalcitrant organic pollutants from wastewater. …”
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    Article
  20. 580