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Methylene Blue Dye Photodegradation during Synthesis and Characterization of WO3 Nanoparticles
Published 2022-01-01“…Semiconductor-based photocatalytic systems have found widespread use in environmental pollution cleanup and renewable energy production. …”
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502
Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD
Published 2003-01-01Get full text
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503
A Study on the Development of Real-Time Chamber Contamination Diagnosis Sensors
Published 2024-12-01“…Plasma processes are critical for achieving precise device fabrication in semiconductor manufacturing. However, polymer accumulation during processes like plasma etching can cause chamber contamination, adversely affecting plasma characteristics and process stability. …”
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Optical signatures of lattice strain in chemically doped colloidal quantum wells
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506
Metrology of metasurfaces: optical properties
Published 2025-01-01“…Relying on planar nanofabrication processes closely akin to the semiconductor industry, metasurface technology could benefit from cost-effective and potentially large-scale fabrication techniques forthwith. …”
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507
From source to sink: the path to efficient energy harvesting with LEDs and displays
Published 2025-02-01Get full text
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508
Progress in active devices for optical fiber communication
Published 2016-05-01“…The rapid progress of optical fiber communication makes it become the key technology for the information society.The active and passive optoelectronic devices are the foundation of the optical communication.The progress and development trend of the key active optoelectronic devices were reviewed,including DFB laser,photonic integrated circuit,980 nm high power laser for EDFA pumping,compound semiconductor photodetector and Si-based long wavelength photodetector.…”
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509
METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS
Published 2015-04-01“…The method was suggested and the laser control set-up was developed of the arrow bend and bend profile of the semiconductor wafers. It was established, that on the basis of determining the inclination angle of tangent at any point of the surface due to deflection registration of the r eflected laser beam from the position, corresponding to reflection from the ideally plat surface, by means of its scanning by one of the wafer diameters it is possible to determine its bend profile.…”
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510
On the existence of solution of a two-point boundary value problem in a cylindrical floating zone
Published 2001-01-01“…Existence of one solution for a two-point boundary value problem with a positive parameter Q arising in the study of surface-tension-induced flows of a liquid metal or semiconductor is studied. On the basis of the upper-lower solution method and Schauder's fixed point theorem, it is proved that the problem admits a solution when 0≤Q≤12.683. …”
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511
Dye-Sensitized Nanocrystalline ZnO Solar Cells Based on Ruthenium(II) Phendione Complexes
Published 2011-01-01“…The metal complexes (RuII (phen)2(phendione))(PF6)2(1), [RuII (phen)(bpy)(phendione))(PF6)2 (2), and (RuII (bpy)2(phendione))(PF6)2 (3) (phen = 1,10-phenanthroline, bpy = 2,2′-bipyridine and phendione = 1,10-phenanthroline-5,6-dione) have been synthesized as photo sensitizers for ZnO semiconductor in solar cells. FT-IR and absorption spectra showed the favorable interfacial binding between the dye-molecules and ZnO surface. …”
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512
Excited states of mono- and biruthenium(II) complexes adsorbed on nanocrystalline titanium dioxide studied by electroabsorption spectroscopy
Published 2025-02-01“…The EA spectra of Ru complexes sensitizing a TiO2 semiconductor were compared with the spectra of these complexes in the form of solid neat films, both of which parametrized within the Liptay theory. …”
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513
Passivation of substrates with hydrogen to reduce the number of electron traps in the buffer layer at the contact of silicon with Ba1-xSrxTiO3
Published 2024-12-01“…High-frequency C–V curves of the metal–dielectric–semiconductor structures with Ba0.8Sr0.2TiO3 insulating layers deposited on both wafers have been measured. …”
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514
Classification of electric resistive heating boilers for autonomous water heating systems
Published 2023-10-01“…The object of the research is the variants of designs of heat exchangers for generating heat energy using resistor heating elements of normal conductor and semiconductor type. Various variants of indirect heating of the coolant and contacts of the surface of the heating elements with the coolant are considered. …”
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515
THEORETICAL STUDIES ON THE MAGNETIC, ELECTRICAL, AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC Ba(Zr\(_{0.2}\)Ti\(_{0.8}\)O\(_3\)) MATERIALS WITH MANGANESE DOPING
Published 2024-09-01“…The electronic structure calculations revealed that pristine BZT material behaves as a p-type semiconductor with direct and indirect bandgaps of 3.18 eV and 2.08 eV, respectively. …”
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Dislocation climb mediated Coble-type grain boundary deformation in gold nanocrystals
Published 2025-01-01Get full text
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519
Effects of Temperature on the Microstructure and Magnetic Property of Cr-Doped ZnO DMS Prepared by Hydrothermal Route Assisted by Pulsed Magnetic Fields
Published 2013-01-01“…In the present work, Cr-doped ZnO diluted magnetic semiconductor was synthesized by hydrothermal method under pulsed magnetic fields. …”
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520
Magnetic field strength gradiometer
Published 2021-09-01“…The paper considers the possibility of constructing a magnetic field strength gradient meter based on the absolute helical instability of electron-hole plasma of a semiconductor sample. The functional scheme of the gradiometer and the results of experimental and theoretical studies of the sensitive element of the gradiometer are presented.…”
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