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1
Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors
Published 2001-01-01Subjects: Get full text
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2
An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices
Published 2001-01-01Subjects: Get full text
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3
Intrinsic field-effect mobility in thin-film transistor with polycrystalline In2O3 channel based on transfer length method
Published 2025-01-01Subjects: Get full text
Article