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    Influence of variation in indium concentration and temperature on the threshold current density in InxGa1-xAs/GaAs QD laser diodes

    Influence of variation in indium concentration and temperature on the threshold current density in InxGa1-xAs/GaAs QD laser diodes by Zainab M. Alharbi, M.S. Al-Ghamdi

    Published 2025-01-01
    Subjects: “…InxGa1-xAs/GaAs QD laser diode…”
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