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    Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste

    Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste by Shengqian Zhang, Yongsheng Ren, Xingwei Yang, Wenhui Ma, Hui Chen, Guoqiang Lv, Yun Lei, Yi Zeng, Zhengxing Wang, Bingxi Yu

    Published 2025-01-01
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