An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement by Hanqi Gao, Jing Jin, Jianjun Zhou

“…IEEE Journal of the Electron Devices Society…”
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Enhancement and Expansion of the Neural Network-Based Compact Model Using a Binning Method by Jinyoung Choi, Hyunjoon Jeong, Sangmin Woo, Hyungmin Cho, Yohan Kim, Jeong-Taek Kong, Soyoung Kim

“…IEEE Journal of the Electron Devices Society…”
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Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise by Gerardo Malavena, Salvatore M. Amoroso, Andrew R. Brown, Plamen Asenov, Xi-Wei Lin, Victor Moroz, Mattia Giulianini, David Refaldi, Christian Monzio Compagnoni, Alessandro S. Spinelli

“…IEEE Journal of the Electron Devices Society…”
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The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET by Junghyeon Hwang, Giuk Kim, Hongrae Joh, Jinho Ahn, Sanghun Jeon

“…IEEE Journal of the Electron Devices Society…”
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Conductivity Enhancement of PVD-WS₂ Films Using Cl₂-Plasma Treatment Followed by Sulfur-Vapor Annealing by Keita Kurohara, Shinya Imai, Takuya Hamada, Tetsuya Tatsumi, Shigetaka Tomiya, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

“…IEEE Journal of the Electron Devices Society…”
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Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations by Stephen A. Mancini, Seung Yup Jang, Zeyu Chen, Dongyoung Kim, Alex Bialy, Balaji Raghotamacher, Michael Dudley, Nadeemullah Mahadik, Robert Stahlbush, Mowafak Al-Jassim, Woongje Sung

“…IEEE Journal of the Electron Devices Society…”
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A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States by Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Larissa Kuhberger, Daniel Popp, Johannes Aberl, Enrique Prado Navarrete, Moritz Brehm, Lilian Vogl, Peter Schweizer, Sebastian Lellig, Xavier Maeder, Masiar Sistani, Walter M. Weber

“…IEEE Journal of the Electron Devices Society…”
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Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells via Source/Drain Doping Engineering by Xuexiang Zhang, Qingkun Li, Lei Cao, Qingzhu Zhang, Renjie Jiang, Peng Wang, Jiaxin Yao, Huaxiang Yin

“…IEEE Journal of the Electron Devices Society…”
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A Trap-Assisted Photomultiplication-Type Organic Photodetector With High Detectivity From Visible to Shortwave Infrared Light by Jingwen Chen, Claire Qing-Ying Huang, Xin Zhang, Sheng Dong, Xiye Yang

“…IEEE Journal of the Electron Devices Society…”
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Wafer-Level Characterization and Monitoring Platform for Single-Photon Avalanche Diodes by Samuel Parent, Frederic Vachon, Valerie Gauthier, Steve Lamoureux, Alexandre Paquette, Jacob Deschamps, Tommy Rossignol, Nicolas Roy, Philippe Arsenault, Henri Dautet, Serge A. Charlebois, Jean-Francois Pratte

“…IEEE Journal of the Electron Devices Society…”
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High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications by Shuang Liu, Heyi Huang, Yanqing Li, Yadong Zhang, Feixiong Wang, Zhaohao Zhang, Qingzhu Zhang, Jiali Huo, Jiaxin Yao, Jing Wen, Huaxiang Yin

“…IEEE Journal of the Electron Devices Society…”
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Physics-Based Compact Model of Independent Dual-Gate BEOL-Transistors for Reliable Capacitorless Memory by Lihua Xu, Kaifei Chen, Zhi Li, Yue Zhao, Lingfei Wang, Ling Li

“…IEEE Journal of the Electron Devices Society…”
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A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation by Minxi Cai, Wei Zhong, Bei Liu, Piaorong Xu, Jing Cao

“…IEEE Journal of the Electron Devices Society…”
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Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs by Yunjiao Bao, Gangping Yan, Lei Cao, Chuqiao Niu, Qingkun Li, Guanqiao Sang, Lianlian Li, Yanzhao Wei, Xuexiang Zhang, Jie Luo, Yanyu Yang, Gaobo Xu, Huaxiang Yin

“…IEEE Journal of the Electron Devices Society…”
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A Comparative Study on the Effects of Planarity of Access Region on the Low-Frequency Noise Performance of InAlN/GaN HFETs by Yatexu Patel, Pouya Valizadeh

“…IEEE Journal of the Electron Devices Society…”
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Design and Analysis of a New High Step-Up Converter Using Switched-Inductor-Capacitor Voltage Multiplier Cells for Photovoltaic Application by Ramachandran Rajesh, Natarajan Prabaharan, Eklas Hossain

“…IEEE Journal of the Electron Devices Society…”
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Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors by Xhesila Xhafa, Ali Dogus Gungordu, Mustafa Berke Yelten

“…IEEE Journal of the Electron Devices Society…”
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Unsupervised Learning in a Ternary SNN Using STDP by Abhinav Gupta, Sneh Saurabh

“…IEEE Journal of the Electron Devices Society…”
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Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer by Boseong Son, Huijin Kim, Young-Woong Lee, Purusottam Reddy Bommireddy, Si-Hyun Park

“…IEEE Journal of the Electron Devices Society…”
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Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT Under Bias and Temperature Stress by Muhammad Aslam, Shu-Wei Chang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li, Wen-Hsi Lee

“…IEEE Journal of the Electron Devices Society…”
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