Adsorption Characteristics of an AlGaN/GaN Heterojunction on Potassium Ions by Yan Dong, Mengmeng Li, Yanli Liu, Jianming Lei, Haineng Bai, Yanmei Sun, Dunjun Chen, Dongjie Zhu, Rigao Wang, Yi Sun

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Electrothermal Failure Physics of GaN Schottky Diodes Under High-Temperature Forward Biasing by Nahid Sultan Al-Mamun, Yuxin Du, Jianan Song, Rongming Chu, Aman Haque

Subjects: “…GaN Schottky diode…”
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TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs by Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani

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Novel Bidirectional ESD Circuit for GaN HEMT by Pengfei Zhang, Cheng Yang, Jingyu Shen, Xiaorong Luo, Gaoqiang Deng, Shuxiang Sun, Yuxi Wei, Jie Wei

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Characterization and functionalization of ternary InGaN nanosurface towards energy storage system in solar cell basics: a molecular modelling study by F. Mollaamin

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Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT by Palash Das, Dhrubes Biswas

Subjects: “…AlGaN / GaN…”
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Physical Model Development for Fabricating MIS‐Anode‐Based 1100 V AlGaN/GaN‐Based Lateral Schottky Barrier Diodes Grown on Silicon Substrate with Low Leakage Current by Jingting He, Zhizhong Wang, Fuping Huang, Chunshuang Chu, Kangkai Tian, Shuting Cai, Yonghui Zhang, Xiaojuan Sun, Dabing Li, Xiaowei Sun, Zi‐Hui Zhang

Subjects: “…AlGaN/GaN SBDs…”
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High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{... by Jun-Hyeok Lee, Jeong-Min Ju, Gokhan Atmaca, Jeong-Gil Kim, Seung-Hyeon Kang, Yong Soo Lee, Sang-Heung Lee, Jong-Won Lim, Ho-Sang Kwon, Sefer Bora Lisesivdin, Jung-Hee Lee

Subjects: “…AlGaN/GaN…”
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Study on Optical Properties of Indium-Graded Semipolar InGaN/GaN Quantum Well by Fanming Zeng, Lihong Zhu, Wei Liu, Weicui Liu, Hongwei Wang, Baolin Liu

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Next generation of ICeGaNⓇ for superior no load and light load performance by Kalparupa Mukherjee, Jin Zhang, Kaspars Ledins, Carlos Toyos Bada, Nirmana Perera, Loizos Efthymiou, Sheung Wai Fung, Martin Arnold, Giorgia Longobardi, Florin Udrea

Subjects: “…GaN…”
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Visible Luminescence of the InGaN/GaN Ultraviolet Light-emitting Diodes 365 nm by V.P. Veleschuk, A.I. Vlasenko, Z.K. Vlasenko, D.N. Khmil’, O.M. Kamuz, I.V. Petrenko, V.P. Tartachnyk, A.V. Shulga, V.V. Borshch

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Temperature-Dependent Electrical Characteristics and Low-Frequency Noise Analysis of AlGaN/GaN HEMTs by Qiang Chen, Y. Q. Chen, Chang Liu, Zhiyuan He, Yuan Chen, K. W. Geng, Y. J. He, W. Y. Chen

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AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz by Toshihiro Ohki, Atsushi Yamada, Yuichi Minoura, Yusuke Kumazaki, Kenji Saito, Masaru Sato

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Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs by Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin

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Study on the Application of Gallium Nitride Transistors in Power Electronics by Renan R. Duarte, Guilherme F. Ferreira, Marco A. Dalla Costa, Carlos H. Barriquello, J. Marcos Alonso

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Optically pumped GaN-based vertical cavity surface emitting laser with strain-compensated AlGaN/InGaN distributed Bragg reflector by T. Kawashima, M. Kaminishi, C. Kimura, S. Sato

Subjects: “…GaN…”
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Defects Passivation and Performance Enhancement of AlGaN/GaN HEMTs by Supercritical Hydrogen Treatment by J. K. Lian, Y. Q. Chen, C. Liu, X. Y. Zhang

Subjects: “…AlGaN/GaN HEMTs…”
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High-Performance Semi-Polar InGaN&#x002F;GaN Green Micro Light-Emitting Diodes by Fei-Fan Xu, Tao Tao, Bin Liu, Xuan Wang, Mao-Gao Gong, Ting Zhi, Dan-Feng Pan, Zi-Li Xie, Yu-Gang Zhou, You-Dou Zheng, Rong Zhang

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Absorption Spectra of AlGaN/GaN Terahertz Plasmonic Crystals—Experimental Validation of Analytical Approach by Maksym Dub, Pavlo Sai, Pawel Prystawko, Wojciech Knap, Sergey Rumyantsev

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Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor by I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka

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