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System-level modeling with temperature compensation for a CMOS-MEMS monolithic calorimetric flow sensing SoC
Published 2025-01-01“…Abstract We present a system-level model with an on-chip temperature compensation technique for a CMOS-MEMS monolithic calorimetric flow sensing SoC. …”
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A Low Power CMOS UWB LNA with Sub-1V Supply Voltage and Noise Cancellation Technique
Published 2024-08-01“…Then, the proposed amplifier has been implemented in TSMC 0.18µm RF-CMOS technology and simulated using Cadence-IC software. …”
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Microwave Imaging Using CMOS Integrated Circuits with Rotating 4 × 4 Antenna Array on a Breast Phantom
Published 2017-01-01“…Gaussian monocycle pulses are generated by CMOS logic circuits and transmitted by a 4 × 4 matrix antenna array via two CMOS single-pole-eight-throw (SP8T) switching matrices. …”
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An Analysis of Temperature-Dependent Timing Jitter Factors in the Structural Design of Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Detectors
Published 2025-01-01Subjects: “…CMOS SPAD…”
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Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells via Source/Drain Doping Engineering
Published 2025-01-01“…These results indicate that the optimization to S/D doping engineering may achieve substantial performance gains in both the GAA CMOS transistors and the SRAM cells.…”
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A 12 GHz 30 mW 130 nm CMOS Rotary Travelling Wave Voltage Controlled Oscillator
Published 2012-01-01“…This paper reports a 12 GHz rotary travelling wave (RTW) voltage controlled oscillator designed in a 130 nm CMOS technology. The phase noise and power consumption performances were compared with the literature and with telecommunication standards for broadcast satellite applications. …”
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A 12 dB 0.7 V 𝟖𝟓𝟎𝝁W CMOS LNA for 866 MHz UHF RFID Reader
Published 2010-01-01“…The design of a narrow-band cascode CMOS inductive source-degenerated low noise amplifier (LNA) for 866 MHz UHF RFID reader is presented. …”
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Realization of 10bit, 200MHz sampling frequency CMOS video D/A converter with gradient error compensation
Published 2007-01-01“…A circuit of 10bit,200MHz sampling frequency current steering DAC with hierarchical symmetrical switching sequences was presented,which compensate the gradient error.The DAC employs segmented architecture.An integral linearity error caused by error distributes of current sources was reduced by a new switching sequence called "hierarchi-cal symmetrical switching".The DAC was built in a video-rate adaptive equalizer IC,which was fabricated in a 0.35μm,3.3V CMOS process.The area of DAC is 1.26mm×0.78mm.When operating at 14.318 MHz(4Fsc) sampling freguency,the effective numbers of bits is 9.3.Both the integral and the differential linearity errors are less than ± 0.5LSB.…”
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A Low-Power and Low-Noise 4-12 GHz Buck CMOS Low-Noise Amplifier with Current-Reused Technique
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A 128 Gbps PAM‐4 feed forward equaliser with optimized 1UI pulse generator in 65 nm CMOS
Published 2023-05-01Get full text
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An Approach to Increase Power-Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 µm CMOS Technology
Published 2023-01-01“…Advanced design system and TSMC 0.18 µm CMOS process are utilized to carry on the simulation.…”
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An Ultra-Low-Power Static Contention-Free 25-Transistor True Single-Phase-Clocked Flip-Flop in 55 nm CMOS
Published 2024-01-01Subjects: “…CMOS digital circuits…”
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The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology
Published 2020-01-01“…In addition, TSMC 0.13 μm CMOS process is used in ADS. The LNA is biased with two different voltage supplies in order to reduce power consumption. …”
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Impact of Strain on Sub-3 nm Gate-All-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach
Published 2024-01-01Subjects: Get full text
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Single‐ended 2 ch. × 3.4 Gbit/s dual‐mode near‐ground transmitter IO driver in 45 nm CMOS process
Published 2017-03-01Subjects: Get full text
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A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS
Published 2022-10-01“…A proof‐of‐concept WuRX circuit occupying an area of 1200 μm by 900 μm has been fabricated in a GlobalFoundries 45‐nm RF‐SOI CMOS technology. Measurement results show that at a data rate of 64 bps, the entire WuRX consumes only 2.3 μW. …”
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A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS
Published 2022-10-01“…Abstract A CMOS baseband‐active‐feedback receiver frontend with passive voltage‐commutating mixers is proposed. …”
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