Si1−xGex nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis by Shaleen Nr, Sangeeta Singh, Pankaj Kumar

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A Complementary Low Schottky Barrier Nonvolatile Bidirectional Reconfigurable Field Effect Transistor Based on Dual Metal Silicide S/D Contacts by Liu Xi, Ya Wang, Meile Wu, Lin Qi, Mengmeng Li, Shouqiang Zhang, Xiaoshi Jin

Subjects: “…complementary low Schottky barrier…”
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Electrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si by A. I. Blesman, R. B. Burlakov, D. A. Polonyankin

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Electrical and photoelectric properties of photocell on base of Schottky barrier contact Au-n-GaAs by A. I. Blesman, R. B. Burlakov

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Influence of terms of fabrication on electrical and photoelectric properties of photocell on base of Schottky barrier contact Pd-n-GaAs by A. I. Blesman, R. B. Burlakov

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Hall element with two Schottky barrier contacts Al-p-Si by R. B. Burlakov

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Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-Si by A. I. Blesman, R. B. Burlakov

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Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach by Sungjoo Song, Jong-Hyun Kim, Jongyoun Park, Seung-Hwan Kim, Dongjin Ko, Hyejung Choi, Seiyon Kim, Hyun-Yong Yu

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Photocell with two Schottky barrier contacts Ti-p-Si and ohmic silicide contact NiSi-p-Si by R. B. Burlakov

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Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics by Mohit Kumar, Laurent Xu, Timothée Labau, Jérôme Biscarrat, Simona Torrengo, Matthew Charles, Christophe Lecouvey, Aurélien Olivier, Joelle Zgheib, René Escoffier, Julien Buckley

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Photocell with two Schottky barrier contacts Al-p-Siand ohmic silicide contact by R. B. Burlakov

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Schottky‐barrier graphene nanoribbon field‐effect transistors‐based field‐programmable gate array's configurable logic block and routing switch by Sayed Ali Seif Kashani, Hossein Karimiyan Alidash, Sandeep Miryala

Subjects: “…Schottky-barrier graphene nanoribbon field-effect transistors…”
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