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Rotation symmetry mismatch and interlayer hybridization in MoS2-black phosphorus van der Waals heterostructures
Published 2025-01-01“…The underlying physics revealed by our results paves the way for innovative electronics and optoelectronics based on TMDs superlattices, adding further flexibility to the approaches adopted in twisted hexagonal superlattices.…”
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A Near-Ultraviolet Photodetector Based on the TaC: Cu/4 H Silicon Carbide Heterostructure
Published 2025-01-01“…Photodetectors (PDs) based on 4H silicon carbide (SiC) have garnered significant interest due to their exceptional optoelectronic properties. However, their photoresponse is typically restricted to the ultraviolet (UV) region, with limited light absorption beyond 380 nm, which constrains their utility in visible light detection applications. …”
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Liquid-based encapsulation for implantable bioelectronics across broad pH environments
Published 2025-01-01“…We also demonstrate the in vivo biocompatibility of our encapsulation approach and show that encapsulated wireless optoelectronics maintain robust operation throughout 3 months of implantation in freely moving mice. …”
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Athermal Tantalum Pentoxide Mach-Zehnder Interferometers Based on Structural Compensation Method
Published 2025-01-01Get full text
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Structural, magnetic, and optical characteristics of undoped and chromium, iron, cobalt, copper, and zinc doped nickel oxide nanopowders
Published 2025-01-01“…This observation suggests that the prepared NiO nanopowders have significant potential in both linear and nonlinear optical devices, optoelectronics, and data storage technologies.…”
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Gas-phase Formation of Large, Astronomically Relevant Polycyclic Aromatic Hydrocarbon Clusters
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Autonomous inverse encoding guides 4D nanoprinting for highly programmable shape morphing
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Magnetic field-induced synergistic therapy of cancer using magnetoplasmonic nanoplatform
Published 2025-02-01Get full text
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Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing
Published 2025-01-01“…InAs/GaAs quantum dots (QDs) appear promising for optoelectronic applications. However, the inhomogeneous broadening caused by natural strain and the non-uniform size distribution deteriorates the device performance based on multi-stacked QD layers. …”
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