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  1. 1
    Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si

    Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si by Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel, Ross Anthony, Manu Hedge, Sophie E. Bierer, Sunzhuoran Wang, Andrew P. Knights, Ryan B. Lewis

    Published 2025-02-01
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  2. 2
    In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells

    In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells by Ewa Grzanka, Sondes Bauer, Artur Lachowski, Szymon Grzanka, Robert Czernecki, Byeongchan So, Tilo Baumbach, Mike Leszczyński

    Published 2025-01-01
    Subjects: “…MOVPE…”
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