An improved SiC SWITCH‐MOS with superior forward performance by Junji Cheng, Tao Zhong, Huan Li, Ping Li, Bo Yi, Haimeng Huang, Siliang Wang, Qiang Hu, Hongqiang Yang

Subjects: “…MOSFET…”
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Novel Insights Into Load Current Control Using Power MOSFET by Huy Hung Nguyen, Quoc Minh Lam, Minh Nhat Huynh, Trong Trung Nguyen, Van Tu Duong, Tan Tien Nguyen

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Circuit-Specific and Technology-Independent Criterion for Selection of Power MOSFETs That Minimize Energy Dissipation by Vikas Joshi, Utkarsh Jadli, Peyush Pande, Mayank Chaturvedi, Daniel Haasmann, Sima Dimitrijev

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Bipolar to unipolar conversion in superjunction MOSFETs during resonant switching by H. Kang, F. Udrea

Subjects: “…Power mosfet…”
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Thermal behavior and switching losses of MOSFET in high-frequency transformer circuits by Jiale Cheng, Yinghao Zhang, Xiangqun Cheng, Kaixin Guo, Yuchen Wang, Mian Jiang, Yabin Wang, Yang Liu

Subjects: “…Thermal behavior of MOSFET…”
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Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kV SiC MOSFETs Across Multiple Vendors and Generations by Shahid Makhdoom, Na Ren, Ce Wang, Chaobiao Lin, Yiding Wu, Kuang Sheng

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SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance by Zhiyu Wang, Hongshen Wang, Yuanjie Zhou, Qian Liu, Hao Wu, Jian Shen, Juan Luo, Shengdong Hu

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Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET by Mengyuan Yu, Yi Shen, Hongping Ma, Qingchun Zhang

Subjects: “…SiC MOSFET…”
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On the Sensitivity of the Tunneling Current to Electric Field in a MOSFET with Two Gates by M. A. Grado-Caffaro, M. Grado-Caffaro

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Graphene nanoribbon FET technology‐based OTA for optimizing fast and energy‐efficient electronics for IoT application: Next‐generation circuit design by Faraz Hashmi, M Nizamuddin, Mohammad Aleem Farshori, Syed Umar Amin, Zafar Iqbal Khan

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Strategic Review of Arsenide, Phosphide and Nitride MOSFETs by Gourab Dutta, Palash Das, Partha Mukherjee, Dhrubes Biswas

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Comparative Analysis of CNTFET and CMOS Logic based Arithmetic Logic Unit by K.В Nehru, T.В Nagarjuna, G.В Vijay

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High-temperature Reliability of 1 200 V SiC Power MOSFETs by DENG Xiaochuan, CHEN Xixi, WANG Yiyu, SHEN Huajun, TANG Yachao, GAO Yunbing

Subjects: “…SiC MOSFET…”
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On the Implementation of “Dead Time” in a Synchronous Step-Down Converter by Hristo Antchev, Dimitar Borisov

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A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation by A. El Abbassi, Y. Amhouche, K. Raïs, R. Rmaily

Subjects: “…MOSFET…”
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Turn-off Characteristics of MOSFET and IGBT and Its Influence on Parallel Connection by Helong LI, Lijian DING, Guoyou LIU

Subjects: “…MOSFET…”
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Gate driver, snubber and circuit design considerations for fast‐switching series‐connected SiC MOSFETs by Tobias Nieckula Ubostad, Dimosthenis Peftitsis

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Impact of the Schottky Barrier Height on the Carrier Velocity Overshoot Behaviors in SOI nMOSFETs With Metal Source/Drain by Rui Su, Yan Jing, Xinyi Zhang, Yi Jiang, Dawei Gao, Walter Schwarzenbach, Bich-Yen Nguyen, Junkang Li, John Robertson, Rui Zhang

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Boron as a passivating dopant of oxygen-vacancy-induced hole traps at GaN/SiO2 interface by Yuansheng Zhao, Atsushi Oshiyama, Kenji Shiraishi

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Electrical model of the 90 nm MOSFET by A. M. Borovik, V. T. Khanko, V. R. Stempitsky

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