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    Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth

    Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth by Jiyao Du, Taofei Pu, Xiaobo Li, Liuan Li, Jinping Ao, Hongwei Gao

    Published 2025-01-01
    Subjects: “…GaN MOSFET…”
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