Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD by K. F. Yarn, W. C. Chien, C. L. Lin, C. I. Liao

“…In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented GaAs (1 0 0) substrates with 10 degree towards (1 1 1)A. …”
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Comprehension of Postmetallization Annealed MOCVD-TiO2 on (NH4)2S Treated III-V Semiconductors by Ming-Kwei Lee, Chih-Feng Yen

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Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD by Long Giang Bach, Nam Giang Nguyen, Van Thi Thanh Ho

“…These results could develop the potential way to fabricate TCO based ZnO thin film using MOCVD or sputtering techniques by depositing a low temperature ZnO layer to serve as a template for high temperature GZO film growth. …”
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MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application by Amornrat Limmanee, Patipan Krudtad, Sasiwimon Songtrai, Suttinan Jaroensathainchok, Taweewat Krajangsang, Jaran Sritharathikhun, Kobsak Sriprapha

“…We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. …”
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Mosaic Structure of GaN Film Grown on Sapphire Substrate by AP-MOCVD: Impact of Thermal Annealing on the Tilt and Twist Angles by J. Laifi, M. F. Hasaneen, H. Bouazizi, Fatimah Hafiz Alsahli, T. A. Lafford, A. Bchetnia

“…A GaN layer with a thickness of 2 µm was grown on a sapphire substrate using atmospheric pressure metal–organic chemical vapor deposition (AP-MOCVD). Subsequently, the layer was annealed under a nitrogen atmosphere at temperatures ranging from 1000 °C to 1120 °C. …”
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13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD by Richard Brown, Chen Liu, George Seager, Francisco Alvarado, Ka Ming Wong, Adam P. Craig, Richard Beanland, Andrew R. J. Marshall, J. Iwan Davies, Qiang Li

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Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping by Tariq Jamil, Abdullah Al Mamun Mazumder, Mafruda Rahman, Muhammad Ali, Jingyu Lin, Hongxing Jiang, Grigory Simin, Asif Khan

Subjects: “…pulsed MOCVD…”
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Room Temperature Terahertz and Frequency Combs Based on Intersubband Quantum Cascade Laser Diodes: History and Future by Manijeh Razeghi, Quanyong Lu

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Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire by Yueh-Han Chuang, Fu-Gow Tarntair, Tzu-Wei Wang, Anoop Kumar Singh, Po-Liang Liu, Dong-Sing Wuu, Hao-Chung Kuo, Xiuling Li, Ray-Hua Horng

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Monometallic Pd and Pt and Bimetallic Pd-Pt/Al2O3-TiO2 for the HDS of DBT: Effect of the Pd and Pt Incorporation Method by Reynaldo Martínez Guerrero, Agileo Hernández-Gordillo, Víctor Santes, Jorge Roberto Vargas García, José Escobar, Leonardo Díaz-García, Lucía Díaz Barriga Arceo, Vicente Garibay Febles

“…The synthesis was accomplished using three methods: (A) impregnation, (B) metal organic chemical vapor deposition (MOCVD), and (C) impregnation-MOCVD. The bimetallic Pd-Pt catalyst prepared by the impregnation-MOCVD method was most active for the HDS of DBT compared to those prepared by the single impregnation or MOCVD method due to the synergetic effect between both noble metals. …”
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Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications by Tevye Kuykendall, Shaul Aloni, Ilan Jen-La Plante, Taleb Mokari

“…We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. …”
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High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure by Zhiming Li, Jinping Li, Haiying Jiang, Yanbin Han, Yingjie Xia, Yimei Huang, Jianqin Yin, Shigang Hu

“…The highly conductance of Mg-doped Al0.3Ga0.7N layer using low-pressure metal organic chemical vapour deposition (MOCVD) on Al0.4Ga0.6N/AlN superlattice structure was reported. …”
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