Radio- and Power-Over-Fiber Integration for 6G Networks: Challenges and Future Prospects by Leticia Carneiro de Souza, Victoria Dala Pegorara Souto, Arismar Cerqueira Sodre

“…Furthermore, we discuss the underlying principles of PoF systems, including operation and key components, e.g., high-power laser diode (HPLD), optical fiber, and photovoltaic power converter (PPC), highlighting their key features, performance metrics, and design considerations. …”
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High-Energy Burst-Mode 3.5 μm MIR KTA-OPO by Haowen Guo, Chunyan Jia, Shuai Ye, Yongping Yao, Tiejun Ma, Jiayu Zhang, Meng Bai, Jinbao Xia, Hongkun Nie, Bo Yao, Jingliang He, Baitao Zhang

“…Utilizing a quasi-continuous wave (QCW) laser diode (LD) side-pump module and electro-optic (EO) Q-switching technique, a high beam quality 1064 nm burst-mode laser was achieved as the fundamental source, generating 30 mJ high-energy pulses at burst repetition rates of 100 Hz and 200 Hz with sub-burst repetition rates of 20 kHz, 40 kHz, and 50 kHz. …”
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High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design by Juntian Cao, Chengao Yang, Yihang Chen, Hongguang Yu, Jianmei Shi, Haoran Wen, Zhengqi Geng, Zhiyuan Wang, Hao Tan, Yu Zhang, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu

“…We reported on a single-longitudinal-mode operated distributed Bragg reflector laser diode emitting at 1950 nm with an on-chip integrated power amplifier. …”
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Electronically Coupled Heterojunctions Based on Graphene and Cu2−xS Nanocrystals: The Effect of the Surface Ligand by Ju Y. Shang, Mariangela Giancaspro, Adriana Grandolfo, Rafique A. Lakho, Elisabetta Fanizza, Suraj K. Patel, Giuseppe Valerio Bianco, Marinella Striccoli, Chiara Ingrosso, Oscar Vazquez-Mena, M. Lucia Curri

“…The photoresponse of two hybrid devices based on three layers of Cu₂₋_xS NCs, deposited in one case on SLG/Cu_2−xS/TBAI (“TBAI-only” device) and in the other on SLG/Cu_2−xS/DMBT (“DMBT + TBAI” device), with a TBAI treatment applied, for both, after each layer deposition, has been evaluated under 450 nm laser diode illumination. The results indicate that the TBAI-only device exhibited a significant increase in photocurrent (4 μA), with high responsivity (40 mA/W) and fast response times (<1 s), while the DMBT + TBAI device had lower photocurrent (0.2 μA) and responsivity (2.4 μA), despite similar response speeds. …”
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Porosity and Joule heating effects in chemically reactive peristaltically driven motion of Alumina-Ethylene glycol-Water nanofluid by S. Farooq, S. Ravikumar, S. Khalid, Hala H. Abd El-Gawad, Khalid Abdulkhaliq M. Alharbi

“…., nuclear, chemical, mechanical and medical) processes likely during heat exchange in heat exchangers, in boiling and cooling of devices, micro-electromechanical devices, in cooling of automobile engine, in arrays of laser diode, in various medicines and surgeries performed through laser technology attain much attention by the researchers. …”
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Investigating the effect of incident intensity on single-junction GaAs PV cells conversion efficiency at different temperatures by Junyue Zhang, Shunhua Wu, Jiachen Liu, Weizhou Huang, Lei Ling, Qingkai Meng, Rui Zhang, Lang Chen, Jiachen Zhang, Zhenfu Wang, Te Li

“…This study investigated the optimal operational parameters of single-junction gallium arsenide (GaAs) photovoltaic (PV) cells under laser diode irradiation to enhance the efficiency of LPT systems. …”
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Long-term stable laser injection locking for quasi-CW applications by Florian Kiesel, Kirill Karpov, Alexandre De Martino, Jonas Auch, Christian Gross

“…Commonly, injection locking of high-power semiconductor laser diodes are used for this purpose. However, for many laser diodes it is very challenging to achieve stable operation of the injection locked state due to a complex interplay of non-linearities and thermal effects. …”
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Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers by Moustafa Ahmed

“…This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). …”
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Highly bright perovskite light-emitting diodes enabled by retarded Auger recombination by Zhiqi Li, Qi Wei, Yu Wang, Cong Tao, Yatao Zou, Xiaowang Liu, Ziwei Li, Zhongbin Wu, Mingjie Li, Wenbin Guo, Gang Li, Weidong Xu, Feng Gao

“…Our findings shed light on a promising future for perovskite emitters in high-power light-emitting applications, including laser diodes.…”
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Optical Properties of One-Dimensional Structured GaN:Mn Fabricated by a Chemical Vapor Deposition Method by Sang-Wook Ui, In-Seok Choi, Sung-Churl Choi

“…Major developments in wide band gap III–V nitride semiconductors have recently led to the commercial production of high-temperature, high-power electronic devices, light-emitting diodes (LEDs), and laser diodes (LDs). In this study, GaN nanowires were grown on horizontal reactors by chemical vapor deposition (CVD) employing a vapor-solid mechanism. …”
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Free-space optical spiking neural network. by Reyhane Ahmadi, Amirreza Ahmadnejad, Somayyeh Koohi

“…Moreover, we utilize highly efficient, compact semiconductor laser diodes and develop novel cooling strategies to minimize power consumption and footprint.…”
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