Memory State Dynamics in BEOL FeFETs: Impact of Area Ratio on Analog Write Mechanisms and Charging by Hannes Dahlberg, Oscar Kaatranen, Karl-Magnus Persson, Arto Rantala, Jacek Flak, Lars-Erik Wernersson

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DaLAMED: A Clock-Frequency and Data-Lifetime-Aware Methodology for Energy-Efficient Memory Design in Edge Devices by Belal Jahannia, Abdolah Amirany, Elham Heidari, Hamed Dalir

Subjects: “…Emerging non-volatile memory…”
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A BaTiO3-based flexible ferroelectric capacitor for non-volatile memories by Xingpeng Liu, Chunshu Wei, Tangyou Sun, Fabi Zhang, Haiou Li, Linsheng Liu, Ying Peng, Hezhang Li, Min Hong

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Ferroelectric memory: state-of-the-art manufacturing and research by D. A. Abdullaev, R. A. Milovanov, R. L. Volkov, N. I. Borgardt, A. N. Lantsev, K. A. Vorotilov, A. S. Sigov

Subjects: “…non-volatile memory…”
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Improving Linearity and Symmetry of Synaptic Update Characteristics and Retentivity of Synaptic States of the Domain-Wall Device Through Addition of Edge Notches by Raman Hissariya, Debanjan Bhowmik

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