Showing 21 - 40 results of 258 for search '"CMOS"', query time: 0.05s Refine Results
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    Continuous-Time ΣΔ ADC with Implicit Variable Gain Amplifier for CMOS Image Sensor by Fang Tang, Amine Bermak, Amira Abbes, Mohieddine Amor Benammar

    Published 2014-01-01
    “…This paper presents a column-parallel continuous-time sigma delta (CTSD) ADC for mega-pixel resolution CMOS image sensor (CIS). The sigma delta modulator is implemented with a 2nd order resistor/capacitor-based loop filter. …”
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    2.4 GHz CMOS Power Amplifier with Mode-Locking Structure to Enhance Gain by Changhyun Lee, Changkun Park

    Published 2014-01-01
    “…To prove the feasibility of the proposed structure, we designed a 2.4 GHz CMOS power amplifier with a 0.18 μm RFCMOS process for polar transmitter applications. …”
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    MESO-CMOS Hybrid Circuits With Time-Multiplexing Technique for Energy and Area-Efficient Computing in Memory by Tzuping Huang, Linran Zhao, Yiming Han, Hai Li, Ian A. Young, Yaoyao Jia

    Published 2025-01-01
    Subjects: “…Beyond-complementary metal–oxide–semiconductor (CMOS) logic…”
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    Designing a Ring-VCO for RFID Transponders in 0.18 μm CMOS Process by Jubayer Jalil, Mamun Bin Ibne Reaz, Mohammad Arif Sobhan Bhuiyan, Labonnah Farzana Rahman, Tae Gyu Chang

    Published 2014-01-01
    “…For ease of integration and implementation of the module in tiny die area, a novel pseudodifferential delay cell based 3-stage ring oscillator has been introduced to fabricate the ring-VCO. In CMOS technology, 0.18 μm process is adopted for designing the circuit with 1.5 V power supply. …”
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    Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation by Gim Heng Tan, Roslina Mohd Sidek, Harikrishnan Ramiah, Wei Keat Chong, De Xing Lioe

    Published 2014-01-01
    “…This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. …”
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    A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS Technology by Jun-Da Chen

    Published 2013-01-01
    “…This paper presents an ultrawideband low-noise amplifier chip using TSMC 0.18 μm CMOS technology. We propose a UWB low noise amplifier (LNA) for low-voltage and low-power application. …”
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