Energy-efficient strategy for work node by DRAM voltage regulation in storm by Yonglin PU, Jiong YU, Liang LU, Chen BIAN, Bin LIAO, Ziyang LI

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Model-Based Variation-Aware Optimization for Offset Calibration and Pre-Sensing in DRAM Sense Amplifiers by Dongyeong Kim, Geon Kim, Suyeon Kim, Jewon Park, Sinwook Kim, Hyeona Seo, Chaehyuk Lim, Sowon Kim, Juwon Lee, Jeonghyeon Yun, Hyerin Lee, Jinseok Park, Yongbok Lee, Seungchan Lee, Myoungjin Lee

Subjects: “…DRAM…”
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ZAMAN-MEKAN DÜALİZMİNİN YAPI ÇÖZÜMÜ Ütopla ve Heterotopyaya Karşı Dram ve Rüyanın Yeniden İnşası by Yasın Aktay

Subjects: “…yapıçözümü; zaman-mekan düalizmi; dram; rüya…”
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Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs by Yunjiao Bao, Gangping Yan, Lei Cao, Chuqiao Niu, Qingkun Li, Guanqiao Sang, Lianlian Li, Yanzhao Wei, Xuexiang Zhang, Jie Luo, Yanyu Yang, Gaobo Xu, Huaxiang Yin

“…This breakthrough has the potential to increase the retention time of DRAM applications by nearly 100 times. Moreover, the pronounced novel structure has mitigated parasitic capacitance, thereby leading to a notable 47.7% reduction in write latency within dynamic-random-access-memory (DRAM) circuits. …”
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ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM by Jeong-Min Park, Sein Lee, Junseo Lee, Jang-Yeon Kwon

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DRAM1 enhances the proliferation and metastasis of gastric cancer through the PI3K/AKT/mTOR signaling pathway and energy metabolism by Xinrong Wu, Yifan Li, Weiwei Wang, Jiale Xu, Bei Zhao, Wenqi Sun, Dan Ge, Longying Xiong, Xiaotan Dou, Xiaoping Zou, Lei Wang, Min Chen

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Study of Row Hammer attack by Wenwei WANG, Peishun LIU

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Physics-Based Compact Model of Independent Dual-Gate BEOL-Transistors for Reliable Capacitorless Memory by Lihua Xu, Kaifei Chen, Zhi Li, Yue Zhao, Lingfei Wang, Ling Li

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High-Bandwidth and Energy-Efficient Memory Interfaces for the Data-Centric Era: Recent Advances, Design Challenges, and Future Prospects by Joo-Hyung Chae

Subjects: “…dynamic random access memory (DRAM)…”
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A Hierarchical Cache Architecture-Oriented Cache Management Scheme for Information-Centric Networking by Yichao Chao, Rui Han

“…Information-Centric Networking (ICN) typically utilizes DRAM (Dynamic Random Access Memory) to build in-network cache components due to its high data transfer rate and low latency. …”
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Performance Evaluation of Page Migration Scheme for NVRAM-Based Wireless Sensor Nodes by Yeonseung Ryu

“…Some recent studies have shown that DRAM-based main memory spends a significant portion of the total system power. …”
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Don’t Cache, Speculate!: Speculative Address Translation for Flash-Based Storage Systems by Hyungjin Kim, Seongwook Kim, Junhyeok Park, Gwangeun Byeon, Seokin Hong

“…The performance overhead of the address translation is more severe in low-cost flash-based storage systems (e.g., DRAM-less SSD) because they do not employ the DRAM for caching the mapping table, and thus, every I/O request involves an additional read request to the flash to load an address mapping information. …”
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A novel framework for uncertainty quantification of rainfall–runoff models based on a Bayesian approach focused on transboundary river basins by Thi-Duyen Nguyen, Duc Hai Nguyen, Hyun-Han Kwon, Deg-Hyo Bae

“…Effects of LFs in blending with the DRAM algorithm were confirmed by uncertainty measures and the behavior of the upper and lower uncertainty bounds. …”
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Algorithm and Architecture Optimization for 2D Discrete Fourier Transforms with Simultaneous Edge Artifact Removal by Faisal Mahmood, Märt Toots, Lars-Göran Öfverstedt, Ulf Skoglund

“…We demonstrate that our proposed optimizations can lead to 2.8× reduced FPGA and DRAM energy consumption when calculating high-throughput 4096×4096 2D FFTs with simultaneous edge artifact removal. …”
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Realization of Looking up Virtual Router's FIB Based on Set Partition by Ying Hu, Lei Zhuang

“…It is aimed at the looking up technology on virtual router's forwarding table, which using the way of set partition to cut apart the prefixes set into two sets that realized using SRAM and DRAM respectively. Various solutions were analyzed, and new method that to use mark bit solving the problem of inefficient looking up overlapping prefixes in SRAM, was proposed. …”
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JEAN-PAUL SARTRE’IN VAROLUŞÇU DÜŞÜNCESİNİN İZLERİNİ MODERN SİNEMADA ARAMAK: ÇÖLDE ÇAY FİLMİ by İkbal Bozkurt Avcı

“…Çalışmada Bernardo Bertolucci’nin “Çölde Çay” filmi felsefi eleştiri yöntemiyle çözümlenmiş; filmde yer verilen varoluşçu temalar ile insan için yaşamın nasıl bir dram olduğu ortaya konulmaya çalışılmıştır.…”
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DaLAMED: A Clock-Frequency and Data-Lifetime-Aware Methodology for Energy-Efficient Memory Design in Edge Devices by Belal Jahannia, Abdolah Amirany, Elham Heidari, Hamed Dalir

“…Through a thorough analysis using the MiBench benchmark suite, we determined that unified eNVM architectures, when optimized with DaLAMED, can reduce energy consumption by 30-60% compared to hybrid memory designs featuring DRAM at frequencies below 30 MHz, and offer comparable benefits over hybrid memory structures containing SRAM at frequencies up to 125 MHz. …”
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Proceso organizativo de las comunidades negras rurales de Antioquia. Ancestralidad, etnicidad y política pública afroantioqueña by César Alejandro Cardona

“…A partir de una revisiÛn documental complementada con trabajo de campo en algunas comunidades negras, se retoma el trabajo de Marta DomÌnguez (2015) para reflexionar de manera crÌtica sobre la ancestralidad o etnicidad, y se propone que para las comunidades negras rurales de Antioquia, m·s all· de la construcciÛn de estas nociones, es fundamental la posibilidad de acceder a la autodeterminaciÛn en los territorios ancestrales y ser tenidos en cuenta para la toma de decisiones que afectan dram·ticamente sus espacios de vida.…”
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Ferroelectric memory: state-of-the-art manufacturing and research by D. A. Abdullaev, R. A. Milovanov, R. L. Volkov, N. I. Borgardt, A. N. Lantsev, K. A. Vorotilov, A. S. Sigov

“…Semiconductor industry calls for emerging memory, demonstrating high speed (like SRAM or DRAM), nonvolatility (like Flash NAND), high endurance and density, good scalability, reduced energy consumption and reasonable cost. …”
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Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach by Sungjoo Song, Jong-Hyun Kim, Jongyoun Park, Seung-Hwan Kim, Dongjin Ko, Hyejung Choi, Seiyon Kim, Hyun-Yong Yu

“…Recently, amorphous indium gallium zinc oxide (a-IGZO) has gained prominence for its application to stackable 3-dimensional (3D) dynamic random-access memory (DRAM) due to its ultra-low off-current and low-temperature fabrication. …”
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