Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si by Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel, Ross Anthony, Manu Hedge, Sophie E. Bierer, Sunzhuoran Wang, Andrew P. Knights, Ryan B. Lewis

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A review of GaN RF devices and power amplifiers for 5G communication applications by Hao Lu, Meng Zhang, Ling Yang, Bin Hou, Rafael Perez Martinez, Minhan Mi, Jiale Du, Longge Deng, Mei Wu, Srabanti Chowdhury, Xiaohua Ma, Yue Hao

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On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector by Tong Xu, Shulin Sha, Kai Tang, Xuefeng Fan, Jinguo Liu, Caixia Kan, Gangyi Zhu, Feifei Qin, Daning Shi, Mingming Jiang

Subjects: “…GaN-on-Si…”
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Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm² by Jialun Li, Renqiang Zhu, Ka Ming Wong, Kei May Lau

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Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates by Pieter Cardinael, Sachin Yadav, Bertrand Parvais, Jean-Pierre Raskin

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Epitaxial growth of transition metal nitrides by reactive sputtering by Florian Hörich, Christopher Lüttich, Jona Grümbel, Jürgen Bläsing, Martin Feneberg, Armin Dadgar, Rüdiger Goldhahn, André Strittmatter

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