Showing 41 - 60 results of 258 for search '"CMOS"', query time: 0.04s Refine Results
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    System-level modeling with temperature compensation for a CMOS-MEMS monolithic calorimetric flow sensing SoC by Linze Hong, Ke Xiao, Xiangyu Song, Liwei Lin, Wei Xu

    Published 2025-01-01
    “…Abstract We present a system-level model with an on-chip temperature compensation technique for a CMOS-MEMS monolithic calorimetric flow sensing SoC. …”
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    Article
  3. 43

    A Low Power CMOS UWB LNA with Sub-1V Supply Voltage and Noise Cancellation Technique by Mehdi Alinejad, Emad Ebrahimi

    Published 2024-08-01
    “…Then, the proposed amplifier has been implemented in TSMC 0.18µm RF-CMOS technology and simulated using Cadence-IC software. …”
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    Article
  4. 44

    Microwave Imaging Using CMOS Integrated Circuits with Rotating 4 × 4 Antenna Array on a Breast Phantom by Hang Song, Afreen Azhari, Xia Xiao, Eiji Suematsu, Hiromasa Watanabe, Takamaro Kikkawa

    Published 2017-01-01
    “…Gaussian monocycle pulses are generated by CMOS logic circuits and transmitted by a 4 × 4 matrix antenna array via two CMOS single-pole-eight-throw (SP8T) switching matrices. …”
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    Article
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    Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells via Source/Drain Doping Engineering by Xuexiang Zhang, Qingkun Li, Lei Cao, Qingzhu Zhang, Renjie Jiang, Peng Wang, Jiaxin Yao, Huaxiang Yin

    Published 2025-01-01
    “…These results indicate that the optimization to S/D doping engineering may achieve substantial performance gains in both the GAA CMOS transistors and the SRAM cells.…”
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    Article
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    A 12 GHz 30 mW 130 nm CMOS Rotary Travelling Wave Voltage Controlled Oscillator by G. Jacquemod, F. Ben Abdeljelil, L. Carpineto, W. Tatinian, M. Borgarino

    Published 2012-01-01
    “…This paper reports a 12 GHz rotary travelling wave (RTW) voltage controlled oscillator designed in a 130 nm CMOS technology. The phase noise and power consumption performances were compared with the literature and with telecommunication standards for broadcast satellite applications. …”
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    Article
  9. 49

    A 12 dB 0.7 V 𝟖𝟓𝟎𝝁W CMOS LNA for 866 MHz UHF RFID Reader by Jie Li, S. M. Rezaul Hasan

    Published 2010-01-01
    “…The design of a narrow-band cascode CMOS inductive source-degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented. …”
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  10. 50

    Realization of 10bit, 200MHz sampling frequency CMOS video D/A converter with gradient error compensation by HUANG Jiao-ying1, HE Yi-gang1 YANG Hui1, TANG Sheng-xue1, SHEN Fang1

    Published 2007-01-01
    “…A circuit of 10bit,200MHz sampling frequency current steering DAC with hierarchical symmetrical switching sequences was presented,which compensate the gradient error.The DAC employs segmented architecture.An integral linearity error caused by error distributes of current sources was reduced by a new switching sequence called "hierarchi-cal symmetrical switching".The DAC was built in a video-rate adaptive equalizer IC,which was fabricated in a 0.35μm,3.3V CMOS process.The area of DAC is 1.26mm×0.78mm.When operating at 14.318 MHz(4Fsc) sampling freguency,the effective numbers of bits is 9.3.Both the integral and the differential linearity errors are less than ± 0.5LSB.…”
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    An Approach to Increase Power-Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 µm CMOS Technology by Hemad Heidari Jobaneh

    Published 2023-01-01
    “…Advanced design system and TSMC 0.18 µm CMOS process are utilized to carry on the simulation.…”
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    The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology by Hemad Heidari Jobaneh

    Published 2020-01-01
    “…In addition, TSMC 0.13 μm CMOS process is used in ADS. The LNA is biased with two different voltage supplies in order to reduce power consumption. …”
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    A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS by Rui Ma, Florian Protze, Frank Ellinger

    Published 2022-10-01
    “…A proof‐of‐concept WuRX circuit occupying an area of 1200 μm by 900 μm has been fabricated in a GlobalFoundries 45‐nm RF‐SOI CMOS technology. Measurement results show that at a data rate of 64 bps, the entire WuRX consumes only 2.3 μW. …”
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    A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS by Benqing Guo, Haishi Wang, Huifen Wang, Lei Li, Wanting Zhou, Kianoosh Jalali

    Published 2022-10-01
    “…Abstract A CMOS baseband‐active‐feedback receiver frontend with passive voltage‐commutating mixers is proposed. …”
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