Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing by Mohammed Tanvir Quddus, Alvaro D. Latorre-Rey, Zeinab Ramezani, Mihir Mudholkar

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A Complementary Low Schottky Barrier Nonvolatile Bidirectional Reconfigurable Field Effect Transistor Based on Dual Metal Silicide S/D Contacts by Liu Xi, Ya Wang, Meile Wu, Lin Qi, Mengmeng Li, Shouqiang Zhang, Xiaoshi Jin

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Enhanced multifaceted model for plasmon-driven Schottky solar cells with integrated thermal effects by Brahim Aïssa, Ahmer A. Baloch, Adnan Ali, Anirban Mitra

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Electrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si by A. I. Blesman, R. B. Burlakov, D. A. Polonyankin

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Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts by Souad Benykrelef, Sedik Mansouri, Hicham Helal, Abdelaziz Rabehi, Abdelaziz Joti, Zineb Benamara

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The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact by Jianhua Zhang, Yapeng Li, Jiqiang Jia, Zhaoyu Luo

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Electrical and photoelectric properties of photocell on base of Schottky barrier contact Au-n-GaAs by A. I. Blesman, R. B. Burlakov

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Influence of terms of fabrication on electrical and photoelectric properties of photocell on base of Schottky barrier contact Pd-n-GaAs by A. I. Blesman, R. B. Burlakov

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A Novel Design of MSM Photodetector and the Investigation of Two-Top Contacts Spacing Effects on Detection Speed and Transient Response by Savarimuthu Robinson, Yunjian Jia

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Application of vanadium dioxide in acoustic logging devices by N. A. Semenyuk, Yu. V. Kuznetsova, Vad. I. Surikov, Val. I. Surikov, А. А. Teploukhov

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Si1−xGex nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis by Shaleen Nr, Sangeeta Singh, Pankaj Kumar

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Hall element with two Schottky barrier contacts Al-p-Si by R. B. Burlakov

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Development of a Zero-Bias Detector Based on T-Type Structure by Xiaobo Zhang, Jin Meng, Jingtao Zhou, Baijun Zhang, Zenghui Liu, Zexing Yuan

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Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-Si by A. I. Blesman, R. B. Burlakov

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Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach by Sungjoo Song, Jong-Hyun Kim, Jongyoun Park, Seung-Hwan Kim, Dongjin Ko, Hyejung Choi, Seiyon Kim, Hyun-Yong Yu

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Photocell with two Schottky barrier contacts Ti-p-Si and ohmic silicide contact NiSi-p-Si by R. B. Burlakov

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Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics by Mohit Kumar, Laurent Xu, Timothée Labau, Jérôme Biscarrat, Simona Torrengo, Matthew Charles, Christophe Lecouvey, Aurélien Olivier, Joelle Zgheib, René Escoffier, Julien Buckley

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Photocell with two Schottky barrier contacts Al-p-Siand ohmic silicide contact by R. B. Burlakov

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Schottky‐barrier graphene nanoribbon field‐effect transistors‐based field‐programmable gate array's configurable logic block and routing switch by Sayed Ali Seif Kashani, Hossein Karimiyan Alidash, Sandeep Miryala

Subjects: “…Schottky-barrier graphene nanoribbon field-effect transistors…”
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