Chalcogenide perovskites: enticing prospects across a wide range of compositions and optoelectronic properties for stable photodetector devices by Shilpa Mariam Samuel, Sadasivan Shaji, David Avellaneda Avellaneda, Bindu Krishnan

“…These are unconventional semiconductors with the formula ABX _3 , where A and B are cations and X is a chalcogen, which covers the compounds with the corner sharing perovskite structures of type II-IV- VI _3 compounds (II = Ba, Sr, Ca, Eu; IV = Zr, Hf; VI = S, Se) and III _1 -III _2 -VI _3 compounds (III _1 and III _2 = Lanthanides, Y, Sc; VI = S, Se). …”
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Controllable synthesis of nonlayered high-κ Mn3O4 single-crystal thin films for 2D electronics by Jiashuai Yuan, Chuanyong Jian, Zhihui Shang, Yu Yao, Bicheng Wang, Yixiang Li, Rutao Wang, Zhipeng Fu, Meng Li, Wenting Hong, Xu He, Qian Cai, Wei Liu

“…However, high dielectric constant (κ) materials, which can be integrated with 2D semiconductors, are still rare. Here, we report a hydrate-assisted thinning chemical vapor deposition (CVD) technique to grow manganese oxide (Mn3O4) single crystal nanosheets, enabled by a strategy to minimize the substrate lattice mismatch and control the growth kinetics. …”
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Formation on quartz substrate and study of properties of nanostructured layers from polyvinylen obtained by dehydrochlorination of polyvinyl chloride with modifying additive — iron... by O. V. Krivozubov, Yu. G. Kryazhev, I. V. Anikeeva, N. A. Davletkildeev, D. V. Sokolov, O. N. Semenova

“…The work is devoted to solving the urgent task of developing simple ways of applying nanostructured layers of polymers to different substrates with a pairing system with properties of organic semiconductors. To obtain such polymers used dehydrochlorination of polyvinyl chloride under the influence of anilin in the solution dimethylsulfoxide. …”
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Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2 by Xiuzhen Li, Biao Qin, Yaxian Wang, Yue Xi, Zhiheng Huang, Mengze Zhao, Yalin Peng, Zitao Chen, Zitian Pan, Jundong Zhu, Chenyang Cui, Rong Yang, Wei Yang, Sheng Meng, Dongxia Shi, Xuedong Bai, Can Liu, Na Li, Jianshi Tang, Kaihui Liu, Luojun Du, Guangyu Zhang

“…Here, we demonstrate the rewritable, non-volatile memories at room-temperature with a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS2. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8 V, a high conductance ratio of above 106, a long retention time of >10 years, and a programming endurance greater than 104 cycles. …”
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Neobacillus driksii sp. nov. isolated from a Mars 2020 spacecraft assembly facility and genomic potential for lasso peptide production in Neobacillus by Asif Hameed, Francesca McDonagh, Pratyay Sengupta, Georgios Miliotis, Shobhan Karthick Muthamilselvi Sivabalan, Lukasz Szydlowski, Anna Simpson, Nitin Kumar Singh, Punchappady Devasya Rekha, Karthik Raman, Kasthuri Venkateswaran

“…This study highlights the unique metabolic capabilities of N. driksii, underscoring their potential in antimicrobial research and biotechnology.IMPORTANCEThe microbial surveillance of the Mars 2020 assembly cleanroom led to the isolation of novel N. driksii with potential applications in cleanroom environments, such as hospitals, pharmaceuticals, semiconductors, and aeronautical industries. N. driksii genomes were found to possess genes responsible for producing lasso peptides, which are crucial for antimicrobial defense, communication, and enzyme inhibition. …”
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1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate by Tomomasa Watanabe, Mikihiro Yokozeki, Masashi Takanohashi, Michinori Shiomi, Hiroshi Nakajima, Masayuki Tanaka, Daiji Kasahara, Noriko Kobayashi, Noriyuki Futagawa

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Different temperatures leakage mechanisms of (Al2O3)x(HfO2)1−x gate Dielectrics deposited by atomic layer deposition by Yifan Jia, Yi Fu, Xiangtai Liu, Zhan Wang, Pengcheng Jiang, Qin Lu, Shaoqing Wang, Yunhe Guan, Lijun Li, Haifeng Chen, Yue Hao

