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    A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

    A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET by Huu Thai Bui, Chun-Hsing Shih, Dang Chien Nguyen

    Published 2024-09-01
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