Showing 1 - 14 results of 14 for search '"DRAM"', query time: 0.04s Refine Results
  1. 1
  2. 2

    Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs by Yunjiao Bao, Gangping Yan, Lei Cao, Chuqiao Niu, Qingkun Li, Guanqiao Sang, Lianlian Li, Yanzhao Wei, Xuexiang Zhang, Jie Luo, Yanyu Yang, Gaobo Xu, Huaxiang Yin

    Published 2024-01-01
    “…This breakthrough has the potential to increase the retention time of DRAM applications by nearly 100 times. Moreover, the pronounced novel structure has mitigated parasitic capacitance, thereby leading to a notable 47.7% reduction in write latency within dynamic-random-access-memory (DRAM) circuits. …”
    Get full text
    Article
  3. 3
  4. 4
  5. 5
  6. 6

    A Hierarchical Cache Architecture-Oriented Cache Management Scheme for Information-Centric Networking by Yichao Chao, Rui Han

    Published 2025-01-01
    “…Information-Centric Networking (ICN) typically utilizes DRAM (Dynamic Random Access Memory) to build in-network cache components due to its high data transfer rate and low latency. …”
    Get full text
    Article
  7. 7

    Performance Evaluation of Page Migration Scheme for NVRAM-Based Wireless Sensor Nodes by Yeonseung Ryu

    Published 2013-11-01
    “…Some recent studies have shown that DRAM-based main memory spends a significant portion of the total system power. …”
    Get full text
    Article
  8. 8

    Don’t Cache, Speculate!: Speculative Address Translation for Flash-Based Storage Systems by Hyungjin Kim, Seongwook Kim, Junhyeok Park, Gwangeun Byeon, Seokin Hong

    Published 2025-01-01
    “…The performance overhead of the address translation is more severe in low-cost flash-based storage systems (e.g., DRAM-less SSD) because they do not employ the DRAM for caching the mapping table, and thus, every I/O request involves an additional read request to the flash to load an address mapping information. …”
    Get full text
    Article
  9. 9

    A novel framework for uncertainty quantification of rainfall–runoff models based on a Bayesian approach focused on transboundary river basins by Thi-Duyen Nguyen, Duc Hai Nguyen, Hyun-Han Kwon, Deg-Hyo Bae

    Published 2025-02-01
    “…Effects of LFs in blending with the DRAM algorithm were confirmed by uncertainty measures and the behavior of the upper and lower uncertainty bounds. …”
    Get full text
    Article
  10. 10

    Algorithm and Architecture Optimization for 2D Discrete Fourier Transforms with Simultaneous Edge Artifact Removal by Faisal Mahmood, Märt Toots, Lars-Göran Öfverstedt, Ulf Skoglund

    Published 2018-01-01
    “…We demonstrate that our proposed optimizations can lead to 2.8× reduced FPGA and DRAM energy consumption when calculating high-throughput 4096×4096 2D FFTs with simultaneous edge artifact removal. …”
    Get full text
    Article
  11. 11

    DaLAMED: A Clock-Frequency and Data-Lifetime-Aware Methodology for Energy-Efficient Memory Design in Edge Devices by Belal Jahannia, Abdolah Amirany, Elham Heidari, Hamed Dalir

    Published 2025-01-01
    “…Through a thorough analysis using the MiBench benchmark suite, we determined that unified eNVM architectures, when optimized with DaLAMED, can reduce energy consumption by 30-60% compared to hybrid memory designs featuring DRAM at frequencies below 30 MHz, and offer comparable benefits over hybrid memory structures containing SRAM at frequencies up to 125 MHz. …”
    Get full text
    Article
  12. 12

    Proceso organizativo de las comunidades negras rurales de Antioquia. Ancestralidad, etnicidad y política pública afroantioqueña by César Alejandro Cardona

    Published 2017-01-01
    “…A partir de una revisiÛn documental complementada con trabajo de campo en algunas comunidades negras, se retoma el trabajo de Marta DomÌnguez (2015) para reflexionar de manera crÌtica sobre la ancestralidad o etnicidad, y se propone que para las comunidades negras rurales de Antioquia, m·s all· de la construcciÛn de estas nociones, es fundamental la posibilidad de acceder a la autodeterminaciÛn en los territorios ancestrales y ser tenidos en cuenta para la toma de decisiones que afectan dram·ticamente sus espacios de vida.…”
    Get full text
    Article
  13. 13

    Ferroelectric memory: state-of-the-art manufacturing and research by D. A. Abdullaev, R. A. Milovanov, R. L. Volkov, N. I. Borgardt, A. N. Lantsev, K. A. Vorotilov, A. S. Sigov

    Published 2020-10-01
    “…Semiconductor industry calls for emerging memory, demonstrating high speed (like SRAM or DRAM), nonvolatility (like Flash NAND), high endurance and density, good scalability, reduced energy consumption and reasonable cost. …”
    Get full text
    Article
  14. 14

    Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach by Sungjoo Song, Jong-Hyun Kim, Jongyoun Park, Seung-Hwan Kim, Dongjin Ko, Hyejung Choi, Seiyon Kim, Hyun-Yong Yu

    Published 2025-01-01
    “…Recently, amorphous indium gallium zinc oxide (a-IGZO) has gained prominence for its application to stackable 3-dimensional (3D) dynamic random-access memory (DRAM) due to its ultra-low off-current and low-temperature fabrication. …”
    Get full text
    Article