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301
Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors
Published 2025-01-01“…Combined with the enhanced valence energy, reduced hole mass, and ultra‐wide bandgap, the β‐(RhxGa1‐x)2O3 can be candidate semiconductors for a new generation of power electronics, ultraviolet optoelectronics, and complementary metal‐oxide‐semiconductor (CMOS) technologies.…”
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302
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303
Submicrosecond Q-Switching Er-Doped All-Fiber Ring Laser Based on Black Phosphorus
Published 2017-01-01“…Black phosphorus (BP), a new two-dimensional (2D) material, has been deeply developed for extensive applications in electronics and optoelectronics due to its similar physical structure to graphene and thickness dependent direct band gap. …”
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304
Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells
Published 2012-01-01Get full text
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305
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ANALYSIS OF SURFACE DEFECTS OF ALUMINUM AND ITS ALLOYS WITH A SCANNING KELVIN PROBE
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307
Quantum size effects and tailoring the electron energy levels in semiconductors: comparison study on Al x Ga 1-x As and Ga x In 1-x As quantum wires
Published 2025-02-01“…Abstract The engineering of the architecture of the quantum wires has shown a real challenge in the scientific community owing to their fascinating and auspicious application potential in the field of optoelectronics. The modulation of the morphology and structure of the quantum wires may give rise to the modulation of the energy levels and band offset positions to enhance the charge carriers transfer through any electronic device and improve the overall performance for the future application in the field of spintronics and photonics. …”
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308
High-performance hysteresis-free perovskite transistors through anion engineering
Published 2022-04-01“…Abstract Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. …”
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309
Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method
Published 2025-02-01“…Our findings suggest that the GeO2 thin film is a candidate material for optoelectronic device applications and will provide a facile and innovative strategy to develop the solar-blind photodetector.…”
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310
Highly bright perovskite light-emitting diodes enabled by retarded Auger recombination
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311
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Ultraviolet-Enhanced Flat Supercontinuum Light Generated in Cascaded Photonic Crystal Fiber
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313
Site-specific substitution in atomically precise carboranethiol-protected nanoclusters and concomitant changes in electronic properties
Published 2025-01-01“…These results demonstrate a tunable platform for designing nanoclusters with tailored electronic properties, with implications for optoelectronics and catalysis.…”
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314
Green synthesis of biocompatible fluorescent carbon dots from bitter gourd for effective metal sensing and biological applications
Published 2025-02-01“…The synthesized C-dots have wide range of applications from metal sensing to bioimaging and optoelectronics. The antimicrobial properties of the prepared C-dots were also analyzed using Klebsiellapneumoniae and Staphylococcus aureus microbes and found that the prepared C-dots have better antimicrobial activity in both microbes with better efficiency due to its smaller size. …”
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315
Unraveling Abnormal Thermal Quenching of Sub‐Gap Emission in β‐Ga2O3
Published 2025-01-01“…The enhanced STEs emission with distinguished NTQ effect strengthens evidence that the stable polarons inherently limit the transport of holes in Ga2O3, and also support the potential of Ga2O3 materials for the development of UV optoelectronics.…”
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316
Nanoscale ultrafast dynamics in Bi2Te3 thin film by terahertz scanning near-field nanoscopy
Published 2025-02-01“…Summary: Ultrafast laser interactions with topological insulators (TIs) have garnered tremendous interest for understanding light-matter interactions and developing optoelectronic devices across visible to terahertz (THz) regions owning to their high carrier mobility and sensitivity to electric fields. …”
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317
Semiconductor Membrane Exfoliation: Technology and Application
Published 2025-01-01“…It is challenging to directly grow the foundational materials of optoelectronic devices, specifically semiconductor thin film structures, on flexible substrates. …”
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318
Metasurface higher-order poincaré sphere polarization detection clock
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319
Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy
Published 2012-01-01“…The results have indicated that the core-shell structure is indispensable for surface passivation and practical use of nanowire optoelectronics devices.…”
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320
SSVEP Enhancement in Mixed Reality Environment for Brain–Computer Interfaces
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