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    Ferroelectric memory: state-of-the-art manufacturing and research by D. A. Abdullaev, R. A. Milovanov, R. L. Volkov, N. I. Borgardt, A. N. Lantsev, K. A. Vorotilov, A. S. Sigov

    Published 2020-10-01
    “…Ferroelectric capacitors and memory cells made by main commercial FRAM manufactures (Texas Instruments, Cypress Semiconductor, Fujitsu и Lapis Semiconductor) are explored. All memory cells are based on the lead zirconate titanate PZT capacitor with the thickness of about 70 nm and IrOx/Ir or Pt electrodes. …”
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