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Extraction of individual Pockels coefficients of thin films via interferometric reflection measurements
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Dielectric Temperature Stability and Enhanced Energy-Storage Performance of Sr<sub>0.4</sub>Ba<sub>0.6</sub>(Zr<sub>0.2</sub>Ti<sub>0.2</sub>Sn<sub>0.2</sub>Ta<sub>0.2</sub>Nb<sub>0.2</sub>)<sub>2</sub>O<sub>6</sub> High-Entropy Ferroelectric Ceramics
Published 2024-12-01“…In this research, we employed a high-entropy approach in tungsten-bronze-structured ferroelectric ceramics, preparing Sr<sub>0.4</sub>Ba<sub>0.6</sub>(Zr<sub>0.2</sub>Ti<sub>0.2</sub>Sn<sub>0.2</sub>Ta<sub>0.2</sub>Nb<sub>0.2</sub>)<sub>2</sub> (denoted as SBN40-H) ceramics through the traditional solid-state reaction technique. …”
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A High-Efficiency Charge-Domain Compute-in-Memory 1F1C Macro Using 2-bit FeFET Cells for DNN Processing
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65
Charge Order Breaks Magnetic Symmetry in Molecular Quantum Spin Chains
Published 2012-01-01“…We present electron-spin-resonance experiments on quasi-one-dimensional (TMTTF)2X salts (X= PF6, AsF6, and SbF6), which reveal that the magnetic properties are modified below TCO when electronic ferroelectricity sets in. The coupling of anions and organic molecules rotates the g-tensor out of the molecular plane creating magnetically nonequivalent sites on neighboring chains at domain walls. …”
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Multiferroic and Optical Properties of La0.05Li0.85NbO3 and LiNbO3 Nanocrystals
Published 2018-01-01“…Because of this, the resurgence of nanomaterials with multiferroic and optical properties is presented in this work of one single phase in lanthanum lithium niobate (La0.05Li0.85NbO3) and lithium niobate (LiNbO3) with ferromagnetic, ferroelectric, relaxor ferroelectricity, second harmonic generation, high-temperature ferromagnetic, and magnetoelectric properties.…”
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67
Vibrational Spectral Studies of Pure and Doped TGSP Crystals
Published 2013-01-01“…Triglycine sulfate crystals (TGS) are an important class of ferroelectric materials. TGS have attracted many researches because of thier room temperature ferroelectric nature. …”
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Interface effects in the phase determination of Hf0.5Zr0.5O2 epitaxial thin films
Published 2025-01-01“…HfO2-based ferroelectrics show tremendous potential for applications in computing technologies, but questions remain as to what dictates the stabilization of the desired phase. …”
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Probing and manipulating the Mexican hat-shaped valence band of In2Se3
Published 2025-01-01“…Abstract Ferroelectrics based on van der Waals semiconductors represent an emergent class of materials for disruptive technologies ranging from neuromorphic computing to low-power electronics. …”
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Dielectric Spectroscopy Analyses of SrBi4Ti4O15 Films Obtained from Soft Chemical Solution
Published 2009-01-01“…The capacitance-voltage (C-V) characteristics of perovskite thin film showed normal ferroelectric behavior. The remanent polarization and coercive fields were 5.4 μC/cm2 and 85 kV/cm, respectively. …”
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Passivation of substrates with hydrogen to reduce the number of electron traps in the buffer layer at the contact of silicon with Ba1-xSrxTiO3
Published 2024-12-01“…The performance of FeRAM non-volatile cells including those on ferroelectric insulating layers requires full-scale development of the field effect at the semiconductor–dielectric interface. …”
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Modulated photovoltaic response in a flexoelectric device using microscopic indentation
Published 2025-01-01“…The use of ferroelectric materials in photovoltaics has garnered significant attention due to the presence of a giant open circuit voltage response. …”
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73
SEM and AFM Studies of Two-Phase Magnetic Alkali Borosilicate Glasses
Published 2017-01-01“…The first results for nanocomposite materials on the basis of magnetic glasses containing the embedded ferroelectrics KH2PO4 demonstrate the effect of applied magnetic field on the ferroelectric phase transition.…”
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Impact of sintering temperature on the structural, morphological, and dielectric properties of (1-x)LaFeO3–xBaTiO3 (x = 0.49)
Published 2025-01-01“…The samples demonstrated a diffuse ferroelectric behavior, with this effect becoming less prominent at higher sintering temperatures. …”
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A Comparative Analysis of Asymmetric (BaTiO3) 1−xΛ/(BaZrO3)xΛ Superlattices via X-Ray Diffraction and Raman Spectroscopy
Published 2020-01-01“…The thicknesses of BT (ferroelectric) and BZ (paraelectric) layers were varied so that х ranged from 0 to 1 at a modulation period Λ of about 80 Å. …”
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Refreshable memristor via dynamic allocation of ferro-ionic phase for neural reuse
Published 2025-01-01“…Our results are promising towards building refreshable hardware platforms based on ferroelectric-ionic combination capable of accommodating more efficient algorithms and architectures.…”
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Design of antiferroelectric polarization configuration for ultrahigh capacitive energy storage via increasing entropy
Published 2025-01-01“…Abstract Electric field induced antiferroelectric-ferroelectric phase transition is a double-edged sword for energy storage properties, which not only offers a congenital superiority with substantial energy storage density but also poses significant challenges such as large polarization hysteresis and poor efficiency, deteriorating the operation and service life of capacitors. …”
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Measuring. Monitoring. Management. Control
Published 2024-12-01“…The object of research is a ferroelectric film of barium titanate, for which the authors proposed a method of microarc oxidation, previously widely used for the development of the surface of products made of metals and alloys of the light group. …”
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Effect of Polarization Fatigue on Harvesting Energy Using Pyroelectric Materials
Published 2014-01-01“…The phenomenon of polarization fatigue in ferroelectric materials is defined and the effect of this phenomenon on harvested energy using these materials has been studied. …”
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A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission
Published 2024-12-01“…By combining theoretical analysis with device simulations, the impacts of the ferroelectric material anisotropy, ferroelectric layer thickness, and active region doping concentration on the device performance were systematically optimized. …”
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