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    TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs

    TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs by Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani

    Published 2025-03-01
    “…Power Electronic Devices and Components…”
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