TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs by Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani

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Study of GaN Hall Effect Magnetic Sensors by Vlad Marsic, Soroush Faramehr, Isha Maini, David A. J. Moran, Petar Igic

Subjects: “…GaN transistor…”
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Hybrid probe combining MicroLED and neural electrode for precise neural modulation and multi-site recording by Gota Shinohara, Tasuku Kayama, Ayumu Okui, Wataru Oda, Atsushi Nishikawa, Alexander Loesing, Nahoko Kuga, Takuya Sasaki, Hiroto Sekiguchi

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On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector by Tong Xu, Shulin Sha, Kai Tang, Xuefeng Fan, Jinguo Liu, Caixia Kan, Gangyi Zhu, Feifei Qin, Daning Shi, Mingming Jiang

Subjects: “…GaN-on-Si…”
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Chemically Engineered GaN Thin Films for Light‐Stimulated Artificial Synapses by Xiaoqin Yang, Jiawen Lu, Luyu Zhao, Xiaorui Han, Zhongwei Bai, Peiwen Quan, Liangshuai Xie, Liang Li, Haoxuan Sun, Mark Hermann Rummeli, Bingcheng Luo, Hong Gu

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Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs by An-Chen Liu, Hsin-Chu Chen, Po-Tsung Tu, Yan-Lin Chen, Yan-Chieh Chen, Po-Chun Yeh, Chih-I Wu, Shu-Tong Chang, Tsung-Sheng Kao, Hao-Chung Kuo

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