Roles of doping in enhancing the performance of graphene/graphene-like semiconductors by Yuqi Zhou, Xinbo He, Mengyang Li

“…However, graphene is intrinsically a zero-bandgap material, limiting its development in the field of flexible nanoelectronics. To expand the range of applications for graphene in electronic devices, it is crucial to develop the strategies for inducing a bandgap. …”
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Topological indices and their correlation with structural properties of carbon nanotube Y-junctions by Khawlah Alhulwah, Ali N.A. Koam, Nasreen Almohanna, Muhammad Faisal Nadeem, Ali Ahmad

“…Among the various types, Y-junctions, in which a single CNT splits into a Y-shaped structure, have particular importance in nanoelectronics and logic devices due to their special structural and electronic properties. …”
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Metal Oxide Nanomaterials as Rice Transgenic Carriers by Xiangbo Yang, Xia Bai, Zhenkai Zhang, Xiaoming Yu

“…Due to their special structure and a series of unique properties, nano-metal oxide materials are widely used in nanoelectronics, catalysis, environmental monitoring, electrochemical sensors, and many other fields. …”
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A Novel Chaotic System without Equilibrium: Dynamics, Synchronization, and Circuit Realization by Ahmad Taher Azar, Christos Volos, Nikolaos A. Gerodimos, George S. Tombras, Viet-Thanh Pham, Ahmed G. Radwan, Sundarapandian Vaidyanathan, Adel Ouannas, Jesus M. Munoz-Pacheco

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Optimizing multiprocessor performance in real-time systems using an innovative genetic algorithm approach by Heba E. Hassan, Khaled Hosny Ibrahiem, Ahmed H. Madian

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Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS₂ Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments by Khalil Tamersit, Abdellah Kouzou, José Rodriguez, Mohamed Abdelrahem

“…These findings position the GAA-VGD TMD FET as a promising candidate for advanced radiation-hardened nanoelectronics.…”
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Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design by Mathan Natarajamoorthy, Jayashri Subbiah, Nurul Ezaila Alias, Michael Loong Peng Tan

“…The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. …”
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Manipulation of MWCNT Concentration in MWCNT/TiO2 Nanocomposite Thin Films for Dye-Sensitized Solar Cell by Huda Abdullah, Mohd Zikri Razali, Sahbudin Shaari, Mohd Raihan Taha

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A Review on Frequency Compensation and Transient Enhancement Schemes of Flipped Voltage Follower LDO Regulators for SoC Applications by P. Manikandan, B. Bindu

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Unveiling polyoxometalate redox properties at the nanoscale by Volatron, Florence, Izzet, Guillaume, Vuillaume, Dominique,  Proust, Anna

“…As the missing link between extended oxides, commonly found in microelectronics, and conventional organic or organometallic molecules, POMs have attracted ever-increasing interest in the field of nanoelectronics. They hold promise as charge storage nodes in multilevel nonvolatile memories and resistive switching devices, areas of interest currently boosted by the development of neuromorphic computing. …”
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Nitrogen-carbon nanotubes as a basis for a new type of semiconductor materials for electronics devices by Irina V. Zaporotskova, Sergey V. Boroznin, Natalia P. Boroznina, Evgeniy S. Dryuchkov, Kseniya Yu. Verevkina, Yulia V Butenko, Pavel A. Zaporotskov, Lev V. Kozhitov, Alena V. Popkova, Aleksandr D. Grigoriev

“…The results are of utmost importance for the design and fabrication of components and units for nanoelectronics and microsystems: our theoretical study has confirmed the possibility to control the refraction index and conductivity of media by implementing a carbon-for-nitrogen substitution reaction to various concentrations. …”
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Characterization of Waste Material Derived Willemite-Based Glass-Ceramics Doped with Erbium by G. V. Sarrigani, H. J. Quah, W. F. Lim, K. A. Matori, N. S. Mohd Razali, A. Kharazmi, M. Hashim, H. R. Bahari

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The Application of Supervised Machine Learning Algorithms for Image Alignment in Multi-Channel Imaging Systems by Kyrylo Romanenko, Yevgen Oberemok, Ivan Syniavskyi, Natalia Bezugla, Pawel Komada, Mykhailo Bezuglyi

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Metrological studies of the characteristics of multilayer surface coatings using synchrotron radiation by A. S. Sigov, O. A. Minaeva, S. I. Anevsky, A. M. Lebedev, R. V. Minaev

“…It plays an important role in nanoelectronics metrological base. The main research were carried out at electron storage rings «Siberia-1» (Kurchatov Institute) and MLS (PTB, Berlin) with low electron energy, in a wide wavelength range, including visible range, AUV, VU, EUV and to exclude the X-ray radiation influence. …”
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Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach by Sungjoo Song, Jong-Hyun Kim, Jongyoun Park, Seung-Hwan Kim, Dongjin Ko, Hyejung Choi, Seiyon Kim, Hyun-Yong Yu

“…The engineering of Schottky barrier height (SBH) at source/drain (S/D) contacts is a crucial technology in the next generation nanoelectronics. Recently, amorphous indium gallium zinc oxide (a-IGZO) has gained prominence for its application to stackable 3-dimensional (3D) dynamic random-access memory (DRAM) due to its ultra-low off-current and low-temperature fabrication. …”
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A stable open-shell peri-hexacene with remarkable diradical character by Jinji Zhang, Xiaojing Fang, Weiwei Niu, Yiming Yu, Yanlin Hu, Jiawen Sun, Ying Xu, Zhihua Zhou, Heyuan Liu, Xiaonan Fan, Baishu Zheng, Qing Jiang, Guangwu Li, Wangdong Zeng

“…Abstract [n]Peri-acenes ([n]PA) have attracted great interest as promising candidates for nanoelectronics and spintronics. However, the synthesis of large [n]PA (n > 4) is extremely challenging due to their intrinsic open-shell radical character and high reactivity. …”
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Rainwater and fog harvesting from solar panels by I. Alazzam, K. Shatanawi, R. Al-Weshah

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Oxygen vacancy-driven spin-transfer torque across MgO magnetic tunnel junctions by L. M. Kandpal, B. Taudul, E. Monteblanco, A. Kumar, K. Katcko, F. Schleicher, P. Gupta, S. Boukari, W. Weber, V. Da Costa, J. D. Costa, T. Bӧhnert, R. Ferreira, P. Freitas, M. Hehn, M. Alouani, P. K. Muduli, D. Lacour, M. Bowen

“…This should disrupt the status-quo on STT-MRAM R&D, by generating defect-specific research and new ideas to confer additional functionality to these next-generation electronic devices, as a nanoelectronics platform to industrialize quantum physics.…”
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Demonstration of high-reconfigurability and low-power strong physical unclonable function empowered by FeFET cycle-to-cycle variation and charge-domain computing by Taixin Li, Xinrui Guo, Franz Müller, Sukhrob Abdulazhanov, Xiaoyang Ma, Hongtao Zhong, Yongpan Liu, Vijaykrishnan Narayanan, Huazhong Yang, Kai Ni, Thomas Kämpfe, Xueqing Li

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Electrolyte design for reversible zinc metal chemistry by Bao Zhang, Jia Yao, Chao Wu, Yuanjian Li, Jia Liu, Jiaqi Wang, Tao Xiao, Tao Zhang, Daqian Cai, Jiawen Wu, Zhi Wei Seh, Shibo Xi, Hao Wang, Wei Sun, Houzhao Wan, Hong Jin Fan

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