Showing 661 - 680 results of 759 for search '"Optoelectronics"', query time: 0.05s Refine Results
  1. 661

    Colorimetric Detection of Dopamine Based on Peroxidase-like Activity of β-CD Functionalized AuNPs by Sara Anderson, Hamish Shepherd, Kiran Boggavarapu, Janak Paudyal

    Published 2025-01-01
    “…Because of easy preparation, excellent biocompatibility, and unique optoelectronic properties, gold nanoparticles (AuNPs) have attracted increasing attention in many fields, including nanozymes. …”
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    Article
  2. 662

    Effect of growth temperature on the physical properties of kesterite Cu2ZnSnS4 (CZTS) thin films by Fatima Zohra Boutebakh, N. Attaf, M. S. Aida

    Published 2025-01-01
    “…The effect of substrate temperature (Tsub), ranging from 300°C to 390°C on their structure and optoelectronic properties. The structural properties reveal that all the prepared CZTS films have a kesterite structure, with a preferential orientation along (112) plane, and presence of secondary phases. …”
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    Article
  3. 663

    Determining Parameters of Metal-Halide Perovskites Using Photoluminescence with Bayesian Inference by Manuel Kober-Czerny, Akash Dasgupta, Seongrok Seo, Florine M. Rombach, David P. McMeekin, Heon Jin, Henry J. Snaith

    Published 2025-01-01
    “…Our approach of coupling spectroscopic measurements with advanced computational analysis will help speed up scientific research in the field of optoelectronic materials and devices and exemplifies how carefully constructed computational algorithms can derive valuable plurality of information from simple datasets. …”
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    Article
  4. 664

    Oscillatory mechanoluminescence of Mn2+-doped SrZnOS in dynamic response to rapid compression by Hao Wang, Tingting Zhao, Mei Li, Junlong Li, Ke Liu, Shang Peng, Xuqiang Liu, Bohao Zhao, Yanlong Chen, Jiao An, Xiaohui Chen, Sheng Jiang, Chuanlong Lin, Wenge Yang

    Published 2025-01-01
    “…The present work uncovers the temporal characteristics of self-recoverable ML and provides insight into understanding the rate-dependent ML kinetics in the mechanical-photon energy conversion, conducive to the design of ML-based optoelectronic devices.…”
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  5. 665

    Plasmon-enhanced visible photodetectors based on hexagonal boron nitride (hBN) with gold (Au), silver (Ag), and non-alloyed bimetallic (Au/Ag) nanoparticles by Muhammad Nur Syafiq Mohamad Ismail, Muhammad Aiman Saufi Ahmad Fahri, Chee Leong Tan, Rozalina Zakaria

    Published 2025-01-01
    “…This approach of integrating 2D/metal opens possibilities for fabricating low-cost, high-performance, flexible photodetectors for a range of optoelectronic devices.…”
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    Article
  6. 666

    Terahertz generation from surface of the bulk and monolayer tungsten diselenide by D. I. Khusyainov, A. V. Gorbatova, A. M. Buryakov

    Published 2020-12-01
    “…It is connected with potential use of these materials in flexible optoelectronic devices of visible and THz range. In this paper the parameters of generation of terahertz field from the surface of bulk layered crystal and monolayer film of tungsten diselenide are analyzed. …”
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  7. 667

    Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si by Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel, Ross Anthony, Manu Hedge, Sophie E. Bierer, Sunzhuoran Wang, Andrew P. Knights, Ryan B. Lewis

    Published 2025-02-01
    “…While diode lasers on group III‐V platforms have long‐powered internet data communications and other optoelectronic technologies, direct integration with Si remains problematic. …”
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  15. 675

    High‐stability two‐dimensional perovskite LaNb2O7 for high‐performance wide‐temperature (80–780 K) UV light detection and human motion detection by Yong Zhang, Jian Yao, Lin Wang, Long Chen, Junyi Du, Pin Zhao, Qing Guo, Zhen Zhang, Lixing Kang, Xiaosheng Fang

    Published 2025-01-01
    “…Halide perovskites have shown exceptional optoelectronic properties but poor stability. Conversely, oxide perovskites exhibit exceptional stability, yet hardly achieve their high photoelectric performances. …”
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  16. 676

    Development Features of the FSES for Tiered and Continuous Higher Education by A. I. Altukhov, M. A. Skvaznikov, A. A. Shekhonin

    Published 2020-03-01
    “…The article substantiates the expansion of the scope of professional use of a specialist in the field of electronic and optoelectronic devices and systems and the need to introduce a new – information-analytical type of activity. based on the developed competency models of the results of mastering the educational programs of graduate, undergraduate and specialty studies, a comparative analysis of their orientation in various fields of activity is carried out. …”
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    Article
  17. 677

    Supramolecular Assembly and Reversible Transition and of Chitosan Fluorescent Micelles by Noncovalent Modulation by An Liu, Hong Song, Puyou Jia, Ying Lin, Qingping Song, Jiangang Gao

    Published 2021-01-01
    “…This study provides novel multifunctional materials that are of great importance for their potential application in the fields of optoelectronic devices and chemical and biomedical sensors.…”
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  18. 678

    Epitaxial growth of transition metal nitrides by reactive sputtering by Florian Hörich, Christopher Lüttich, Jona Grümbel, Jürgen Bläsing, Martin Feneberg, Armin Dadgar, Rüdiger Goldhahn, André Strittmatter

    Published 2025-01-01
    “…Implementing transition metal nitride (TM-nitride) layers by epitaxy into group-III nitride semiconductor layer structures may solve substantial persisting problems for electronic and optoelectronic device configurations and subsequently enable new device classes in the favorable nitride semiconductor family. …”
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  19. 679

    Structural, electronic, mechanical, optical and magnetic properties of RhNbZ (Z = Li, Si, As) Half-Heusler compounds: a first-principles study by Adem Beriso Bejo, Megersa Wodajo Shura, Kumneger Tadele, Mesfin Asfaw Afrassa, Fekadu Tolessa Maremi

    Published 2025-01-01
    “…Results from these properties calculations reveal that both absorption coefficient and optical conductivity have maximum values whereas electron energy loss has minimum value in the lower energy ranges which show that the materials under our study can be considered as potential candidates for optoelectronic applications. From magnetic property calculations, RhNbSi is predicted to be nonmagnetic material but RhNbLi and RhNbAs have magnetic nature.…”
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  20. 680