Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm² by Jialun Li, Renqiang Zhu, Ka Ming Wong, Kei May Lau

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A new discrete GaN-based dv/dt control circuit for megahertz frequency power converters by Bright K. Banzie, John K. Annan, Francis B. Effah

Subjects: “…GaN…”
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Chemically Engineered GaN Thin Films for Light‐Stimulated Artificial Synapses by Xiaoqin Yang, Jiawen Lu, Luyu Zhao, Xiaorui Han, Zhongwei Bai, Peiwen Quan, Liangshuai Xie, Liang Li, Haoxuan Sun, Mark Hermann Rummeli, Bingcheng Luo, Hong Gu

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Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S₂₂ and h₂₁: An Effective Machine Learning Approach by Zegen Zhu, Gianni Bosi, Antonio Raffo, Giovanni Crupi, Jialin Cai

Subjects: “…GaN HEMT…”
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Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates by Pieter Cardinael, Sachin Yadav, Bertrand Parvais, Jean-Pierre Raskin

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A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs by Yatexu Patel, Pouya Valizadeh

Subjects: “…InAlN/GaN…”
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Epitaxial growth of transition metal nitrides by reactive sputtering by Florian Hörich, Christopher Lüttich, Jona Grümbel, Jürgen Bläsing, Martin Feneberg, Armin Dadgar, Rüdiger Goldhahn, André Strittmatter

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Stability of GaN HEMT Device Under Static and Dynamic Gate Stress by Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu

Subjects: “…p-GaN HEMT…”
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Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs by An-Chen Liu, Hsin-Chu Chen, Po-Tsung Tu, Yan-Lin Chen, Yan-Chieh Chen, Po-Chun Yeh, Chih-I Wu, Shu-Tong Chang, Tsung-Sheng Kao, Hao-Chung Kuo

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Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities by Artem Bercha, Mikołaj Chlipała, Mateusz Hajdel, Grzegorz Muzioł, Marcin Siekacz, Henryk Turski, Witold Trzeciakowski

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Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs by Myeongsu Chae, Ho-Young Cha, Hyungtak Kim

Subjects: “…p-GaN gate HEMTs…”
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