Showing 121 - 140 results of 542 for search '"Optoelectronics"', query time: 0.04s Refine Results
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    Observation of anomalously large Nernst effects in conducting polymers by Yingqiao Ma, Xinglong Ren, Ye Zou, Wenrui Zhao, Dongyang Wang, Zhen Ji, Juncheng Fan, Chaoyi Yan, Lanyi Xiang, Gaoyang Ge, Xiaojuan Dai, Fengjiao Zhang, Ting Lei, Henning Sirringhaus, Chong-an Di, Daoben Zhu

    Published 2025-02-01
    “…This knowledge could provide important insight into their elusive mechanism, which are crucial for flexible optoelectronic and thermoelectric applications. However, within the Landau’s Fermi-liquid picture, the Nernst coefficient has demonstrated to be proportional to the charge mobility, and thus should be negligible in less ordered polymers with inherent low mobility. …”
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  8. 128

    Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon by Ying Chang, Saisai He, Mingyuan Sun, Aixia Xiao, Jiaxin Zhao, Lulu Ma, Wei Qiu

    Published 2021-01-01
    “…Monocrystalline silicon (c-Si) is still an important material related to microelectronics/optoelectronics. The nondestructive measurement of the c-Si material and its microstructure is commonly required in scientific research and industrial applications, for which Raman spectroscopy is an indispensable method. …”
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    Functional Dyes, and Some Hi-Tech Applications by Reda M. El-Shishtawy

    Published 2009-01-01
    “…An overview of the recent developments in functional dyes, which are useful for hi-tech applications for those based on optoelectronics, such as dye sensitized solar cells, photochromic dyes and biomedical applications, such as photodynamic therapy for the treatment of cancer and fluorescent sensors is presented.…”
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  18. 138

    Interface dipole evolution from the hybrid coupling between nitrogen-doped carbon quantum dots and polyethylenimine featuring the electron transport thin layer at Al/Si interfaces by Sasimontra Timjan, Ta-Cheng Wei, Kuan-Han Lin, Yi-Ting Li, Po-Hsuan Hsiao, Chia-Yun Chen

    Published 2025-01-01
    “…The assessment of electron transport layer (ETL) for rear-contact engineering of silicon (Si) based optoelectronics has been considered as one of the critical challenges that leverage the performance improvement and device reliability. …”
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  19. 139

    REMOTE DEFECTOSCOPY OF THE EXTENSIVE ARTICLES SURFACES by E. I. Marukovich, E. M. Patuk, O. Ju. Bondarev, A. I. Potapov, A. P. Markov, A. G. Starovojtov

    Published 2010-09-01
    “…The ways and means of combined remote inter- and introscopy of extensive articles surfaces taking into account informational-transforming possibilities of the modern optoelectronics, microprocessor technique and optical-fibrous technologies are analyzed.…”
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  20. 140

    Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy by Arsenii A. Gavdush, Vladislav A. Zhelnov, Kirill B. Dolganov, Alexander A. Bogutskii, Sergey V. Garnov, Maria G. Burdanova, Dmitry S. Ponomarev, Qiwu Shi, Kirill I. Zaytsev, Gennadii A. Komandin

    Published 2025-01-01
    “…Abstract Vanadium dioxide ( $$\hbox {VO}_2$$ ) is a favorable material platform of modern optoelectronics, since it manifests the reversible temperature-induced insulator-metal transition (IMT) with an abrupt and rapid changes in the conductivity and optical properties. …”
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