Showing 461 - 480 results of 542 for search '"Optoelectronics"', query time: 0.06s Refine Results
  1. 461

    Characteristics of Nanocrystallite-CdS Produced by Low-Cost Electrochemical Technique for Thin Film Photovoltaic Application: The Influence of Deposition Voltage by Obi Kingsley Echendu, Francis Birhanu Dejene, Imyhamy Mudiy Dharmadasa, Francis Chukwuemeka Eze

    Published 2017-01-01
    “…The two-electrode system used provides a relatively simple and cost-effective approach for large-scale deposition of semiconductors for solar cell and other optoelectronic device application. Five CdS thin films were deposited for 45 minutes each at different cathodic deposition voltages in order to study their properties. …”
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  2. 462

    A comprehensive DFT/TDDFT investigation into the influence of electron acceptors on the photophysical properties of ullazine-based D-π-A-π-A photosensitizers by Jing Huang, Zihao Li, Lei Yang, Rongfang Hu, Guoyu Shi

    Published 2025-01-01
    “…Notably, HJ19 (A1 for BTD, A2 for CSSH) and HJ20 (A1 for difluorosubstituted BTD, A2 for CSSH) dyes demonstrate optimal optoelectronic properties, exhibiting redshifted absorption wavelengths by more than 79 nm and enhanced maximum absorption efficiencies by more than 40% with those of the YZ7 sensitizer.…”
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  3. 463

    Fluorescence Properties of Novel Multiresonant Indolocarbazole Derivatives for Deep-Blue OLEDs from Multiscale Computer Modelling by Nikita O. Dubinets, Andrey Yu. Sosorev

    Published 2025-01-01
    “…On the contrary, the addition of phenyls to another positions of the core is detrimental for optoelectronic properties. QM/MM and QM/EFP calculations yielded negligible inhomogeneous broadening of the emission spectrum of the studied luminophores when embedded as dopants in anthracene-based hosts, predicting high colour purity of the corresponding devices. …”
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  4. 464

    Optical time-lapsed in situ mechanochemical studies on metal halide perovskite systems by Yonghao Xiao, David G. Bradley, Wei Xin Chan, Xinwen Hu, Lian Xiao, Zhenpeng Liu, Zi Yang Tan, Xin Zhao, Chenfei Li, Mansour Sadek, Vikash Kumar Ravi, Ying Hern Tam, Xiaotao Wang, Felipe García, Handong Sun, Seow Chin Low, Poh Boon Phua, Tze Chien Sum, Xiuwen Zhou, Yee-Fun Lim, John V. Hanna, Han Sen Soo

    Published 2025-02-01
    “…Abstract Metal halide perovskites are attractive for optoelectronic applications, but the existing solution-based synthetic methods rely on hazardous solvents and lack reproducibility. …”
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    Customizing the optical, electronic and transport attributes of lead-free hybrid FASnBr3 perovskites triggered by spin-orbit coupling and strains by Nusrat Jahan, Farah B.H. Pritu, Md Rasidul Islam, Budrun Neher, M Mahbubur Rahman, Farid Ahmed

    Published 2025-01-01
    “…Due to their excellent optical and electronic properties, FASnBr3 perovskites are considered highly promising for lead-free optoelectronic applications like LEDs, solar panels, lasers, and optical detectors.…”
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  13. 473

    Colorimetric Detection of Dopamine Based on Peroxidase-like Activity of β-CD Functionalized AuNPs by Sara Anderson, Hamish Shepherd, Kiran Boggavarapu, Janak Paudyal

    Published 2025-01-01
    “…Because of easy preparation, excellent biocompatibility, and unique optoelectronic properties, gold nanoparticles (AuNPs) have attracted increasing attention in many fields, including nanozymes. …”
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  14. 474

    Terahertz generation from surface of the bulk and monolayer tungsten diselenide by D. I. Khusyainov, A. V. Gorbatova, A. M. Buryakov

    Published 2020-12-01
    “…It is connected with potential use of these materials in flexible optoelectronic devices of visible and THz range. In this paper the parameters of generation of terahertz field from the surface of bulk layered crystal and monolayer film of tungsten diselenide are analyzed. …”
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  15. 475

    Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si by Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel, Ross Anthony, Manu Hedge, Sophie E. Bierer, Sunzhuoran Wang, Andrew P. Knights, Ryan B. Lewis

    Published 2025-02-01
    “…While diode lasers on group III‐V platforms have long‐powered internet data communications and other optoelectronic technologies, direct integration with Si remains problematic. …”
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