Libertas as an Expression of Roman Identity in Cicero and Sallust by Anna Iacoboni

Subjects: “…mos maiorum…”
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Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Mod... by Yadong Liu, Siyue Zhao, Lijuan You, Yong Xu, Renjun Si, Shunping Zhang

Subjects: “…MOS sensor…”
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New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature by Y. Amhouche, A. El Abbassi, K. Raïs, E. Bendada, R. Rmaily

Subjects: “…MOS transistor…”
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Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing by Mohammed Tanvir Quddus, Alvaro D. Latorre-Rey, Zeinab Ramezani, Mihir Mudholkar

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Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors by A. El Abbassi, Y. Amhouche, E. Bendada, R. Rmaily, K. Raïs

Subjects: “…MOS Transistor…”
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Synergetic Phase Modulation and N‐Doping of MoS2 for Highly Sensitive Flexible NO2 Sensors by Jiyun Kim, Mengyao Li, Chun‐Ho Lin, Long Hu, Tao Wan, Ayad Saeed, Peiyuan Guan, Zijian Feng, Tushar Kumeria, Jianbo Tang, Dawei Su, Tom Wu, Dewei Chu

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MoS₂–Plasmonic Hybrid Platforms: Next-Generation Tools for Biological Applications by Nayra A. M. Moussa, Seungah Lee, Seong Ho Kang

Subjects: “…MoS₂–plasmonic hybrids…”
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Some Considerations on Tunneling Losses in Field-Effect Devices for Low-Voltage Microcontrollers by M. A. Grado-Caffaro, M. Grado-Caffaro

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Single-qubit anisotropy induced by micromagnet in Si-MOS quantum dot by Ning Chu, Xin Zhang, Rong-Long Ma, Zhen-Zhen Kong, Wei-Zhu Liao, Sheng-Kai Zhu, Chu Wang, Ao-Ran Li, Gui-Lei Wang, Gang Cao, Hai-Ou Li, Guo-Ping Guo

Subjects: “…Si-MOS…”
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Performance of iopamidol degradation by MoS2@Fe3O4 Fenton-like system by LI Hao, SHI Nan, WU Daoji, FU Kaifang, LUO Congwei

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Adhesion-induced MoS2 layer transfer via in-situ TEM-nanoindentation: Effects of curvature and substrate mediated residual stress by Jhih H. Liang, Mehdi Rouhani, J. David Schall, Takaaki Sato, Christopher Muratore, Nicholas R. Glavin, Robert W. Carpick, Yeau-Ren Jeng

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Effects of the interface structure on the mechanical and tribological properties of the MoS2/CuCr composites by Chao Guo, Hongqu Jiang, Yuan Luo, Haijun Wu, Qi Zhao, Xingxia Yang, Caiju Li, Jianhong Yi, Yichun Liu

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Stable Field Emission from Layered MoS2 Nanosheets in High Vacuum and Observation of 1/f Noise by Ranjit V. Kashid, Pracheetee D. Joag, M. Thripuranthaka, Chandra S. Rout, Dattatray J. Late, Mahendra A. More

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Effect of Clip Characteristics on Thermal Performance of Dr.MOS Packages by Hao-Lin Yen, Fang-I Lai

Subjects: “…Dr.MOS package thermal performance…”
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Design of Shadow Filter Using Low-Voltage Multiple-Input Operational Transconductance Amplifiers by Montree Kumngern, Fabian Khateb, Tomasz Kulej, Natchayathorn Wattikornsirikul

Subjects: “…multiple-input bulk-driven MOS transistor…”
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In Situ TEM Study of Electrical Property and Mechanical Deformation in MoS₂/Graphene Heterostructures by Suresh Giri, Subash Sharma, Rakesh D. Mahyavanshi, Golap Kalita, Yong Yang, Masaki Tanemura

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Effectiveness of an E-Nose Based on Metal Oxide Semiconductor Sensors for Coffee Quality Assessment by Yhan S. Mutz, Samara Mafra Maroum, Leticia L. G. Tessaro, Natália de Oliveira Souza, Mikaela Martins de Bem, Loyane Silvestre Alves, Luisa Pereira Figueiredo, Denes K. A. do Rosario, Patricia C. Bernardes, Cleiton Antônio Nunes

Subjects: “…MOS…”
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SPR Biosensor Based on Bilayer MoS₂ for SARS-CoV-2 Sensing by Talia Tene, Stefano Bellucci, Cristian Vacacela Gomez

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Enhanced Friction and Wear Properties of TiN/MoS₂ Composite Coating on the Surface of Plasma Nitrided Ti6Al4V Alloy by Hongyu Li, Kai Le, Ganggang Wang, Zhenghao Ren, Yuzhen Liu, Zhenglong Yang, Liwei Zheng, Shusheng Xu

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Voltage Reference and Voltage Regulator for the Cryogenic Performance Evaluation of the 22nm FDSOI Technology by Alfonso R. Cabrera-Galicia, Arun Ashok, Patrick Vliex, Andre Kruth, Andre Zambanini, Stefan van Waasen

Subjects: “…metal-oxide-semiconductor (MOS)…”
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