Dynamics of creep rate change of dislocations density and point defects in the materials under irradiation with account of generation of vacancies by gliding dislocations by T. P. Didenko, P. O. Selyshchev

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Exhaustive characterization of modified Si vacancies in 4H-SiC by Davidsson Joel, Babar Rohit, Shafizadeh Danial, Ivanov Ivan G., Ivády Viktor, Armiento Rickard, Abrikosov Igor A.

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Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors by Soroush Ghandiparsi, Bikram Chatterjee, Jimmy‐Xuan Shen, Miranda S. Gottlieb, Clint D. Frye, Joseph D. Schneider, Ryan D. Muir, Brandon W. Buckley, Sara E. Harrison, Qinghui Shao, Joel B. Varley, Lars F. Voss

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Unraveling the Origin of Donor‐Like Effect in Bismuth–Telluride‐Based Thermoelectric Materials by Feng Liu, Min Zhang, Pengfei Nan, Xin Zheng, Yuzheng Li, Kang Wu, Zhongkang Han, Binghui Ge, Xinbing Zhao, Chenguang Fu, Tiejun Zhu

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Revisiting the effect of point defects on the decay of the longitudinal optical mode in semiconductors by Julian Anaya

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Features of the defect structure of LiNbO3:Cu crystals and their manifestation in the IR absorption spectrum in the region of stretching vibrations of hydrogen atoms OН– -group by N.V. Sidorov, L.A. Bobreva, M.N. Palatnikov, A.Yu. Pyatyshev, M.K. Tarabrin, A.A. Bushunov

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On the kinetics of sapphire charging and luminescence under electron irradiation by A.A. Tatarintsev, E. Yu. Zykova, A.E. Ieshkin, N.G. Orlikovskaya, D.R. Bessmertniy, V.A. Kiselevskiy

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Dynamic drag of dislocations in aged aluminum alloys under laser irradiation by V.V. Malashenko

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Diffraction methods for determination of composition and structural parameters of langasite family compounds by Е. А. Tyunina, I. А. Kaurova, G. М. Kuz’micheva, V. B. Rybakov, A. Cousson, O. Zaharko

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Molecular dynamics simulations of primary damage formation and tensile properties of irradiated Cu–Ni binary alloys by Xiao-Ping Wei, Hairui Li, Yaling Zhang, Xue Li, Chen Li

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Low-Frequency Admittance of Capacitor with Working Substance “Insulator–Partially Disordered Semiconductor– Insulator” by N. A. Poklonski, I. I. Anikeev, S. A. Vyrko

Subjects: “…triple-charged intrinsic point defects…”
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Solid State Defect Emitters With no Electrical Activity by Pei Li, Song Li, Péter Udvarhelyi, Bing Huang, Adam Gali

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Fast prediction of irradiation-induced cascade defects using denoising diffusion probabilistic model by Ruihao Liao, Ke Xu, Yifan Liu, Zibo Gao, Shuo Jin, Linyun Liang, Guang-Hong Lu

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Impact of high-temperature processing steps on the long-term stability of charge carrier lifetime in n-type FZ-silicon by Mehler Melanie, Weinert Nicolas, Aßmann Nicole, Herguth Axel, Hahn Giso, Geml Fabian

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Calculation of the Point Defects Ensemble in Zinc Sulfide Single Crystals and Films by D.I. Kurbatov

Subjects: “…Point defects…”
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Machine‐Learning‐Assisted Understanding of Depth‐Dependent Thermal Conductivity in Lithium Niobate Induced by Point Defects by Yunjia Bao, Tao Chen, Zhuo Miao, Weidong Zheng, Puqing Jiang, Kunfeng Chen, Ruiqiang Guo, Dongfeng Xue

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Quantitative Defect Analysis in CVD‐Grown Monolayer MoS2 via In‐Plane Raman Vibration by Moha Feroz Hossen, Sachin Shendokar, Md. Arifur Rahman Khan, Shyam Aravamudhan

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Defect Generation and Evolution in Irradiated Epitaxial Films and Heterostructures of Fe3O4 and Cr2O3 by Tiffany C. Kaspar, Maciej O. Liedke, Kayla H. Yano, Jijo Christudasjustus, Hyosim Kim, Yongqiang Wang, Mark E. Bowden, George E. Sterbinsky, Maik Butterling, Eric Hirschmann, Andreas Wagner, Daniel K. Schreiber

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CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION by N. A. Poklonski, A. I. Kovalev, N. I. Gorbachuk, S. V. Shpakovski

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Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects by N. A. Poklonski, S. A. Vyrko, A. I. Kovalev, I. I. Anikeev, N. I. Gorbachuk

Subjects: “…triple-charged intrinsic point defects…”
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