Impact of Biasing Effects on Turn-On Switching Transients of GaN Power eHEMTs: Repeatability and Consistency by Mohammad Hedayati, Harry C. P. Dymond, Saeed Jahdi, Bernard Stark

Subjects: “…V<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{\text{TH}}$</tex-math> </inline-formula>drift…”
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Optimizing Pulse Conditions for Enhanced Memory Performance of Se-Based Selector-Only Memory by Jangseop Lee, Taras Ravsher, Daniele Garbin, Sergiu Clima, Robin Degraeve, Attilio Belmonte, Hyunsang Hwang, Inhee Lee

“…Our experimental results demonstrate that increasing the <inline-formula> <tex-math notation="LaTeX">$\mathrm { T_{fall}}$ </tex-math></inline-formula> leads to an increased threshold voltage (Vth) and reduced <inline-formula> <tex-math notation="LaTeX">$\mathrm { V_{th}}$ </tex-math></inline-formula> drift in SiGeAsSe devices. The optimized devices exhibit a remarkable memory window (&#x003E; 1 V) and significantly suppressed drift characteristics (~10 mV/dec.). …”
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