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1
Model-Based Variation-Aware Optimization for Offset Calibration and Pre-Sensing in DRAM Sense Amplifiers
Published 2025-01-01Subjects: “…DRAM…”
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2
Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs
Published 2024-01-01“…This breakthrough has the potential to increase the retention time of DRAM applications by nearly 100 times. Moreover, the pronounced novel structure has mitigated parasitic capacitance, thereby leading to a notable 47.7% reduction in write latency within dynamic-random-access-memory (DRAM) circuits. …”
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3
DRAM1 enhances the proliferation and metastasis of gastric cancer through the PI3K/AKT/mTOR signaling pathway and energy metabolism
Published 2025-01-01Subjects: Get full text
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4
Physics-Based Compact Model of Independent Dual-Gate BEOL-Transistors for Reliable Capacitorless Memory
Published 2024-01-01Subjects: Get full text
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5
High-Bandwidth and Energy-Efficient Memory Interfaces for the Data-Centric Era: Recent Advances, Design Challenges, and Future Prospects
Published 2024-01-01Subjects: “…dynamic random access memory (DRAM)…”
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6
A Hierarchical Cache Architecture-Oriented Cache Management Scheme for Information-Centric Networking
Published 2025-01-01“…Information-Centric Networking (ICN) typically utilizes DRAM (Dynamic Random Access Memory) to build in-network cache components due to its high data transfer rate and low latency. …”
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7
Performance Evaluation of Page Migration Scheme for NVRAM-Based Wireless Sensor Nodes
Published 2013-11-01“…Some recent studies have shown that DRAM-based main memory spends a significant portion of the total system power. …”
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8
Don’t Cache, Speculate!: Speculative Address Translation for Flash-Based Storage Systems
Published 2025-01-01“…The performance overhead of the address translation is more severe in low-cost flash-based storage systems (e.g., DRAM-less SSD) because they do not employ the DRAM for caching the mapping table, and thus, every I/O request involves an additional read request to the flash to load an address mapping information. …”
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9
A novel framework for uncertainty quantification of rainfall–runoff models based on a Bayesian approach focused on transboundary river basins
Published 2025-02-01“…Effects of LFs in blending with the DRAM algorithm were confirmed by uncertainty measures and the behavior of the upper and lower uncertainty bounds. …”
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10
Algorithm and Architecture Optimization for 2D Discrete Fourier Transforms with Simultaneous Edge Artifact Removal
Published 2018-01-01“…We demonstrate that our proposed optimizations can lead to 2.8× reduced FPGA and DRAM energy consumption when calculating high-throughput 4096×4096 2D FFTs with simultaneous edge artifact removal. …”
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11
DaLAMED: A Clock-Frequency and Data-Lifetime-Aware Methodology for Energy-Efficient Memory Design in Edge Devices
Published 2025-01-01“…Through a thorough analysis using the MiBench benchmark suite, we determined that unified eNVM architectures, when optimized with DaLAMED, can reduce energy consumption by 30-60% compared to hybrid memory designs featuring DRAM at frequencies below 30 MHz, and offer comparable benefits over hybrid memory structures containing SRAM at frequencies up to 125 MHz. …”
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12
Proceso organizativo de las comunidades negras rurales de Antioquia. Ancestralidad, etnicidad y política pública afroantioqueña
Published 2017-01-01“…A partir de una revisiÛn documental complementada con trabajo de campo en algunas comunidades negras, se retoma el trabajo de Marta DomÌnguez (2015) para reflexionar de manera crÌtica sobre la ancestralidad o etnicidad, y se propone que para las comunidades negras rurales de Antioquia, m·s all· de la construcciÛn de estas nociones, es fundamental la posibilidad de acceder a la autodeterminaciÛn en los territorios ancestrales y ser tenidos en cuenta para la toma de decisiones que afectan dram·ticamente sus espacios de vida.…”
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13
Ferroelectric memory: state-of-the-art manufacturing and research
Published 2020-10-01“…Semiconductor industry calls for emerging memory, demonstrating high speed (like SRAM or DRAM), nonvolatility (like Flash NAND), high endurance and density, good scalability, reduced energy consumption and reasonable cost. …”
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14
Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach
Published 2025-01-01“…Recently, amorphous indium gallium zinc oxide (a-IGZO) has gained prominence for its application to stackable 3-dimensional (3D) dynamic random-access memory (DRAM) due to its ultra-low off-current and low-temperature fabrication. …”
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