“…Abstract (Al2O3)x(HfO2)1−x films with varying compositions were deposited on silicon substrates via plasma-enhanced atomic layer deposition (PEALD), and metal-oxide-semiconductor (MOS) capacitors were fabricated. The impact of varying induced Al content on the dielectric properties of HfO2 was examined through electrical measurements. …”
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Oriented wide-bandgap perovskites for monolithic silicon-based tandems with over 1000 hours operational stability by Yuxin Yao, Biao Li, Degong Ding, Chenxia Kan, Pengjie Hang, Daoyong Zhang, Zechen Hu, Zhenyi Ni, Xuegong Yu, Deren Yang

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Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs by Tae-Hyun Kil, Ju-Won Yeon, Hyo-Jun Park, Moon-Kwon Lee, Eui-Cheol Yun, Min-Woo Kim, Sang-Min Kang, Jun-Young Park

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Correlation Between Recombination Dynamics and Quantum Barrier Thickness in InGaN-Based Micro-LEDs by Mengyue Mo, Ying Jiang, Penggang Li, Zhiqiang Liu, Xu Yang, Weifang Lu, Jinchai Li, Kai Huang, Junyong Kang, Rong Zhang

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Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting by Hao Yan, Bingxue Li, Junjie Pan, Xuan Fang, Yongji Yu, Dengkui Wang, Dan Fang, Yanyan Zhan, Xiaohua Wang, Jinhua Li, Xiaohui Ma, Guangyong Jin

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Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect by Zhiyuan Liu, Haicheng Cao, Xiao Tang, Tingang Liu, Yi Lu, Zixian Jiang, Na Xiao, Xiaohang Li

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Fast Formation of Surface Oxidized Zn Nanorods and Urchin-Like Microclusters by R. López, T. Díaz, G. García, E. Rosendo, R. Galeazzi, A. Coyopol, H. Juárez, M. Pacio, F. Morales, A. I. Oliva

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Thermoregulatory integration in hand prostheses and humanoid robots through blood vessel simulation by Sang-Mi Jeong, Jonguk Yang, Youngsoo Kang, Hee Sung Seo, Keumyoung Seo, Taekyung Lim, Sanghyun Ju

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The Investigation of Field Plate Design in 500 V High Voltage NLDMOS by Donghua Liu, Xiangming Xu, Feng Jin, Wenting Duan, Huihui Wang, Jing Shi, Yuan Yao, Jun Hu, Wensheng Qian, Pengfei Wang, David Wei Zhang

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Molecular ferroelectric self-assembled interlayer for efficient perovskite solar cells by Chang Xu, Pengjie Hang, Chenxia Kan, Xiangwei Guo, Xianjiang Song, Chenran Xu, Guofeng You, Wei-Qiang Liao, Haiming Zhu, Dawei Wang, Qi Chen, Zijian Hong, Ren-Gen Xiong, Xuegong Yu, Lijian Zuo, Hongzheng Chen

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Design of a Novel W-Sinker RF LDMOS by Xiangming Xu, Han Yu, Jingfeng Huang, Chun Wang, Wei Ji, Zhengliang Zhou, Ying Cai, Yong Wang, Pingliang Li, Peng-Fei Wang, David Wei Zhang

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Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter by Bin Wang, Ziyuan Tang, Yuxiang Song, Lu Liu, Weitao Yang, Longsheng Wu

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Analysis of thermal effects according to channel and drain contact metal distance by Do Gyun An, Un Hyun Lim, Young Suh Song, Hyunwoo Kim, Jang Hyun Kim

“…Unlike conventional planar metal-oxide-semiconductor field-effect transistors (MOSFET), multi-gate devices such as fin field-effect transistors (FinFET) suffer from serious electrical performance issues due to the self-heating effect (SHE) because the channel is surrounded by the gate dielectric. …”
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Electromagnetic Functions Modulation of Recycled By-Products by Heterodimensional Structure by Ze Nan, Wei Wei, Zhenhua Lin, Ruimei Yuan, Miao Zhang, Jincheng Zhang, Jianyong Ouyang, Jingjing Chang, Hejun Li, Yue Hao

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