Optimization of radiochemical purity assessment for [68Ga]Ga-EDOTREOTIDE (Somakit-TOC®): a shortened r-TLC method for improved PET radiopharmaceutical workflow by Arnaud Deschavannes, Kazuma Terashi, Marie Piquemal, Catherine Rioufol, Anthony Clotagatide

Subjects: “…[68Ge]Ge/[68Ga]Ga generator…”
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Adsorption Characteristics of an AlGaN/GaN Heterojunction on Potassium Ions by Yan Dong, Mengmeng Li, Yanli Liu, Jianming Lei, Haineng Bai, Yanmei Sun, Dunjun Chen, Dongjie Zhu, Rigao Wang, Yi Sun

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Electrothermal Failure Physics of GaN Schottky Diodes Under High-Temperature Forward Biasing by Nahid Sultan Al-Mamun, Yuxin Du, Jianan Song, Rongming Chu, Aman Haque

Subjects: “…GaN Schottky diode…”
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TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs by Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani

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Novel Bidirectional ESD Circuit for GaN HEMT by Pengfei Zhang, Cheng Yang, Jingyu Shen, Xiaorong Luo, Gaoqiang Deng, Shuxiang Sun, Yuxi Wei, Jie Wei

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Improving GaP Solar Cell Performance by Passivating the Surface Using AlxGa1-xP Epi-Layer by Xuesong Lu, Ruiying Hao, Martin Diaz, Robert L. Opila, Allen Barnett

Subjects: “…AlGaP…”
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Characterization and functionalization of ternary InGaN nanosurface towards energy storage system in solar cell basics: a molecular modelling study by F. Mollaamin

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Reduced splenic uptake of [68Ga]Ga-Pentixafor following first-line chemotherapy is associated with poor prognosis in patients with newly diagnosed multiple myeloma by Qingqing Pan, Zhenying Chen, Silu Liu, Hongzhe Zhang, Jie Feng, Weibing Miao, Fang Li, Xinxin Cao, Yaping Luo

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Magnetic, Electrical and Surface Morphological Characterization of AuGe/Ni/Au Ohmic Contact Metallization on GaAs/AlGaAs Multilayer Structures by T.S. Abhilash, Ch. Ravi Kumar, G. Rajaram

Subjects: “…GaAs/AlGaAs…”
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[68Ga]Ga-FAPI-46 PET/CT for Staging Suspected/Confirmed Lung Cancer: Results on the Surgical Cohort Within a Monocentric Prospective Trial by Lucia Zanoni, Emilia Fortunati, Giulia Cuzzani, Claudio Malizia, Filippo Lodi, Veronica Serena Cabitza, Irene Brusa, Stefano Emiliani, Marta Assenza, Filippo Antonacci, Francesca Giunchi, Alessio Degiovanni, Marco Ferrari, Filippo Natali, Thomas Galasso, Gian Piero Bandelli, Simona Civollani, Piero Candoli, Antonietta D’Errico, Piergiorgio Solli, Stefano Fanti, Cristina Nanni

Subjects: “…[68Ga]Ga-FAPI…”
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Effect of Temperature on the AlGaAs/GaAs Tandem Solar Cell for Concentrator Photovoltaic Performances by Hemmani Abderrahmane, B. Dennai, H. Khachab, A. Helmaoui

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Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT by Palash Das, Dhrubes Biswas

Subjects: “…AlGaN / GaN…”
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Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy by M.A. Bazalevsky, G.I. Koltsov, S.I. Didenko, S.Yu. Yurchuk, S.A. Legotin, O.I. Rabinovich, V.N. Murashev, I.P. Kazakov

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Physical Model Development for Fabricating MIS‐Anode‐Based 1100 V AlGaN/GaN‐Based Lateral Schottky Barrier Diodes Grown on Silicon Substrate with Low Leakage Current by Jingting He, Zhizhong Wang, Fuping Huang, Chunshuang Chu, Kangkai Tian, Shuting Cai, Yonghui Zhang, Xiaojuan Sun, Dabing Li, Xiaowei Sun, Zi‐Hui Zhang

Subjects: “…AlGaN/GaN SBDs…”
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High Figure-of-Merit (<inline-formula> <tex-math notation="LaTeX">${V}_{\text{BR}}^{\text{2}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${R}_{\text{... by Jun-Hyeok Lee, Jeong-Min Ju, Gokhan Atmaca, Jeong-Gil Kim, Seung-Hyeon Kang, Yong Soo Lee, Sang-Heung Lee, Jong-Won Lim, Ho-Sang Kwon, Sefer Bora Lisesivdin, Jung-Hee Lee

Subjects: “…AlGaN/GaN…”
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Study on Optical Properties of Indium-Graded Semipolar InGaN/GaN Quantum Well by Fanming Zeng, Lihong Zhu, Wei Liu, Weicui Liu, Hongwei Wang, Baolin Liu

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Next generation of ICeGaNⓇ for superior no load and light load performance by Kalparupa Mukherjee, Jin Zhang, Kaspars Ledins, Carlos Toyos Bada, Nirmana Perera, Loizos Efthymiou, Sheung Wai Fung, Martin Arnold, Giorgia Longobardi, Florin Udrea

Subjects: “…GaN…”
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Visible Luminescence of the InGaN/GaN Ultraviolet Light-emitting Diodes 365 nm by V.P. Veleschuk, A.I. Vlasenko, Z.K. Vlasenko, D.N. Khmil’, O.M. Kamuz, I.V. Petrenko, V.P. Tartachnyk, A.V. Shulga, V.V. Borshch

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Study on phase characteristics of heterostructure por-Ga2O3/GaAs by S. S. Kovachov, I. T. Bohdanov, D. S. Drozhcha, K. M. Tikhovod, V. V. Bondarenko, I. G. Kosogov, Ya. O. Suchikova

Subjects: “…Ga2O3…”
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Effect of Thermal Oxidation on the Structure, Surface Texturing, and Microstructure Evolution in Nanocrystalline Ga─O─N Films by Debabrata Das, Francelia Sanchez, Paul Gaurav Nalam, Nolan Herbort, Felicia S. Manciu, V. Shutthanandan, C.V. Ramana

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