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    Experimental Comparison of HfO<sub>2/X</sub>-Based ReRAM Devices Switching Properties by the MIM Capacitance

    Experimental Comparison of HfO<sub>2/X</sub>-Based ReRAM Devices Switching Properties by the MIM Capacitance by Fernando Jose da Costa, Aseel Zeinati, Renan Trevisoli, Durga Misra, Rodrigo Trevisoli Doria

    Published 2024-01-01
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