Showing 361 - 380 results of 542 for search '"Optoelectronics"', query time: 0.04s Refine Results
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    Properties of Electrospun TiO2 Nanofibers by Bianca Caratão, Edgar Carneiro, Pedro Sá, Bernardo Almeida, Sandra Carvalho

    Published 2014-01-01
    “…The combination of good TiO2 properties with its high surface area leads these nanofibers into having a vast applicability such as cosmetics, scaffolds for tissue engineering, catalytic devices, sensors, solar cells, and optoelectronic devices. The structural and chemical properties of the prepared samples have been studied. …”
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  12. 372

    Dual-Wavelength Polarization Multifunction Metalens Based on Spatial Multiplexing by Xiangshuo Shang, Haiyang Huang, Yi Zhou, Jiaheng Gong, Yang Liu, Wei Li

    Published 2025-01-01
    “…The application of spatial multiplexing significantly enhanced the performance of the metalenses, providing a promising solution for efficient and compact optoelectronic devices.…”
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  13. 373

    Fabrication of Affordable and Sustainable Solar Cells Using NiO/TiO2 P-N Heterojunction by Kingsley O. Ukoba, Freddie L. Inambao, Andrew C. Eloka-Eboka

    Published 2018-01-01
    “…Metal oxide TiO2/NiO heterojunction solar cells were fabricated using the spray pyrolysis technique. The optoelectronic properties of the heterojunction were determined. …”
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    Structural, Electronic, Mechanical and Optical Properties of RhZrZ (Z = As, Sb) Half-Heusler Compounds: First-Principles Calculations by Adem Beriso Bejo, Megersa Wodajo Shura, Mesfin Asfaw Afrassa, Kumneger Tadele, Fekadu Tolessa Marem, Kunsa Haho Habura

    Published 2024-01-01
    “…Furthermore, the investigation of the optical properties reveals that there is a high absorption coefficient and low electron energy loss in visible and some ultraviolet energy spectrum indicating that these compounds are potential candidates for optoelectronic applications.…”
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  20. 380

    Electronic Properties of Sn- or Ge-Doped In2O3 Semiconductors by S. J. Wen, G. Campet

    Published 1993-01-01
    “…Most interestingly this study puts into light the enhanced carrier mobility occurring for Ge-doped In2O3 samples compared with ITO samples (Sn-doped In2O3 widely used in optoelectronic devices.…”
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