Non-volatile voltage-controlled magnetization in single-phase multiferroic ceramics at room temperature by Zimeng Hu, Gavin B.G. Stenning, Hangfeng Zhang, Yu Shi, Vladimir Koval, Wanting Hu, Zhiyong Zhou, Chenglong Jia, Isaac Abrahams, Haixue Yan

Subjects: “…Multiferroics…”
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Magnetically tailored dielectric behaviour of (1-x)Ba0.98Sm0.02TiO3-xBa0.7Sr0.3Fe12O19 ceramic composites by Kaur Arshdeep, Nindrayog Amritpal Singh, Masih Sajan, Middha Shiffali, Kaur Shubhpreet, Kumar Sunil, Ghosh Rubina, Vishwakarma Prakash Nath, Arya Nisharika, Singh Satvir, Tandon Nitin, Sharma Indu, Arora ishal, Paul Surinder, Singh Mandeep, Chopra Vibha, Singh Anupinder

Subjects: “…multiferroics…”
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Mutual control of electric and magnetic orders near room temperature in Al doped Y-type hexaferrite single crystals by Pengzheng Li, Mengfang Yu, Lin Yang, Qiutian Duan, Yinchen Wu, Aihua Zhang, Min Zeng, Meifeng Liu, Xingsen Gao

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Phase Composition, Surface Morphology, and Dielectric Properties of Poly(Vinylidene Fluoride)–Cobalt Ferrite Composite Films Depending on Thickness by Pavel A. Vorontsov, Vitalii D. Salnikov, Valerii V. Savin, Stanislav A. Vorontsov, Alexander S. Omelyanchik, Petr V. Shvets, Larissa V. Panina, Petr A. Ershov, Valeria V. Rodionova

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THEORETICAL STUDIES ON THE MAGNETIC, ELECTRICAL, AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC Ba(Zr\(_{0.2}\)Ti\(_{0.8}\)O\(_3\))  MATERIALS WITH MANGANESE DOPING by Tien Lam Vu, Hoang Thoan Nguyen, Huu Lam Nguyen, Ngoc Trung Nguyen, Quoc Van Duong, Duc Dung Dang

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Guanine-based spin valve with spin rectification effect for an artificial memory element by Nicusor Iacob, Cristina Chirila, Mama Sangaré, Andrei Kuncser, Anda E. Stanciu, Marcela Socol, Catalin C. Negrila, Mihaela Botea, Claudiu Locovei, Gabriel Schinteie, Aurelian C. Galca, Anca Stanculescu, Lucian Pintilie, Victor Kuncser, Bogdana Borca

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Sintering-induced multiferroicity in 0.93(NaBi)TiO3–0.07BaTiO3 ceramics by Hongbo Liu, Jianguo Chen

Subjects: “…Multiferroic…”
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Flat-band based high-temperature ferromagnetic semiconducting state in the graphitic C4N3 monolayer by Chaoyu He, Yujie Liao, Tao Ouyang, Huimin Zhang, Hongjun Xiang, Jianxin Zhong

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