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    Optical Properties of One-Dimensional Structured GaN:Mn Fabricated by a Chemical Vapor Deposition Method by Sang-Wook Ui, In-Seok Choi, Sung-Churl Choi

    Published 2013-01-01
    “…Major developments in wide band gap III–V nitride semiconductors have recently led to the commercial production of high-temperature, high-power electronic devices, light-emitting diodes (LEDs), and laser diodes (LDs). In this study, GaN nanowires were grown on horizontal reactors by chemical vapor deposition (CVD) employing a vapor-solid mechanism. …”
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